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2SK3980

型号:

2SK3980

描述:

N沟道MOSFET硅通用开关设备[ N-Channel Silicon MOSFET General-Purpose Switching Device ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

39 K

Ordering number : EN8641  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3980  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
1.8V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±10  
0.9  
3.6  
0.9  
3.5  
150  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
Mounted on a ceramic board (250mm20.8mm)  
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
60  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=60V, V =0V  
GS  
1
DSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
GSS  
V
(off)  
GS  
=10V, I =1mA  
0.4  
0.9  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =0.5A  
1.5  
S
D
R
(on)1  
I
I
I
=0.5A, V =4V  
GS  
635  
705  
850  
100  
9.5  
830  
990  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
DS  
DS  
DS  
D
D
D
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=0.3A, V =2.5V  
GS  
=0.1A, V =1.8V  
GS  
1310  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
6.7  
t (on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
8.8  
d
t
r
10.5  
21.5  
15.8  
ns  
Turn-OFF Delay Time  
Fall Time  
t (off)  
ns  
d
t
f
ns  
Marking : LS  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O1806PA SY IM TC-00000229  
No.8641-1/4  
2SK3980  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=30V, V =4V, I =0.9A  
2.1  
nC  
nC  
nC  
V
DS  
DS  
DS  
GS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=30V, V =4V, I =0.9A  
0.39  
0.28  
0.91  
GS  
D
=30V, V =4V, I =0.9A  
GS  
D
V
SD  
I =0.9A, V =0V  
S GS  
1.2  
Package Dimensions  
unit : mm (typ)  
Switching Time Test Circuit  
7007A-003  
V
=30V  
DD  
V
IN  
4V  
0V  
Top View  
I
=0.5A  
D
V
4.5  
1.6  
IN  
R =60Ω  
L
1.5  
D
V
OUT  
PW=10µs  
D.C.1%  
G
2SK3980  
1
2
3
P.G  
50Ω  
S
0.4  
0.5  
0.4  
1.5  
3.0  
0.75  
1 : Gate  
2 : Drain  
3 : Source  
Bottom View  
SANYO : PCP  
I
-- V  
I
-- V  
D
DS  
D
GS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.9  
V =10V  
DS  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.5V  
0.2  
0
0.1  
0
V
=1.0V  
GS  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V  
GS  
-- V  
IT07899  
IT07898  
No.8641-2/4  
2SK3980  
R
(on) -- V  
R
DS  
(on) -- Ta  
DS  
GS  
2000  
1800  
1600  
1400  
1200  
1000  
800  
1400  
1200  
1000  
800  
Ta=25°C  
I =0.5A  
D
I =0.3A  
D
600  
600  
400  
400  
200  
0
200  
0
0
1
2
3
4
5
6
7
8
9
10  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
-- V  
Ambient Temperature, Ta -- °C  
IT07900  
IT07901  
GS  
yfs -- I  
I
-- V  
S SD  
D
5
1.0  
V
=0V  
V
=10V  
7
5
GS  
DS  
3
2
3
2
0.1  
7
5
1.0  
7
5
3
2
0.01  
3
2
7
5
3
2
0.001  
0.1  
0.01  
2
3
5
7
2
3
5
7
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
0.1  
1.0  
Drain Current, I -- A  
IT07902  
Diode Forward Voltage, V  
-- V  
SD  
IT07903  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
7
5
5
V
V
=30V  
=4V  
f=1MHz  
DD  
GS  
3
2
3
2
100  
Ciss  
7
5
100  
7
5
3
2
t (of  
d
f)  
3
2
t (on)  
d
10  
7
5
10  
7
5
3
2
3
5
7
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT07905  
0.01  
0.1  
1.0  
Drain Current, I -- A  
Drain-to-Source Voltage, V  
-- V  
DS  
IT07904  
D
V
-- Qg  
A S O  
GS  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
7
5
V
=30V  
DS  
I
DP  
=3.6A  
<10µs  
I =0.9A  
D
3
2
I =0.9A  
D
1.0  
7
5
3
2
0.1  
7
5
Operation in this  
area is limited by R (on).  
DS  
3
2
Tc=25°C  
Single pulse  
Mounted on a ceramic board (250mm20.8mm)  
0.5  
0
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
0
0.5  
1.0  
1.5  
2.0  
2.5  
IT07906  
0.1  
1.0  
10  
100  
IT08299  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
-- V  
DS  
No.8641-3/4  
2SK3980  
P
-- Ta  
P
-- Tc  
D
D
1.0  
0.9  
0.8  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.6  
0.4  
0.2  
0
0.5  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
Case Tamperature, Tc -- °C  
IT08300  
IT08301  
Note on usage : Since the 2SK3980 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of October, 2006. Specifications and information herein are subject  
to change without notice.  
PS No.8641-4/4  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

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