2SK3647-01
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
Foot Print Pattern
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
100
Unit
V
Drain-source voltage
V
VDSX *5
ID Tc=25
Ta=25
ID(puls]
70
°C
°C
A
Continuous drain current
±41
5.2 **
A
±
±164
±30
41
A
Pulsed drain current
Gate-source voltage
V
VGS
Equivalent circuit schematic
A
Non-repetitive Avalanche current IAS *2
mJ
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
EAS *1
204.7
20
D : Drain
kV/µs
kV/µs
dVDS/dt *4
dV/dt *3
5
°C
°C
PD Tc=25
Ta=25
Tch
150
W
G : Gate
2.4 **
Operating and storage
temperature range
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
+150
-55 to +150
°C
°C
Tstg
S1 : Source
S2 : Source
<
*1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
=
*4 VDS 100V *5 VGS=-30V *6 t=60sec f=60Hz
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
VDS=VGS
V
Drain-source breakdown voltaget
Gate threshold voltage
100
µ
ID= 250 A
V
3.0
5.0
25
µA
Tch=25°C
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
44
IGSS
RDS(on)
gfs
nA
10
34
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=15A VGS=10V
mΩ
S
9
18
ID=15A VDS=25V
VDS=75V
Ciss
1110
280
22
1665
420
33
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
VCC=48V ID=15A
Reverse transfer capacitance
Turn-on time ton
ns
16
24
23
35
VGS=10V
31
47
td(off)
tf
Turn-off time toff
RGS=10 Ω
16
24
32
48
QG
nC
VCC=50V
ID=30A
Total Gate Charge
13
20
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
9
14
VGS=10V
41
µ
A
L=146 H Tch=25°C
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.10
1.65
VSD
trr
Qrr
V
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs
Tch=25°C
0.1
µs
µC
0.38
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.833 °C/W
Thermal resistance
Rth(ch-a)
Rth(ch-a)
channel to ambient
channel to ambient
°C/W
°C/W
87.0
52.0
**
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
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