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2SK3373_06

型号：

2SK3373_06

描述：

硅N沟道MOS型开关稳压器和DC / DC转换器应用电机驱动应用[ Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

177 K

下载PDF手册
2SK3373  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)  
2SK3373  
Switching Regulator and DC/DC Converter Applications  
Unit: mm  
Motor Drive Applications  
•
•
•
•
Low drain-source ON-resistance: R  
= 2.9 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 1.7 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 500 V)  
DSS  
DS  
Enhancement model: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
500  
500  
±30  
2
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
Pulse (t = 1 ms)  
(Note 1)  
(Note 1)  
I
D
I
5
DP  
Drain current  
A
Pulse (t = 100 μs)  
JEDEC  
JEITA  
―
―
I
12  
20  
DP  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
TOSHIBA  
2-7J1B  
Single-pulse avalanche energy  
E
112  
mJ  
(Note 2)  
Weight: 0.36 g (typ.)  
Avalanche current  
I
2
2
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55 to150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 48.4 mH, R = 25 Ω, I  
V
DD  
= 2 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-06  
2SK3373  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±25 V, V  
= 0 V  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
μA  
V
GSS  
GS  
I = ±10 μA, V  
G
DS  
Drain-source breakdown voltage  
Drain cutoff current  
V
V
= 0 V  
(BR) GSS  
DS  
= 500 V, V  
I
V
= 0 V  
⎯
100  
⎯
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
500  
2.0  
⎯
⎯
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
⎯
4.0  
3.2  
⎯
V
th  
DS  
GS  
DS  
D
Drain-source ON-resistance  
R
= 10 V, I = 1 A  
2.9  
1.7  
380  
40  
Ω
S
DS (ON)  
D
⎪Y ⎪  
fs  
= 10 V, I = 1 A  
0.8  
⎯
Forward transfer admittance  
Input capacitance  
D
C
C
⎯
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
⎯
⎯
DS  
rss  
C
oss  
⎯
120  
⎯
Output capacitance  
Rise time  
10 V  
GS  
I = 1 A  
D
t
⎯
⎯
⎯
⎯
⎯
15  
25  
20  
80  
9
⎯
⎯
⎯
⎯
⎯
r
V
V
OUT  
0 V  
Turn-on time  
Switching time  
t
on  
R
= 200 Ω  
L
Fall time  
t
f
∼
−
V
200 V  
DD  
<
Turn-off time  
t
off  
Duty 1%, t = 10 μs  
=
w
Total gate charge  
(gate-source plus gate-drain)  
Q
g
∼
−
V
400 V, V  
= 10 V, I = 2 A  
GS D  
nC  
DD  
Q
Gate-source charge  
⎯
⎯
5
4
⎯
⎯
gs  
Q
gd  
Gate-drain (“Miller”) charge  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
5
A
DR  
I
I
t = 1 ms  
DRP  
DRP  
Pulse drain reverse current  
(Note 1)  
A
t = 100 μs  
⎯
12  
−1.5  
⎯
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 2 A, V  
= 2 A, V  
= 0 V  
⎯
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
1000  
3.5  
ns  
μC  
rr  
dI /dt = 100 A/μs  
DR  
Q
⎯
rr  
Marking  
K3373  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-06  
2SK3373  
I
– V  
I
– V  
DS  
D
DS  
D
2.0  
1.6  
1.2  
0.8  
0.4  
0
5
4
3
2
1
0
8
Common source  
Tc = 25°C  
pulse test  
Common source  
Tc = 25°C  
pulse test  
10  
8
6
7
10  
6.5  
5.5  
6
5
5.5  
5
4.5  
V
= 4 V  
4.5  
GS  
V
= 4 V  
GS  
0
2
4
6
8
10  
10  
10  
0
10  
20  
30  
40  
50  
20  
10  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
DS  
(V)  
DS  
I
− V  
GS  
D
V
− V  
GS  
DS  
5
4
3
2
1
0
10  
8
Common source  
= 20 V  
Common source  
Tc = 25°C  
pulse test  
V
DS  
pulse test  
I
= 2 A  
D
6
25  
100  
4
Tc = −55°C  
1
2
0.5  
0
0
2
4
6
8
0
4
8
12  
16  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
R
− I  
DS (ON)  
D
⎪Y ⎪ − I  
fs  
D
30  
10  
10  
Common source  
Tc = 25°C  
Common source  
= 20 V  
V
DS  
Pulse test  
5
3
pulse test  
25  
5
3
Tc = −55°C  
100  
V
= 10 V  
GS  
1
0.5  
1
0.3  
0.2  
0.5  
0.1  
0.1  
0.3 0.5  
1
3
5
0.3  
0.5  
1
3
5
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2006-11-06  
2SK3373  
R
− Tc  
I
− V  
DS  
DS (ON)  
DR  
10  
8
10  
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
GS  
pulse test  
pulse test  
3
1
1
6
I
= 2 A  
D
0.3  
0.1  
0.5  
4
10  
3
2
0.03  
0.01  
1
V
= 0, −1 V  
−0.8  
GS  
0
−80  
−40  
0
40  
80  
160  
0
−0.2  
−0.4  
−0.6  
−1.0  
−1.2  
Case temperature  
Tc (°C)  
Drain-source voltage  
V
DS  
(V)  
Capacitance – V  
V
− Tc  
th  
DS  
1000  
5
4
3
2
1
0
Common source  
= 10 V  
V
DS  
= 1 mA  
500  
300  
I
D
C
iss  
pulse test  
100  
50  
30  
C
oss  
10  
5
Common source  
= 0 V  
f = 1 MHz  
V
GS  
C
rss  
Tc = 25°C  
2
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
−80  
−40  
0
40  
80  
120  
160  
Drain-source voltage  
V
DS  
(V)  
Case temperature Tc (°C)  
Dynamic input/output characteristics  
P
− Tc  
D
500  
20  
2.0  
1.6  
1.2  
0.8  
0.4  
0
Common source  
= 2 A  
I
D
Tc = 25°C  
pulse test  
V
DS  
400  
300  
200  
100  
0
16  
12  
8
200  
100  
V
= 400 V  
DD  
V
GS  
4
0
20  
0
4
8
12  
16  
0
40  
80  
120  
160  
200  
Total gate charge  
Q
(nC)  
Case temperature  
Tc (°C)  
g
4
2006-11-06  
2SK3373  
r
th  
− t  
w
3
1
Duty = 0.5  
0.3  
0.1  
0.03  
0.01  
0.2  
0.1  
P
DM  
t
0.05  
0.02  
Single Pulse  
T
Duty = t/T  
R
= 6.25°C/W  
th (ch-c)  
0.01  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(S)  
w
Safe operating area  
E
− T  
AS  
ch  
30  
10  
200  
160  
120  
80  
I
I
max (pulsed) *  
D
D
100 μs *  
1 ms *  
max (pulsed) *  
3
1
I
max (continuous)  
D
DC operation  
Tc = 25°C  
0.3  
0.1  
40  
*: Single nonrepetitive pulse  
Tc = 25°C  
0
25  
50  
75  
100  
125  
150  
00.3  
00.1  
Curves must be derated  
linearly with increase in  
temperature.  
Channel temperature (initial) Tch (°C)  
V
max  
DSS  
1
10  
100  
1000  
Drain-source voltage  
V
DS  
(V)  
B
VDSS  
15 V  
I
AR  
−15 V  
V
V
DS  
DD  
Test circuit  
Waveform  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω  
VDSS  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
= 90 V, L = 48.4 mH  
B
VDSS  
DD  
5
2006-11-06  
2SK3373  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-06  
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ETC

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ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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