找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3637

型号:

2SK3637

描述:

硅N沟道功率MOSFET[ Silicon N-channel power MOSFET ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

64 K

Power MOSFETs  
2SK3637  
Silicon N-channel power MOSFET  
Unit: mm  
15.5 0.5  
3.0 0.3  
5˚  
φ 3.2 0.1  
For PDP/For high-speed switching  
5˚  
Features  
Low on-resistance, low Qg  
High avalanche resistance  
5˚  
5˚  
5˚  
(4.0)  
2.0 0.2  
Absolute Maximum Ratings TC = 25°C  
1.1 0.1  
0.7 0.1  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
5.45 0.3  
Drain-source surrender voltage  
Gate-source surrender voltage  
200  
10.9 0.5  
30  
V
5˚  
50  
200  
A
Drain current  
1
2
3
1: Gate  
2: Drain  
3: Source  
Peak drain current  
IDP  
A
Avalanche energy capability *  
EAS  
PD  
2000  
100  
mJ  
W
TOP-3E-A1 Package  
Power  
dissipation  
Ta = 25°C  
3
Internal Connection  
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
D
S
Tstg  
55 to +150  
Note) : L = 0.8 mH, I = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C  
*
L
G
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Gate-drain surrender voltage  
Diode forward voltage  
Symbol  
VDSS  
VDSF  
Vth  
Conditions  
Min  
Typ  
Max  
Unit  
V
ID = 1 mA, VGS = 0  
200  
IDR = 50 A, VGS = 0  
VDS = 25 V, ID = 10 mA  
VDS = 160 V, VGS = 0  
1.5  
4
V
Gate threshold voltage  
2
V
Drain-source cutoff current  
Gate-source cutoff currentt  
Drain-source on resistance  
Forward transfer admittance  
IDSS  
100  
1
µA  
µA  
mΩ  
S
IGSS  
VGS = 30 V, VDS = 0  
RDS(on) VGS = 10 V, ID = 25 A  
29  
30  
40  
Yfs  
VDS = 25 V, ID = 25 A  
15  
Short-circuit forward transfer capacitance  
(Common-source)  
Ciss  
VDS = 25 V, VGS = 0, f = 1 MHz  
4550  
pF  
Short-circuit output capacitance  
(Common-source)  
Coss  
Crss  
750  
75  
pF  
pF  
Reverse transfer capacitance  
(Common-source)  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
VDD = 100 V, ID = 25 A  
50  
ns  
ns  
ns  
ns  
ns  
nC  
RL = 4 , VGS = 10 V  
125  
390  
140  
210  
820  
Turn-off delay time  
Fall time  
Reverse recovery time  
Reverse recovery charge  
trr  
L = 230 µH, VDD = 100 V  
Qrr  
IDR = 25 A, di /dt = 100 A/ µs  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2004  
SJG00035AED  
1
2SK3637  
Electrical Characteristics (Continued) TC = 25°C 3°C  
Parameter  
Total gate charge  
Symbol  
Qg  
Conditions  
VDD = 100 V, ID = 25 A  
VGS = 10 V  
Min  
Typ  
85  
Max  
Unit  
nC  
Gate-source charge  
Qgs  
30  
nC  
Gate-drain charge  
Qgd  
12  
nC  
Channel-case heat resistance  
Channel-atmosphere heat resistance  
Rth(ch-c)  
Rth(ch-a)  
1.25  
41.6  
°C/W  
°C/W  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Safe operation area  
103  
Non repetitive pulse  
TC = 25°C  
IDP  
t = 100 µs  
102  
ID  
DC  
10  
1 ms  
10 ms  
1
100 ms  
101  
1
10  
Drain-source voltage VDS  
102  
103  
(
)
V
SJG00035AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.178579s