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2SK3095LS

型号:

2SK3095LS

描述:

N沟道MOSFET硅通用开关设备[ N-Channel Silicon MOSFET General-Purpose Switching Device ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

3 页

PDF大小:

32 K

Ordering number : EN8624  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3095LS  
Features  
Low ON-resistance.  
Low Qg.  
Ultrahigh-Speed Switching Applications.  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
400  
±30  
5
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
20  
A
DP  
2.0  
25  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Enargy (Single Pulse) *1  
Avalanche Current *2  
E
71.4  
5
AS  
I
AV  
*1 V =50V, L=5mH, I =5A  
DD  
AV  
*2 L5mH, single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=1mA, V =0V  
Unit  
min  
400  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
mA  
nA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=320V, V =0V  
GS  
1.0  
±100  
4.0  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±30V, V =0V  
DS  
V (off)  
GS  
=10V, I =1mA  
3.0  
1.4  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Marking : K3095  
yfs  
(on)  
=10V, I =2.8A  
2.8  
S
D
R
I
=2.8A, V =15V  
D GS  
0.92  
1.2  
DS  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N0806QB SY IM TC-00000313 No.8624-1/3  
2SK3095LS  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
660  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
V
DS  
DS  
DS  
170  
80  
14  
15  
45  
25  
20  
0.9  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Total Gate Charge  
Diode Forward Voltage  
Qg  
V
=200V, V =10V, I =5A  
GS  
DS  
D
V
SD  
I =5A, V =0V  
S GS  
1.2  
Note : Be careful in handling the 2SK3095LS because it has no protection diode between gate and source.  
Package Dimensions  
unit : mm (typ)  
7509-002  
4.5  
10.0  
3.2  
2.8  
0.9  
1.2  
1.2  
0.7  
0.75  
1 : Gate  
1
2
3
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : TO-220FI(LS)  
Switching Time Test Circuit  
Avalanche Resistance Test Circuit  
V
=200V  
DD  
L
50Ω  
DUT  
I
=2.8A  
D
V
=15V  
GS  
R =71.4  
L
D
V
OUT  
15V  
0V  
V
50Ω  
PW=10µs  
D.C.0.5%  
DD  
G
R
2SK3095LS  
GS  
P. G  
S
50Ω  
No.8624-2/3  
2SK3095LS  
A S O  
P
-- Ta  
D
5
2.5  
2.0  
1.5  
1.0  
I
=20A  
3
2
DP  
<10µs  
10  
7
5
I =5A  
D
3
2
1.0  
7
5
3
2
Operation in this  
area is limited by R (on).  
DS  
0.1  
7
5
0.5  
0
3
2
Tc=25°C  
Single pulse  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
100  
Drain-to-Source Voltage, V  
-- V  
IT11681  
Ambient Temperature, Ta -- °C  
IT11682  
DS  
P
-- Tc  
E
-- Ta  
D
AS  
30  
25  
20  
15  
10  
120  
100  
80  
60  
40  
5
0
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Case Temperature, Tc -- °C  
IT11683  
Ambient Temperature, Ta -- °C  
Note on usage : Since the 2SK3095LS is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of November, 2006. Specifications and information herein are subject  
to change without notice.  
PS No.8624-3/3  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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