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2SK3446

型号：

2SK3446

描述：

硅N通道功率MOS FET电源开关[ Silicon N Channel Power MOS FET Power Switching ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

10 页

PDF大小：

105 K

下载PDF手册
2SK3446  
Silicon N Channel Power MOS FET  
Power Switching  
ADE-208-1566F (Z)  
7th. Edition  
Jan. 2003  
Features  
•
•
•
•
Capable of 2.5 V gate drive  
Low drive current  
Low on-resistance  
RDS(on)=1.5 Ω typ. (at VGS = 4 V)  
Outline  
TO-92MOD.  
D
G
1. Source  
2. Drain  
3. Gate  
3
2
1
S
2SK3446  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
150  
VGSS  
10  
V
ID  
1
A
Note1  
Drain peak current  
ID(pulse)  
4
A
Body-drain diode reverse drain current IDR  
1
A
Channel dissipation  
Channel temperature  
Storage temperature  
PchNote2  
0.9  
W
°C  
°C  
Tch  
150  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Ta = 25°C  
Rev.6, Jan. 2003, page 2 of 10  
2SK3446  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
—
Max  
—
Unit  
V
Test Conditions  
Drain to source breakdown voltage V(BR)DSS  
Gate to source breakdown voltage V(BR)GSS  
150  
10  
—
—
0.5  
—
—
0.8  
—
—
—
—
—
—
—
—
—
—
—
—
ID = 10 mA, VGS = 0  
IG = 100 µA, VDS = 0  
VGS = 8 V, VDS = 0  
VDS = 150 V, VGS = 0  
VDS = 10 V, I D = 1 mA  
ID = 0.5 A, VGS = 4 VNote3  
ID = 0.5 A, VGS = 2.5 VNote3  
ID = 0.5 A, VDS = 10 VNote3  
VDS = 10 V  
—
—
V
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
Static drain to source on state  
resistance  
IGSS  
—
10  
1
µA  
µA  
V
IDSS  
—
VGS(off)  
RDS(on)  
RDS(on)  
|yfs|  
—
1.5  
1.95  
2.5  
—
1.5  
1.9  
1.4  
98  
31  
14  
3.5  
0.5  
1.8  
8
Ω
Ω
Forward transfer admittance  
Input capacitance  
S
Ciss  
Coss  
Crss  
Qg  
—
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
Output capacitance  
Reverse transfer capacitance  
Total gate charge  
—
VGS = 0  
—
f = 1 MHz  
—
VDD = 100 V  
Gate to source charge  
Gate to drain charge  
Turn-on delay time  
Qgs  
Qgd  
td(on)  
—
VGS = 4 V  
—
ID = 1 A  
—
VGS = 4 V, ID = 0.5 A  
RL = 60 Ω  
Rise time  
tr  
12  
34  
19  
1.0  
60  
—
Turn-off delay time  
td(off)  
—
Fall time  
tf  
—
Body–drain diode forward voltage VDF  
1.5  
—
IF = 1 A, VGS = 0Note3  
Body–drain diode reverse recovery trr  
ns  
IF = 1 A, VGS = 0  
time  
diF/ dt =100 A/µs  
Notes: 3. Pulse test  
Rev.6, Jan. 2003, page 3 of 10  
2SK3446  
Main Characteristics  
Maximum Safe Operation Area  
Power vs. Temperature Derating  
1.6  
1.2  
0.8  
0.4  
10  
3
1
100 µs  
1 ms  
0.3  
0.1  
Operation in  
this area is  
limited by RDS(on)  
0.03  
0.01  
0.003  
0.001  
Ta = 25°C  
0
50  
100  
150  
200  
0.1 0.3  
1
3
10 30 100  
500  
(V)  
Drain to Source Voltage  
V
DS  
Ambient Temperature Ta (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
2.5  
2
5
4
3
2
1
Pulse Test  
V
= 10 V  
DS  
Pulse Test  
2.5 V  
4 V  
3 V  
Tc = -25°C  
25°C  
75°C  
2 V  
1.5  
1
VGS = 1.5 V  
0.5  
0
0
2
4
6
8
10  
(V)  
2
4
6
8
DS  
10  
Drain to Source voltage  
V
(V)  
Gate to Source Voltage  
V
GS  
Rev.6, Jan. 2003, page 4 of 10  
2SK3446  
Static Drain to Source on State Resistance  
vs. Drain Current  
