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2SK3079A

型号:

2SK3079A

描述:

东芝场效应晶体管硅N沟道MOS型[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

5 页

PDF大小:

116 K

2SK3079A  
Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK3079A  
470 MHz Band Amplifier Applications  
Unit: mm  
·
·
·
Output power: P = 33.50dBmW (2.2 W) (min)  
o
Gain: G = 13.50dB (min)  
p
Drain Efficiency: ηD = 50.0% (min)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Gate-source voltage  
Drain current  
V
V
10  
3
V
V
DSS  
GSS  
I
3
A
D
Power dissipation  
P
(Note 1)  
20.0  
150  
W
°C  
°C  
D
Channel temperature  
Storage temperature range  
T
ch  
T
45~150  
stg  
Note 1: Tc = 25°C  
JEDEC  
JEITA  
Marking  
TOSHIBA  
2-5N1A  
Type Name  
UD  
F
**  
Dot  
Lot No.  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Output power  
P
33.5  
50.0  
13.5  
¾
¾
¾
¾
0.8  
¾
¾
¾
¾
¾
¾
10  
5
dBmW  
%
O
V
= 4.5 V, Iidle = 50 mA  
DS  
(V  
= adjust)  
GS  
Drain efficiency  
η
D
f = 470 MHz, P = 20dBmW  
i
Z
= Z = 50 Ω  
L
G
Power gain  
G
dB  
p
Threshold voltage  
Drain cut-off current  
Gate-source leakage current  
V
V
V
V
V
= 4.5 V, I = 0.5 mA  
V
th  
DS  
DS  
GS  
DS  
D
I
I
= 10 V, V  
= 0 V  
GS  
¾
µA  
DSS  
GSS  
= 5 V, V = 0 V  
DS  
¾
µA  
= 5 V, f = 470 MHz,  
P = 20dBmW,  
i
Load mismatch  
(Note 2)  
¾
No degradation  
¾
P = 33.5dBmW (V  
= adjust)  
GS  
o
VSWR LOAD 10:1 all phase  
Caution: This is transistor the electrostatic sensitive device. Please handle with caution.  
Note 2: When the RF output power test fixture is used  
1
2002-01-09  
2SK3079A  
Test Circuit  
P
2200 pF  
2200 pF  
P
o
i
Z
= 50 W  
Z
= 50 W  
L
G
3.3 W  
L1  
2200 pF  
L2  
V
20 pF  
20 pF  
13 pF 20 pF  
10000 pF  
10 mF  
10000 pF  
680 kW  
V
GS  
DS  
2
2002-01-09  
2SK3079A  
P – P , G , hD  
Iidle – G , hD  
p
i
o
p
(f = 470 MHz, Iidle = 50 mA, V = 4.5 V, Tc = 25°C)  
(f = 470 MHz, P = 20dBmW, V = 4.5 V, Tc = 25°C)  
i ds  
ds  
40  
35  
30  
25  
20  
15  
10  
60  
50  
40  
30  
20  
10  
0
17  
16  
15  
14  
13  
60  
55  
50  
P
(dBmW)  
o
Gp (dB)  
hD (%)  
G
(dB)  
p
hD (%)  
0
10  
20  
30  
0
25  
50  
75  
100  
P
(dBmW)  
Iidle (mA)  
i
P – P  
P – Ids  
i
o
i
(f = 470 MHz, V = 4.5 V, Tc = 25°C)  
(f = 470 MHz, V = 4.5 V, Tc = 25°C)  
ds  
ds  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Iidle = 50 mA  
Iidle = 30 mA  
Iidle = 70 mA  
Iidle = 50 mA  
Iidle = 30 mA  
Iidle = 70 mA  
0
10  
20  
30  
0
10  
20  
30  
P
(dBmW)  
P
(dBmW)  
i
i
Vds – G , hD  
P – P  
i o  
p
(f = 470 MHz, P = 20dBmW, Iidle = 50 mA, Tc = 25°C)  
(f = 470 MHz, Iidle = 50 mA, Tc = 25°C)  
i
20  
18  
16  
14  
12  
10  
8
70  
68  
66  
64  
62  
60  
58  
56  
54  
52  
50  
40  
39  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
G
Eff  
p
6
Vdd = 4.5 V  
Vdd = 2.4 V  
Vdd = 3.6 V  
Vdd = 6.0 V  
4
2
0
0
2
4
6
8
0
0
20  
30  
Vds (V)  
P
(dBmW)  
i
3
2002-01-09  
2SK3079A  
P – Ids  
i
(f = 470 MHz, Iidle = 50 mA, Tc = 25°C)  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Vdd = 4.5 V  
Vdd = 2.4 V  
Vdd = 3.6 V  
Vdd = 6.0 V  
0
10  
20  
30  
P
(dBmW)  
i
Caution: These are typical curves and devices are not necessarily guaranteed at these curves.  
4
2002-01-09  
2SK3079A  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2002-01-09  
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