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2SK3847

型号：

2SK3847

描述：

硅N沟道MOS型开关稳压器， DC / DC转换器和电机驱动应用[ Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

308 K

下载PDF手册
2SK3847  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)  
2SK3847  
Switching Regulator, DC/DC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 12 mΩ (typ.)  
DS (ON)  
: |Y | = 36 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 40 V)  
DSS  
DS  
z Enhancement mode : V = 1.5 to 2.5 V  
th  
(V  
DS  
= 10 V, I = 1 mA)  
D
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Drain−source voltage  
V
40  
40  
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
32  
V
GSS  
DC (Note 1)  
I
D
A
Drain current  
Pulse (Note 1)  
I
96  
A
DP  
Drain power dissipation  
P
30  
W
D
AS  
AR  
JEDEC  
JEITA  
―
―
Single-pulse avalanche energy  
E
47  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
32  
3
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 1.5 g (typ.)  
AR  
T
ch  
150  
Storage temperature range  
T
−55~150  
stg  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
4.17  
83.3  
Unit  
°C/W  
°C/W  
Thermal resistance, channel to case  
R
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V  
R
= 25 V, T = 25°C (initial), L = 48 μH,  
ch  
DD  
= 25 Ω, I  
= 32 A  
AR  
G
Note 3: Repetitive rating; pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-10S2B  
Weight: 1.5 g (typ.)  
1
2006-09-27  
2SK3847  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
Drain cutoff current  
I
V
V
= ±16 V, V = 0 V  
DS  
—
—
40  
15  
1.5  
—
—
18  
—
—
—
—
—
±10  
100  
—
μA  
μA  
GSS  
GS  
DS  
I
= 40 V, V  
= 0 V  
DSS  
GS  
GS  
GS  
V
V
I
I
= 10 mA, V  
= 10 mA, V  
= 0 V  
—
(BR) DSS  
(BR) DSX  
D
D
Drain−source breakdown voltage  
Gate threshold voltage  
V
V
= −20 V  
—
—
V
V
V
V
V
= 10 V, I = 1 mA  
—
2.5  
26  
16  
—
th  
DS  
GS  
GS  
DS  
D
= 4.5 V, I = 16 A  
19  
D
Drain−source ON resistance  
R
mΩ  
S
DS (ON)  
= 10 V, I = 16 A  
12  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 16 A  
36  
D
C
C
1980  
210  
300  
—
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
—
DS  
rss  
C
—
oss  
Rise time  
t
r
—
—
—
7
—
—
—
I
= 16 A  
D
10 V  
GS  
Output  
V
0 V  
Turn−on time  
t
22  
10  
on  
Switching time  
ns  
Fall time  
t
f
V
≈ 20 V  
DD  
Turn−off time  
t
—
—
60  
40  
—
—
off  
Duty ≤ 1%, tw = 10 μs  
Total gate charge (gate−source  
plus gate−drain)  
Q
g
V
≈ 32 V, V  
= 10 V, I = 32 A  
nC  
DD  
GS  
D
Gate−source charge  
Q
—
—
28  
12  
—
—
gs  
Gate−drain (“Miller”) charge  
Q
gd  
Source−Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
—
Typ.  
—
Max  
32  
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
—
—
DR  
Pulse drain reverse current  
(Note 1)  
I
—
—
96  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 32 A, V  
= 32 A, V  
= 0 V  
= 0 V  
—
—
—
—
40  
24  
−1.5  
—
V
DSF  
DR  
DR  
GS  
GS  
t
ns  
nC  
rr  
dl /dt = 50 A/μS  
DR  
Qrr  
—
Marking  
Part No. (or abbreviation code)  
Lot No.  
K3847  
A line indicates a  
lead (Pb) – free package or  
lead (Pb) – free finish.  
2
2006-09-27  
2SK3847  
I
– V  
I
– V  
DS  
