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2SK3935

型号：

2SK3935

描述：

硅N沟道MOS型开关稳压器的应用[ Silicon N-Channel MOS Type Switching Regulator Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

313 K

下载PDF手册
2SK3935  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)  
2SK3935  
Switching Regulator Applications  
Unit: mm  
z Low drain-source ON resistance  
z High forward transfer admittance  
: R  
= 0.18Ω (typ.)  
DS (ON)  
: |Y | = 10 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 450 V)  
DSS  
DS  
z Enhancement model : V = 2.0 to 4.0 V  
th  
(V  
DS  
= 10 V, I = 1 mA)  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
450  
450  
±30  
17  
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
1: Gate  
2: Drain  
3: Source  
DC (Note 1)  
Pulse(Note 1)  
I
A
D
Drain current  
I
68  
A
DP  
Drain power dissipation  
P
50  
W
JEDEC  
JEITA  
−
D
AS  
AR  
Single pulse avalanche energy  
(Note 2)  
SC-67  
2-10U1B  
Weight: 1.7 g (typ.)  
E
918  
mJ  
TOSHIBA  
Avalanche current  
I
17  
5
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
2
Characteristic  
Symbol  
Max  
2.5  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
62.5  
1
Note 1: Ensure that the channel temperature does not exceed 150°C during  
use of the device.  
Note 2:  
V
DD  
= 90 V, T = 25°C (initial), L = 5.3 mH, R = 25Ω, I  
= 17 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device. Handle with care.  
3
1
2006-11-06  
2SK3935  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
= ±25 V, V = 0 V  
DS  
—
±30  
—
—
—
±10  
—
μA  
V
GSS  
GS  
Drain-source breakdown voltage  
Drain cutoff current  
V
V
I
= ±10 μA, V  
= 0 V  
(BR) GSS  
G
GS  
= 450 V, V  
I
V
= 0 V  
—
100  
—
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
450  
2.0  
—
—
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
—
4.0  
0.25  
—
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 8.5 A  
0.18  
9.5  
3100  
20  
Ω
S
DS (ON)  
|Y |  
D
= 10 V, I = 8.5 A  
2.5  
—
fs  
D
C
C
—
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
—
—
DS  
rss  
C
—
270  
—
oss  
Rise time  
t
—
—
—
70  
130  
70  
—
—
—
r
I
= 8.5 A  
D
10 V  
GS  
Output  
V
0 V  
Turn-on time  
t
on  
Switching time  
ns  
Fall time  
t
f
V
≈ 200 V  
DD  
Turn-off time  
t
—
—
280  
62  
—
—
off  
Duty ≤ 1%, tw = 10 μs  
Total gate charge (gate-source  
plus gate-drain)  
Q
g
V
≈ 360 V, V  
= 10 V, I = 17 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
—
—
40  
22  
—
—
gs  
Gate-drain (“Miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
—
Typ.  
—
Max  
17  
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
—
—
DR  
Pulse drain reverse current  
(Note 1)  
I
—
—
68  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 17 A, V  
= 17 A, V  
= 0 V  
= 0 V  
—
—
—
—
1400  
21  
−1.7  
—
V
DSF  
DR  
DR  
GS  
GS  
t
ns  
μC  
rr  
dl  
/ dt = 100 A / μS  
DR  
Qrr  
—
Marking  
K3935  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-06  
2SK3935  
I
– V  
I – V  
D DS  
D
DS  
20  
16  
50  
40  
COMMON  
SOURCE  
Tc = 25°C  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
10  
10  
6.8  
6.6  
