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2SK3476_07

型号:

2SK3476_07

描述:

硅N沟道MOS型VHF波段和UHF波段放大器的应用[ Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

4 页

PDF大小:

166 K

2SK3476  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK3476  
VHF- and UHF-band Amplifier Applications  
Unit: mm  
(Note)The TOSHIBA products listed in this document are intended for high  
frequency Power Amplifier of telecommunications equipment.These  
TOSHIBA products are neither intended nor warranted for any other  
use.Do not use these TOSHIBA products listed in this document except for  
high frequency Power Amplifier of telecommunications equipment.  
Output power: P = 7.0 W (min)  
O
Gain: G = 11.4dB (min)  
P
Drain efficiency: η = 60% (min)  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
10  
V
V
DSS  
Gain-source voltage  
Drain current  
GSS  
I
3
A
D
Power dissipation  
P
(Note 1)  
20  
W
°C  
°C  
D
Channel temperature  
Storage temperature range  
T
ch  
150  
45~150  
JEDEC  
JEITA  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-5N1A  
Weight: 0.08 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)  
Marking  
2
Type name  
UC  
F
1
3
**  
Dot  
Lo No.  
1. Gate  
2. Source (heat sink)  
3. Drain  
Caution  
Please take care to avoid generating static electricity when handling this transistor.  
1
2007-11-01  
2SK3476  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Drain cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
V
V
V
V
V
= 20 V, V  
= 5 V  
= 0 V  
GS  
5
5
μA  
μA  
V
DSS  
DS  
GS  
DS  
GS  
DS  
DS  
DS  
Gate-source leakage current  
Threshold voltage  
Drain-source on-voltage  
Forward transconductance  
Input capacitance  
Output capacitance  
Output power  
I
GSS  
V
= 7.2 V, I = 2 mA  
0.55  
1.05  
18  
1
1.55  
th  
DS (ON)  
D
V
= 10 V, I = 75 mA  
mV  
S
D
Y
fs  
= 7.2 V, I  
= 1 A  
DS  
C
= 7.2 V, V  
= 7.2 V, V  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
53  
49  
pF  
pF  
W
iss  
GS  
GS  
C
oss  
P
7
O
D
V
I
= 7.2 V,  
DS  
η
= 500 mA (V  
= adjust),  
GS  
Drain efficiency  
60  
11.4  
%
idle  
f = 520 MHz, P = 500 mW,  
i
Power gain  
G
dB  
P
V
= 6.0 V,  
DS  
Low voltage output power  
Load mismatch  
P
I
= 500 mA (V = adjust),  
5
W
OL  
idle  
GS  
f = 520 MHz, P = 500 mW,  
i
V
V
= 10 V, P = 7 W,  
O
DS  
GS  
= adjust, P = adjust,  
i
No degradation  
f = 520 MHz,  
VSWR LOAD 20:1 all phase  
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.  
Output Power Test Fixture  
(Test Condition: f = 520 MHz, V = 7.2 V, I  
= 500 mA, P = 500 mW)  
DS  
idle  
i
C11  
R1  
C5  
C4  
C9  
C1 C2 C3  
C12  
C10  
P
P
O
i
L1  
L2  
C6 C7 C8  
C15  
Z
G
= 50 Ω  
Z = 50 Ω  
L
C13  
C14  
R2  
V
V
DS  
GS  
C1: 15 pF  
C2: 11 pF  
C3: 9 pF  
C4: 30 pF  
C5: 30 pF  
C6: 11 pF  
C7: 8 pF  
C8: 9 pF  
L1: φ0.6 mm enamel wire, 5.8ID, 4T  
L2: φ0.6 mm enamel wire, 5.8ID, 8T  
R1: 2.2 Ω  
R2: 1.5 kΩ  
C9: 2200 pF  
C10: 2200 pF  
C11: 2200 pF  
C12: 10000 pF  
C13: 10 μF  
C14: 10000 pF  
C15: 10 μF  
2
2007-11-01  
2SK3476  
P
– P  
P – P  
O
O
i
i
12  
10  
8
20  
15  
10  
5
f = 520 MHz  
= 7.2 V  
f = 520 MHz  
I = 500 mA  
V
DS  
idle  
Tc = 25°C  
700 mA  
9.6 V  
Tc = 25°C  
500 mA  
I
= 300 mA  
idle  
6
7.2 V  
4
V
= 6.0 V  
DS  
2
0
0
0
200  
400  
600  
800  
800  
800  
1000  
1000  
1000  
0
200  
400  
600  
800  
800  
800  
1000  
Input power  
P
i
(mW)  
Input power  
P
i
(mW)  
η
η
– P  
– P  
i
D
i
D
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
f = 520 MHz  
= 7.2 V  
f = 520 MHz  
I = 500 mA  
V
DS  
Tc = 25°C  
idle  
Tc = 25°C  
700 mA  
500 mA  
V
= 6.0 V  
DS  
7.2 V  
I
= 300 mA  
idle  
9.6 V  
0
200  
400  
600  
0
200  
400  
600  
1000  
Input power  
P
i
(mW)  
Input power  
P
i
(mW)  
η
P
– P  
– P  
i
O
i
D
12  
10  
8
100  
80  
60  
40  
20  
0
f = 520 MHz  
f = 520 MHz  
V
I
= 7.2 V  
DS  
V
= 7.2 V  
DS  
= 500 mA  
idle  
I
= 500 mA  
idle  
20°C  
20°C  
60°C  
25°C  
60°C  
6
Tc = 100°C  
25°C  
Tc = 100°C  
4
2
0
0
200  
400  
600  
0
200  
400  
600  
1000  
Input power  
P
i
(mW)  
Input power  
P
i
(mW)  
Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves.  
3
2007-11-01  
2SK3476  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2007-11-01  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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