2SK3218-01
FUJI POWER MOSFET
Drain-source on-state resistance
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
RDS(on)=f(Tch):ID=20A,VGS=10V
120
100
80
60
40
20
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
typ.
max.
min.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25°C
100n
10n
1n
30
150
125
100
75
VDS
25
20
15
10
5
VGS
Vcc=120V
75V
30V
Ciss
50
Coss
Crss
25
0
200
100p
0
10-2
10-1
100
101
102
0
20
40
60
80
100 120
Qg [nC]
140
160 180
VDS [V]
Typical Switching Characteristics vs. ID
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80µs pulse test,Tch=25°C
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
104
103
102
101
100
90
80
70
60
50
40
30
20
10
0
td(off)
tf
tr
10V
5V
VGS=0V
1.0
td(on)
10-1
100
101
102
0.0
0.2
0.4
0.6
0.8
1.2
1.4
VSD [V]
ID [A]
3
