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2SK3759

型号：

2SK3759

描述：

东芝场效应晶体管硅N沟道MOS型（ -MOSⅥ ）[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSサ) ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

91 K

下载PDF手册
2SK3759  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)  
2SK3759  
unit：ｍｍ  
Switching Regulator Applications  
·
·
·
·
Low drain-source ON resistance: R  
High forward transfer admittance: |Y | = 6.5S (typ.)  
= 0.75Ω (typ.)  
DS (ON)  
fs  
4.x  
4.7 max  
10.5 max  
Low leakage current: I  
DSS  
= 100 μA (V  
= 500 V)  
= 10 V, I = 1 mA)  
D
3.84±0.2  
DS  
1.3  
1
Enhancement-mode: V = 2.0~4.0 V (V  
th  
DS  
Maximum Ratings (Ta  
= 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
V
V
500  
500  
±30  
8
V
V
V
DSS  
DGR  
GSS  
1.5 max  
0.81  
Drain-gate voltage (R = 20 kW)  
GS  
0.45  
Gate-source voltage  
2.7  
DC  
(Note 1)  
I
D
2.54  
Pulse (t = 1 ms)  
I
32  
DP  
(Note 1)  
1
2
3
Drain power dissipation (Tc = 25°C)  
P
74  
48  
W
D
Single pulse avalanche energy  
(Note 2)  
E
AS  
mJ  
1. Gate  
2. Drain(HEAT SINK)  
3. Source  
Avalanche current  
I
8
7.4  
A
AR  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
JEDEC  
JEITA  
SC-46  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
TO-220AB  
TOSHIBA  
―
Thermal Characteristics  
Weight : 2.0g(typ.)  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.68  
83.3  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Please use devices on conditions that the channel temperature is below 150°C.  
Note 2: V = 90 V, T = 25°C(initial), L = 1.28 mH, I = 8 A, R = 25 W  
DD ch  
AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
2
1
3
2004-02-26  
1
2SK3759  
Electrical Characteristics (Ta  
= 25°C)  
Characteristics  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
¾
±30  
¾
¾
¾
±10  
¾
mA  
V
GSS  
GS  
DS  
Gate-source breakdown voltage  
Drain cut-off current  
V
I
D
= ±10 mA, V  
= 0 V  
GS  
(BR) GSS  
I
V
= 500 V, V = 0 V  
GS  
¾
100  
¾
mA  
V
DSS  
DS  
Drain-source breakdown voltage  
Gate threshold voltage  
V
I
D
= 10 mA, V = 0 V  
GS  
500  
2.0  
¾
¾
(BR) DSS  
V
V
V
V
= 10 V, I = 1 mA  
¾
4.0  
0.85  
¾
V
th  
DS (ON)  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 4 A  
0.75  
6.5  
1050  
10  
W
S
D
ï Y  
f s  
ï
= 10 V, I = 4 A  
3.0  
¾
D
C
iss  
¾
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
C
rss  
¾
¾
DS  
C
oss  
¾
110  
¾
10 V  
I
D
= 4 A  
V
OUT  
Rise time  
t
r
¾
¾
¾
¾
26  
45  
¾
¾
¾
¾
V
GS  
0 V  
R =  
L
Turn-on time  
Switching time  
t
on  
50 W  
50 W  
Fall time  
t
f
38  
~
V
200 V  
DD
-  
<
Turn-off time  
t
off  
Duty 1%, t = 10 ms  
130  
=
w
28  
16  
12  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Q
¾
¾
¾
¾
¾
¾
g
~
V
400 V, V  
= 10 V, I = 8 A  
nC  
Q
gs  
DD
-  
GS  
D
Q
gd  
Source-Drain Ratings and Characteristics (Ta  
= 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
8
Unit  
A
Continuous drain reverse current  
I
¾
¾
¾
¾
DR  
(Note 1)  
(Note 1)  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
I
¾
¾
¾
¾
¾
¾
32  
- 1.7  
¾
A
V
DRP  
V
I
= 8 A, V  
= 8 A, V  
DR  
= 0 V  
DSF  
DR  
GS  
GS  
t
rr  
I
= 0 V,  
1200  
10  
ns  
mC  
dI /dt = 100 A/ms  
Reverse recovery charge  
Q
rr  
¾
DR  
Marking  
※ Lot Number  
※
Date  
