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2SK2613

型号：

2SK2613

描述：

东芝场效应晶体管硅N沟道MOS型（ PIE - MOSIII ）[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII) ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

226 K

下载PDF手册
                                                        
                                                        
2SK2613  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)  
2SK2613  
Switching Regulator Applications, DC-DC Converter and  
Unit: mm  
Motor Drive Applications  
·
·
·
·
Low drain-source ON resistance: R  
= 1.4 Ω (typ.)  
DS (ON)  
High forward transfer admittance: ïY ï = 6.0 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 800 V)  
DS  
= 10 V, I = 1 mA)  
D
DSS  
Enhancement-model: V = 2.0~4.0 V (V  
th  
DS  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
1000  
1000  
±30  
8
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC  
(Note 1)  
I
D
1. GATE  
Drain current  
A
2. DRAIN (HEAT SINK)  
3. SOURSE  
Pulse (Note 1)  
I
24  
DP  
Drain power dissipation (Tc = 25°C)  
P
150  
W
D
AS  
AR  
Single pulse avalanche energy  
JEDEC  
JEITA  
―
―
E
910  
mJ  
(Note 2)  
Avalanche current  
I
8
15  
A
TOSHIBA  
2−16C1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
Weight: 4.6 g (typ.)  
ch  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
0.833  
50  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: V = 90 V, T = 25°C, L = 26.3 mH, R = 25 W, I = 8 A  
DD ch AR  
G
Note 3: Repetitive rating: Pulse width limited by max junction temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2002-08-09  
                                                                
                                                                
                                                                                                  