10  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
3
2
Pulse Test  
Pulse Test  
V
= 2.5 V  
5
GS  
2
1
4 V  
I
= 1 A  
D
0.5  
1
0.5 A  
0.2 A  
0.2  
0.1  
0
0
6
8
2
4
10  
(V)  
0.1  
1
Drain Current  
3
10  
0.3  
Gate to Source Voltage  
V
GS  
I
(A)  
D
Static Drain to Source on State Resistance  
vs. Temperature  
Forward Transfer Admittance vs.  
Drain Current  
5
10  
Pulse Test  
3
1
4
3
2
1
0.2 A  
0.5 A  
Tc = -25°C  
I
= 1 A  
D
25°C  
75°C  
0.3  
0.1  
0.2 A  
0.5 A  
ID = 1 A  
VGS = 2.5 V  
VGS = 4 V  
0.03  
0.01  
V
= 10 V  
DS  
Pulse Test  
0
–25  
0
25 50 75 100 125 150  
0.01 0.03 0.1 0.3  
1
3
10  
Drain Current I (A)  
Case Temperature Tc (°C)  
D
Rev.6, Jan. 2003, page 5 of 10  
2SK3446  
Body-Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain Source Voltage  
1000  
1000  
300  
di / dt = 100 A / µs  
V
= 0, Ta = 25°C  
GS  
300  
100  
Ciss  
100  
30  
10  
30  
10  
Coss  
Crss  
3
3
1
V
= 0  
GS  
f = 1 MHz  
1
0.1  
0.3  
1
3
10  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
I
(A)  
Drain Source Voltage V  
(V)  
DR  
DS  
Dynamic Input Characteristics  
= 1 A  
Switching Characteristics  
160  
8
6
100  
I
D
t
d(off)  
VDD = 100 V  
50 V  
120  
80  
30  
10  
25 V  
V
DS  
t
f
4
2
V
GS  
t
d(on)  
40  
3
1
VDD = 100 V  
50 V  
V
= 4 V, VDD= 30 V  
GS  
PW = 5 µs, duty < 1 %  
25 V  
0
10  
0
0.1  
0.3  
1
3
10  
2
4
6
8
Drain Current  
I
(A)  
Gate Charge Qg (nC)  
D
Rev.6, Jan. 2003, page 6 of 10  
2SK3446  
Reverse Drain Current vs.  
Source to Drain Voltage  
Gate to Source Voltage vs. Temperature  
4
3
2
1
1.5  
VDS = 10 V  
Pulse Test  
ID = 10 mA  
1.0  
5 V  
1 mA  
0.5  
0.1 mA  
V
= 0, −5 V  
GS  
Pulse Test  
0
0
1
2
–25  
0
25 50 75 100 125 150  
Source to Drain Voltage  
V
SDF  
(V)  
Case Temperature Tc (°C)  
Normalized Transient Thermal Impedance vs. Pulse Width  
10  
1
D = 1  
θch - a(t) = γs (t) • θch - a  
0.1  
θch - a = 139°C/W, Ta = 25°C  
PW  
T
P
DM  
D =  
PW  
T
0.01  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
10000  
10 µ  
Pulse Width PW (s)  
Rev.6, Jan. 2003, page 7 of 10  
2SK3446  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
90%  
Vin  
V
DD  
= 30 V  
Vin  
4 V  
Vout  
10%  
Ω
50  
90%  
td(off)  
td(on)  
t
f
tr  
Rev.6, Jan. 2003, page 8 of 10  
2SK3446  
Package Dimensions  
As of July, 2002  
Unit: mm  
4.8 0.4  
3.8 0.4  
0.65 0.1  
0.75 Max  
0.60 Max  
0.55 Max  
0.5 Max  
1.27  
2.54  
Hitachi Code  
JEDEC  
TO-92 Mod  
—
JEITA  
Mass (reference value)  
Conforms  
0.35 g  
Rev.6, Jan. 2003, page 9 of 10  
2SK3446  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-6538-6533/6538-8577  
Fax : <65>-6538-6933/6538-3877  
URL : http://semiconductor.hitachi.com.sg  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-2735-9218  
Fax : <852>-2730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 778322  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Str 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
URL : http://semiconductor.hitachi.com.tw  
Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan.  
Colophon 7.0  
Rev.6, Jan. 2003, page 10 of 10  
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