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2SK3078

型号:

2SK3078

描述:

900 MHz频段放大器应用( GSM )[ 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

3 页

PDF大小:

173 K

2SK3078  
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE  
2SK3078  
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)  
Unit: mm  
Output Power  
Gain  
Drain Efficiency  
: P = 27.0 dBmW (Min.)  
O
: G = 12.5 dB (Min.)  
P
: η = 46% (Typ.)  
D
MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
RATING  
UNIT  
V
V
10  
5
V
V
DSS  
Gate-Source Voltage  
Drain Current  
GSS  
I
0.5  
A
D
Power Dissipation  
P
T
3.0  
W
°C  
°C  
D*  
ch  
stg  
Channel Temperature  
Storage Temperature Range  
150  
T
45~150  
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB  
JEDEC  
EIAJ  
TOSHIBA  
MARKING  
SC62  
25K1D  
000707EAA1  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
The information contained herein is subject to change without notice.  
2001-02-02 1/3  
2SK3078  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Output Power  
SYMBOL  
TEST CONDITION  
= 4.8 V  
DS  
MIN  
TYP.  
MAX  
UNIT  
P
V
27.0  
dBmW  
%
O
Iidle = 108 mA (V  
= adjust)  
GS  
Drain Efficiency  
η
D
46.0  
f = 915 MHz, P = 14.5 dBmW  
i
Z
= Z = 50 Ω  
L
G
Power Gain  
G
P
12.5  
0.20  
dB  
Threshold Voltage  
Drain Cut-off Current  
Gate-Source Leakage Current  
V
V
V
V
= 4.8 V, I = 0.5 mA  
1.20  
10  
5
V
th  
DS  
DS  
GS  
D
I
I
= 10 V, V  
= 0 V  
GS  
µA  
DSS  
GSS  
= 5 V, V = 0 V  
µA  
DS  
CAUTION  
This transistor is the electrostatic sensitive device.  
Please handle with caution.  
RF OUTPUT POWER TEST FIXTURE  
2001-02-02 2/3  
2SK3078  
CAUTION  
These are only typical curves and devices are not necessarily guaranteed at these curves.  
2001-02-02 3/3  
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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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