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IXGH50N60B2

型号：

IXGH50N60B2

描述：

HiPerFASTTM IGBT B2级高速的IGBT[ HiPerFASTTM IGBT B2-Class High Speed IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

586 K

下载PDF手册
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
= 75 A  
IXGH 50N60B2  
IXGT 50N60B2  
B2-Class High Speed IGBTs  
VCE(sat) = 2.0 V  
tfityp = 65 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
TO-268  
(IXGT)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
75  
50  
200  
A
A
A
G
C (TAB)  
E
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600V  
ICM = 80  
A
PC  
TC = 25°C  
400  
W
G = Gate,  
C = Collector,  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
High frequency IGBT  
z
z
High current handling capability  
MOS Gate turn-on  
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
z
Switched-mode and resonant-mode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
power supplies  
z
AC motor speed control  
z
DC servo and robot drives  
z
DC choppers  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = V  
T = 25°C  
50  
1
µA  
VGE = 0CVES  
TJJ = 150°C  
mA  
Advantages  
z
High power density  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 40 A, VGE = 15 V  
100  
2.0  
nA  
z
Very fast switching speeds for high  
VCE(sat)  
1.6  
1.5  
V
V
frequency applications  
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99145A(03/04)  
IXGH 50N60B2  
IXGT 50N60B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 40 A; VCE = 10 V,  
40  
55  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
3500  
240  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
140  
23  
44  
nC  
nC  
nC  
e
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
A
td(on)  
tri  
td(off)  
tfi  
18  
25  
190  
65  
ns  
ns  
300 ns  
ns  
A12  
Inductive load, TJ = 25°C  
b
b
IC = 40 A, VGE = 15 V  
b12  
VCE = 480 V, RG = Roff = 5 Ω  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
Eoff  
0.55 0.85 mJ  
e
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
25  
0.45  
290  
140  
1.55  
ns  
ns  
mJ  
ns  
ns  
mJ  
L
.780 .800  
.177  
.140 .144  
L1  
Inductive load, TJ = 125°C  
IC = 40 A, VGE = 15 V  
VCE = 480 V, RG = Roff = 5 Ω  
∅P 3.55  
Q
R
S
3.65  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
Eoff  
TO-268 Outline  
RthJC  
RthCK  
0.31 K/W  
K/W  
(TO-247)  
0.25  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGH 50N60B2  
IXGT 50N60B2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
320  
280  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
9V  
VGE = 15V  
11V  
13V  
11V  
7V  
9V  
6V  
5V  
7V  
5V  
40  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
0
-50  
4
1
2
3
4
5
6
7
8
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
9V  
VGE = 15V  
11V  
IC = 80A  
7V  
6V  
IC = 40A  
IC = 20A  
5V  
1
1.5  
2
2.5  
3
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
TJ = 25ºC  
IC = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
60  
40  
-40ºC  
20  
0
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGH 50N60B2  
IXGT 50N60B2  
Fig. 8. Dependence of Turn-Off  
Energy on RG  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
4.5  
4
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
TJ = -40ºC  
25ºC  
125ºC  
IC = 80A  
3.5  
3
2.5  
2
IC = 40A  
1.5  
1
IC = 20A  
0.5  
0
0
20 40 60 80 100 120 140 160 180 200  
5
10  
15  
20  
25 30  
35  
40  
45  
50  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on IC  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
4
3.5  
3
4
3.5  
3
RG = 5Ω  
RG = 5Ω  
IC = 80A  
RG = 24.4 Ω  
VGE = 15V  
- - - -  
RG = 24.4Ω  
VGE = 15V  
VCE = 480V  
- - -  
VCE = 480V  
2.5  
2
2.5  
2
TJ = 125ºC  
IC = 40A  
1.5  
1
1.5  
1
TJ = 25ºC  
0.5  
0
0.5  
0
IC = 20A  
20  
30  
40  
50  
60  
70  
80  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on IC  
400  
350  
300  
250  
200  
150  
100  
50  
1000  
500  
td(off)  
td(off)  
tfi - - - - - -  
tfi - - - - - -  
RG = 5Ω  
TJ = 125ºC  
VGE = 15V  
V
GE = 15V  
VCE = 480V  
VCE = 480V  
TJ = 125ºC  
IC = 20A  
IC = 40A  
IC = 80A  
TJ = 25ºC  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGH 50N60B2  
IXGT 50N60B2  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Reverse-Bias  
Safe Operating Area  
350  
300  
250  
200  
150  
100  
50  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
td(off)  
tfi  
-
- - - - -  
RG = 5Ω  
V
GE = 15V  
VCE = 480V  
IC = 20A  
IC = 40A  
IC = 80A  
TJ = 125  
RG = 10Ω  
dV/dT < 10V/ns  
º
C
0
25 35 45 55 65 75 85 95 105 115 125  
100  
200  
300  
400  
500  
600  
TJ - Degrees Centigrade  
V C E - Volts  
Fig. 16. Capacitance  
Fig. 15. Gate Charge  
10000  
1000  
100  
16  
14  
12  
10  
8
VCE = 300V  
IC = 40A  
f = 1 MHz  
I
G = 10mA  
C
ies  
6
C
C
oes  
res  
4
2
0
10  
0
30  
60  
90  
120  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Q G - nanoCoulombs  
Fig. 17. Maximum Transient Thermal Resistance  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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