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2SK410

型号：

2SK410

描述：

硅N沟道MOS场效应管（高频/甚高频功率放大器）[ Silicon N-Channel MOS FET (HF/VHF power amplifier) ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

53 K

下载PDF手册
2SK410  
Silicon N-Channel MOS FET  
Application  
HF/VHF power amplifier  
Features  
·
·
·
·
·
·
·
High breakdown voltage  
You can decrease handling current.  
Included gate protection diode  
No secondary–breakdown  
Wide area of safe operation  
Simple bias circuitry  
No thermal runaway  
Outline  
2SK410  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
180  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
±20  
V
ID  
8
A
Channel dissipation  
Channel temperature  
Storage temperature  
Note: 1. Value at TC = 25°C  
Pch*1  
Tch  
120  
W
°C  
°C  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
180  
80  
Max  
—
Unit  
W
Test conditions  
Power output  
Drain efficiency  
PO  
140  
—
VDD = 80 V, f = 28 MHz,  
IDQ = 0.1 A, Pin = 5 W  
ID = 10 mA, VGS = 0  
h
—
%
Drain to source breakdown  
voltage  
V(BR)DSS 180  
—
—
V
Gate to source breakdown  
voltage  
V(BR)GSS ±20  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source cutoff voltage  
Drain current  
VGS(off)  
IDSS  
0.5  
—
—
3.0  
1.0  
6.0  
V
ID = 1 mA, VDS = 10 V*1  
VDS = 140 V, VGS = 0  
ID = 4 A, VGS = 10 V*1  
—
mA  
V
Drain to source saturation  
voltage  
VDS(on)  
—
3.8  
Forward transfer admittance  
Input capacitance  
|yfs|  
0.9  
—
1.25  
440  
—
—
S
ID = 3 A, VDS = 20 V*1  
Ciss  
pF  
VGS = 5 V, VDS = 0,  
f = 1 MHz  
Output capacitance  
Coss  
—
75  
—
pF  
VGS = –5 V, VDS = 50 V,  
f = 1 MHz  
Reverse transfer capacitance  
Power output  
Crss  
PO  
—
—
—
0.5  
100  
17  
—
—
—
pF  
VGD = –50 V, f = 1 MHz  
VDD = 80 V, f = 28 MHz,  
WPEP  
dB  
Power gain  
PG  
Df = 20 kHz,  
IMD £ –30 dB  
Note: 1. Pulse Test  
CAUTION: OPERATING HAZARDS  
Beryllium Oxide Ceramics have been employed in these products.  
Since dust or fume of the material is highly poison to the human body, please do not treat them  
mechanically or chemically in the manner which might expose them to the air. And it should never be  
thrown out with general industrial or domestic waste.  
2
2SK410  
Figure 1 Power vs. Temperature Derating  
Figure 2 Maximum Safe Operation Area  
3
2SK410  
Figure 3 Typical Output Characteristics  
Figure 4 Typical Transfer Characteristics  
4
2SK410  
Figure 5 Forward Transfer Admittance vs. Drain Current  
Figure 6 Input Capacitance vs. Gate to Source Voltage  
5
2SK410  
Figure 7 Output Capacitance vs. Drain to Source Voltage  
Figure 8 Output Power, Drain Efficiency vs. Input Power  
6
2SK410  
Figure 9 Output Power vs. Input Power (2 Tones)  
Figure 10 Inter-Modulation Distortion vs. Output Power  
7
2SK410  
Figure 11 28 MHz Pout Test Circuit  
8
2SK410  
Package Dimensions  
Unit: mm  
9
2SK410  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or  
part of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or  
any other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the  
examples described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party  
or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products  
are requested to notify the relevant Hitachi sales offices when planning to use the products in  
MEDICAL APPLICATIONS.  
10  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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