                                                                                                  
2SK2613  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±30 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
¾
±30  
¾
¾
¾
±10  
¾
mA  
V
GSS  
GS  
DS  
Drain-source breakdown voltage  
Drain cut-OFF current  
V
V
I = ±10 mA, V = 0 V  
G DS  
(BR) GSS  
I
V
= 800 V, V = 0 V  
GS  
¾
100  
¾
mA  
V
DSS  
DS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 10 mA, V  
= 0 V  
GS  
1000  
2.0  
¾
¾
(BR) DSS  
D
V
V
V
V
= 10 V, I = 1 mA  
¾
4.0  
1.7  
¾
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 4 A  
1.4  
6.0  
2000  
30  
W
S
DS (ON)  
D
ïY ï  
fs  
= 20 V, I = 4 A  
2.0  
¾
D
C
C
¾
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
¾
¾
DS  
rss  
C
oss  
¾
200  
¾
Rise time  
t
¾
¾
¾
20  
40  
30  
¾
¾
¾
r
10 V  
I = 4 A  
D
V
GS  
V
OUT  
0 V  
Turn-ON time  
t
on  
R
L
= 100 W  
Switching time  
Fall time  
t
f
~
-
V
400 V  
DD  
<
Duty 1%, t = 10 ms  
=
w
Turn-OFF time  
t
¾
¾
100  
65  
¾
off  
Total gate charge  
Q
¾
g
(gate-source plus gate-drain)  
~
-
V
400 V, V  
= 10 V, I = 8 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
Q
¾
¾
40  
25  
¾
¾
gs  
Gate-drain (“miller”) charge  
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
8
24  
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 8 A, V  
= 8 A, V  
= 0 V  
¾
-1.9  
¾
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
1600  
24  
ms  
mC  
rr  
dI /dt = 100 A/ms  
Q
¾
DR  
rr  
Marking  
※ Lot Number  
Type  
K2613  
Month (starting from alphabet A)  
※
Year  
(last number of the christian era)  
2
2002-08-09  
2SK2613  
I
– V  
I
– V  
D
DS  
D
DS  
10  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
15  
15  
10  
6.0  
10  
6.5  
5.75  
6.25  
6.0  
5.75  
5.5  
6
5.25  
4
5.5  
5.25  
5.0  
2
4
V
GS  
= 4.75 V  
V
GS  
= 5.0 V  
0
0
0
4
8
12  
16  
20  
0
20  
40  
60  
80  
100  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
– V  
V
– V  
DS GS  
D
GS  
20  
16  
12  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
Pulse test  
Common source  
= 20 V  
V
SD  
Pulse test  
I
= 8 A  
D
25  
4
2
4
4
100  
4
Tc = -55°C  
0
0
0
2
6
8
10  
0
4
8
12  
16  
20  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
(V)  
GS  
GS  
ïY ï - I  
fs  
D
100  
10  
1
Common source  
= 20 V  
V
SD  
Pulse test  
R
- I  
DS (ON)  
10  
Common source  
Tc = 25°C  
Pulse test  
5
3
25  
Tc = -55°C  
100  
V
GS  
= 10,15  
1
0.5  
0.3  
0.1  
0.1  
0.1  
0.3  
1
Drain current  
3
10  
30  
0.1  
1
10  
(A)  
100  
Drain current  
I
D
I
D
(A)  
3
2002-08-09  
2SK2613  
R
- Tc  
I
- V  
DR DS  
DS (ON)  
5
4
3
2
1
100  
10  
1
Common source  
= 10 V  
V
GS  
Pulse test  
I
= 8 A  
D
4
2
10  
0.1  
0
3
1
V
GS  
= 0, -1 V  
0
-80  
-40  
0
40  
80  
Tc (°C)  
160  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
(V)  
-1.2  
Case temperature  
Drain-source voltage  
V
DS  
Capacitance – V  
V
- Tc  
th  
DS  
10000  
5
4
3
2
1
0
Common source  
= 10 V  
V
DS  
I
= 1 mA  
D
C
iss  
Pulse test  
1000  
100  
10  
C
oss  
Common source  
VGS = 0 V  
f = 1 MHz  
Tc = 25°C  
C
rss  
0.1  
1
10  
100  
(V)  
1000  
Drain-source voltage  
V
DS  
-80  
-40  
0
40  
80  
120  
160  
Case temperature Tc (°C)  
Dynamic input/output characteristics  
P
- Tc  
D
200  
160  
120  
80  
500  
20  
Common source  
I
= 8 A  
D
Tc = 25°C  
Pulse test  
400  
300  
200  
100  
0
16  
12  
8
V
DS  
= 100 V  
V
DS  
200  
400  
V
GS  
40  
4
0
0
0
40  
80  
120  
160  
Tc (°C)  
200  
0
20  
40  
60  
80  
100  
Total gate charge  
Q
(nC)  
Case temperature  
g
4
2002-08-09  
2SK2613  
r
th  
- t  
w
10  
1
Duty = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
P
DM  
0.01  
Single pulse  
t
0.01  
T
Duty = t/T  
th (ch-c)  
R
= 0.833°C/W  
0.001  
10 m  
100 m  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
w
(S)  
Safe operating area  
E
– T  
AS  
ch  
100  
1000  
800  
600  
400  
200  
0
50  
30  
I
max (pulsed) *  
D
100 ms *  
1 ms *  
I
max (continuous)  
D
10  
5
3
DC Operation  
Tc = 25°C  
1
0.5  
0.3  
0.1  
*
Single nonrepetitive pulse  
0.05  
0.03  
Tc = 25°C  
Curves must be derated linearly  
with increase in temperature.  
V
DSS  
max  
25  
50  
75  
100  
125  
150  
0.01  
Channel temperature (initial) Tch (°C)  
1
3
10  
30  
100  
300 1000 3000 10000  
Drain-source voltage  
V
(V)  
DS  
B
VDSS  
15 V  
I
AR  
-15 V  
V
V
DS  
DD  
Test circuit  
Wave form  
æ
ö
÷
÷
ø
1
2
ç
B
VDSS  
VDSS  
R
V
= 25 W  
DD  
G
=
×L×I  
×
Ε
AS  
ç
2
-
= 90 V, L = 26.3 mH  
B
V
DD  
è
5
2002-08-09  
2SK2613  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2002-08-09  
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ETC

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ETC

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