6.4  
8
PULSE TEST  
7.5  
8
7
6.2  
6
12  
8
30  
20  
7
5.8  
6.5  
6
5.4  
4
10  
0
V
= 5 V  
GS  
(V)  
V
= 5 V  
GS  
0
0
2
4
6
8
10  
0
4
8
12  
16  
20  
DRAIN−SOURCE VOLTAGE  
V
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
DS  
I
D
– V  
V
– V  
DS GS  
GS  
50  
10  
8
COMMON SOURCE  
= 20 V  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
V
DS  
PULSE TEST  
40  
30  
25  
6
4
2
Tc = −55°C  
100  
20  
I
= 15 A  
D
10  
0
7.5  
3.8  
0
0
0
2
4
8
12  
16  
20  
4
6
8
10  
GATE−SOURCE VOLTAGE  
V
GS  
(V)  
GATE−SOURCE VOLTAGE  
V
GS  
(V)  
⎪Y ⎪ – I  
fs  
R
− I  
D
D
DS (ON)  
1
100  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
COMMON SOURCE  
= 20 V  
V
DS  
PULSE TEST  
V
= 10 V  
GS  
10  
Tc = −55°C  
100  
0.1  
25  
1
0.1  
0.1  
0.01  
1
10  
100  
1
100  
10  
DRAIN CURRENT  
I
(A)  
DRAIN CURRENT  
I
(A)  
D
D
3
2006-11-06  
2SK3935  
R
– Tc  
I
– V  
DR DS  
DS (ON)  
0.6  
0.4  
0.2  
100  
10  
1
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
COMMON SOURCE  
V
= 10 V  
GS  
PULSE TEST  
7.5  
I
= 15 A  
D
10  
3.8  
5
3
1
V
= 0 V  
GS  
0
−80  
0.1  
0
−40  
0
40  
80  
120  
160  
−0.4  
−0.8  
−1.2  
−1.6  
−2.0  
CASE TEMPERATURE Tc (°C)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
C – V  
DS  
V
– Tc  
th  
10000  
5
4
3
2
1
COMMON SOURCE  
= 10 V  
V
DS  
= 1 mA  
I
D
C
iss  
PULSE TEST  
1000  
C
oss  
100  
10  
COMMON SOURCE  
= 0 V  
V
GS  
f = 1 MHz  
Tc = 25°C  
C
rss  
PULSE TEST  
0
−80  
0.1  
1
10  
100  
−40  
0
40  
80  
120  
160  
DRAIN−SOURCE VOLTAGE  
V
(V)  
CASE TEMPERATURE Tc (°C)  
DS  
DYNAMIC INPUT/OUTPUT  
CHARACTERISTICS  
P
– Tc  
D
80  
60  
40  
20  
0
500  
20  
400  
300  
200  
100  
0
16  
12  
8
V
DS  
V
= 100 V  
DD  
200  
400  
GS  
V
4
COMMON SOURCE  
I
= 17 A  
D
Tc = 25°C  
PULSE TEST  
0
100  
0
40  
80  
120  
160  
0
20  
40  
60  
80  
CASE TEMPERATURE Tc (°C)  
TOTAL GATE CHARGE  
Q
g
(nC)  
4
2006-11-06  
2SK3935  
r
th  
– t  
w
10  
1
Duty=0.5  
0.2  
0.1  
0.1  
0.05  
P
DM  
0.02  
0.01  
t
0.01  
T
SINGLE PULSE  
Duty = t/T  
R
= 2.5°C/W  
th (ch-c)  
0.001  
10μ  
100μ  
1ｍ  
10ｍ  
100ｍ  
1
10  
PULSE WIDTH  
t
w
(s)  
SAFE OPERATING AREA  
E
– T  
AS  
ch  
10  
10  
1000  
800  
600  
400  
200  
0
I
max (PULSE) *  
D
100 μs *  
I
max (CONTINUOUS)  
D
1 ms *  
DC OPERATION  
Tc = 25℃  
1
25  
50  
75  
100  
125  
150  
0.1  
*: SINGLE NONPETITIVE  
PULSE  
CHANNEL TEMPERATURE (INITIAL)  
T
ch  
(°C)  
Tc = 25°C  
Curves must be derated linearly  
with increase in temperature  
V
max  
DSS  
0.01  
1
10  
100  
1000  
B
VDSS  
15 V  
−15 V  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
I
AR  
V
V
DS  
DD  
TEST CIRCUIT  
WAVE FORM  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
= 25 Ω  
= 90 V, L = 5.3 mH  
VDSS  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
V
B
VDSS  
DD  
5
2006-11-06  
2SK3935  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-06  
厂商 型号 描述 页数 下载

PANASONIC

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

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PANASONIC

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