D
DS  
D
5
20  
16  
12  
8
100  
80  
60  
40  
20  
0
4.25  
Common source  
Tc = 25°C  
Pulse test  
10  
6
Common source  
Tc = 25°C  
Pulse test  
5.5  
10  
8
8
4
6
3.75  
3.5  
5.5  
5
4.75  
4.75  
4.5  
4.5  
4.25  
4
3.25  
3.75  
4
V
= 3 V  
V
= 3 V  
GS  
GS  
3.5  
3.25  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
0
1
2
4
6
8
10  
Drain−source voltage  
V
(V)  
Drain−source voltage  
V
(V)  
DS  
DS  
I
– V  
V
– V  
DS GS  
D
GS  
100  
80  
60  
40  
20  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
Common source  
Tc = 25°C  
Pulse test  
Common source  
= 10 V  
V
DS  
Pulse test  
I
= 32 A  
D
25  
16  
8
Tc = −55°C  
100  
0
2
4
6
8
10  
4
8
12  
16  
20  
Gate−source voltage  
V
(V)  
Gate−source voltage  
V
(V)  
GS  
GS  
R
− I  
DS (ON)  
D
⎪Y ⎪ − I  
fs  
D
1000  
100  
10  
100  
Common source  
Tc = 25°C  
Common source  
= 10 V  
V
DS  
Pulse test  
Pulse test  
Tc = −55°C  
100  
25  
10  
V
= 4.5 V  
GS  
10  
1
1
10  
100  
10  
100  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2006-09-27  
2SK3847  
R
− Tc  
I
− V  
DR DS  
DS (ON)  
50  
40  
30  
20  
10  
0
100  
Common source  
Pulse test  
10  
I
= 32 A  
D
5
16  
3
10  
8
V
V
= 4.5 V  
GS  
1
V
= 0, −1 V  
GS  
I
= 32, 16, 8 A  
D
Common source  
Tc = 25°C  
= 10 V  
GS  
Pulse test  
1
−80  
−40  
0
40  
80  
120  
160  
100  
160  
0
−0.4  
−0.8  
−1.2  
−1.6  
−2.0  
Case temperature Tc (°C)  
Drain−source voltage  
V
(V)  
DS  
C − V  
V
− Tc  
th  
DS  
10000  
1000  
100  
5
4
3
2
1
0
Common source  
= 10 V  
Common source  
= 0 V  
V
I
DS  
= 1 mA  
V
GS  
D
f = 1 MHz  
Tc = 25°C  
Pulse test  
C
iss  
C
oss  
C
rss  
0.1  
1
10  
−80  
−40  
0
40  
80  
120  
160  
Case temperature Tc (°C)  
Drain−source voltage  
V
(V)  
DS  
Dynamic input/output  
characteristics  
P
− Tc  
D
50  
40  
30  
20  
10  
0
50  
20  
Common source  
I
= 32 A  
D
Tc = 25°C  
Pulse test  
40  
30  
20  
10  
16  
12  
8
V
DS  
16  
8
V
= 32 V  
DS  
4
V
GS  
0
0
0
0
40  
80  
120  
20  
40  
60  
80  
100  
Case temperature Tc (°C)  
Total gate charge  
Q
g
(nC)  
4
2006-09-27  
2SK3847  
r
th  
− t  
w
10  
1
Duty = 0.5  
0.2  
P
DM  
0.1  
0.1  
0.01  
0.05  
0.02  
t
Single pulse  
T
Duty = t/T  
R
= 4.17°C/W  
th (ch-c)  
0.01  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(s)  
w
Safe operating area  
E
– T  
AS  
ch  
1000  
100  
10  
100  
80  
60  
40  
20  
0
I
max (pulse) *  
D
1 ms *  
I
max (continuous)  
D
10 ms *  
DC operation  
Tc = 25°C  
25  
50  
75  
100  
125  
ch  
150  
1
*
Single nonrepetitive pulse  
Channel temperature (initial)  
T
(°C)  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
B
VDSS  
15 V  
V
max  
DSS  
0.1  
0.1  
I
AR  
0 V  
1
10  
100  
V
V
DD  
DS  
B
Drain−source voltage  
V
(V)  
DS  
Test circuit  
Waveform  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω  
VDSS  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
= 25 V, L = 48 μH  
B
VDSS  
DD  
5
2006-09-27  
2SK3847  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-09-27  
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ETC

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