2SK3771-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
TO-220F
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
100
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
VDSX
ID
70
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
29
A
ID(puls]
VGS
IAR
±116
±30
A
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
29
A
Note *1
Note *2
Source(S)
EAS
376.4
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=12A,L=3.14mH,
EAR
3.7
mJ
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
PD
20
5
kV/µs
<
VDS 100V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
37
Tc=25°C
Ta=25°C
W
2.16
+150
Operating and Storage
Temperature range
Isolation Voltage
Tch
°C
°C
Tstg
VISO
-55 to +150
2
t=60sec. f=60Hz
kVrms
<
<
<
Note *4:IF -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
100
3.0
ID= 250 A
VGS=0V
VDS=VGS
µ
V
5.0
25
ID= 250 A
µA
µA
nA
VDS=100V VGS=0V
Tch=25°C
Zero Gate Voltage Drain Current
IDSS
250
100
59
Tch=125°C
VDS=80V VGS=0V
VGS=±30V
VDS=0V
ID=14.5A VGS=10V
ID=14.5A VDS=25V
VDS=75V
IGSS
RDS(on)
gfs
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
45
12
740
200
15
13
6
mΩ
S
6
Ciss
Coss
Crss
td(on)
tr
1100
300
22
19
9
pF
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
VCC=48V
ns
ID=14.5A
VGS=10V
20
8
30
12
35
15
11
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
VCC=50V
ID=29A
23
10
7
QG
nC
Total Gate Charge
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
VGS=10V
1.00
110
0.5
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=29A VGS=0V Tch=25°C
IF=29A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
3.378 °C/W
Thermal resistance
°C/W
58
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