TYPE  
K3759  
Month (Starting from Alphabet A)  
Year (Last Number of the Christian Era)  
2004-02-26  
2
2SK3759  
I
D
– V  
I
D
– V  
DS  
DS  
COMMON SOURCE  
10  
20  
16  
10､15  
5.25  
5
10､15  
6
Tc = 25°C  
6
PULSE TEST  
8
6
4
5.5  
4.75  
12  
8
5
4.5  
4.25  
4.5  
2
0
4
0
V
= 4 V  
GS  
V
= 4 V  
GS  
0
2
4
6
8
10  
0
10  
20  
30  
40  
50  
DRAIN-SOURCE VOLTAGE V  
(V)  
DRAIN-SOURCE VOLTAGE V  
(V)  
DS  
DS  
I
D
– V  
V
– V  
DS GS  
GS  
20  
16  
12  
8
10  
8
COMMON SOURCE  
Tc = 25℃  
COMMON SOURCE  
= 20 V  
V
DS  
PULSE TEST  
PULSE TEST  
6
I
D
= 8 A  
4
4
2
Tc = - 55°C  
100  
2
4
25  
0
0
0
0
2
4
6
8
GS  
10  
4
8
12  
16  
20  
GATE-SOURCE VOLTAGE V  
(V)  
GATE-SOURCE VOLTAGE V  
(V)  
GS  
ï Y ï – I  
R
– I  
f s  
D
DS (ON) D  
100  
10  
1
10  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
Tc = - 55°C  
25  
100  
1
V
GS  
= 10 V､15V  
COMMON SOURCE  
= 20 V  
V
DS  
PULSE TEST  
10  
0.1  
0.1  
0.1  
0.01  
1
100  
0.1  
1
10  
DRAIN CURRENT  
I
D
(A)  
DRAIN CURRENT  
I
D
(A)  
2004-02-26  
3
2SK3759  
R
– Tc  
I
– V  
DS  
DS (ON)  
DR  
5
4
3
2
1
100  
10  
COMMON SOURCE  
COMMON SOURCE  
PULSE TEST  
Tc = 25°C  
PULSE TEST  
4
1
I
D
= 8A  
V
GS  
= 10 V  
10  
2
5
3
V
GS  
= 0, - 1 V  
1
0
- 80  
0.1  
0
- 40  
0
40  
80  
120  
160  
- 0.2  
- 0.4  
- 0.6  
- 0.8  
- 1.0  
- 1.2  
CASE TEMPERATURE Tc (°C)  
DRAIN-SOURCE VOLTAGE V  
(V)  
DS  
CAPACITANCE – V  
V
– Tc  
th  
DS  
10000  
5
4
C
iss  
1000  
100  
10  
3
2
1
C
oss  
C
rss  
COMMON SOURCE  
COMMON SOURCE  
= 0 V  
V
GS  
V
= 10 V  
= 1 mA  
DS  
f = 1 MHz  
Tc = 25°C  
I
D
PULSE TEST  
- 40  
1
0.1  
0
- 80  
1
3
5
10  
30 50 100  
0
40  
80  
120  
160  
DRAIN-SOURCE VOLTAGE V  
(V)  
CASE TEMPERATURE Tc (°C)  
DS  
DYNAMIC INPUT / OUTPUT  
CHARACTERISTICS  
P – Tc  
D
80  
60  
40  
20  
0
500  
20  
16  
400  
300  
200  
100  
0
V
DS  
V
= 100 V  
DD  
12  
8
400  
200  
V
GS  
COMMON SOURCE  
= 8 A  
I
D
4
Tc = 25°C  
PULSE TEST  
0
50  
0
40  
80  
120  
160  
0
10  
20  
30  
40  
CASE TEMPERATURE Tc (°C)  
TOTAL GATE CHARGE Q (nC)  
g
2004-02-26  
4
2SK3759  
r
– t  
w
th  
10  
1
Duty=0.5  
0.2  
0.1  
P
DM  
SINGLE PULSE  
0.1  
t
0.05  
T
0.02  
0.01  
Duty = t/T  
R
= 1.68°C/W  
th (ch-c)  
0.01  
10μ  
100μ  
1ｍ  
10ｍ  
100ｍ  
1
10  
PULSE WIDTH  
t
w
(s)  
SAFE OPERATING AREA  
E
– T  
AS ch  
100  
10  
1
60  
50  
40  
I
max (PULSED) *  
D
100 ms *  
I
D
max (CONTINUOUS) *  
1 ms *  
30  
20  
10  
DC OPERATION  
Tc = 25°C  
※ SINGLE NONREPETITIVE PULSE  
Tc=25℃  
0
25  
0.1  
50  
75  
100  
125  
150  
CURVES MUST BE DERATED  
LINEARLY WITH INCREASE IN  
TEMPERATURE.  
CHANNEL TEMPERATURE (INITIAL)  
(°C)  
T
ch  
V
DSS  
max  
0.01  
1
10  
100  
1000  
B
VDSS  
15 V  
DRAIN-SOURCE VOLTAGE V  
(V)  
DS  
I
AR  
- 15 V  
V
V
DS  
DD  
TEST CIRCUIT  
WAVE FORM  
æ
ö
÷
DD ø  
1
2
R
= 25 W  
B
2
G
VDSS  
ç
×L×I ×  
=
Å
AS  
ç
÷
-
V
= 90 V, L = 1.28 mH  
B
V
DD  
è
VDSS  
2004-02-26  
5
2SK3759  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
· The information contained herein is subject to change without notice.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire sys tem, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
2004-02-26  
6
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