请登录

免费注册

购物车 0

上传BOM

产品分类

找货询价

QQ咨询

会员中心

购物车

技术支持

售后咨询

TDA 8922

型号：

TDA 8922

描述：

- 12号的铝制车身绘（ RAL 7032 ）

品牌：

NXP[ NXP ]

页数：

36 页

PDF大小：

748 K

下载PDF手册

INTEGRATED CIRCUITS

DATA SHEET

TDA8922

2 × 25 W class-D power amplifier

Objective speciﬁcation

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

CONTENTS

PACKAGE OUTLINE

SOLDERING

FEATURES

18.1

18.2

Introduction

APPLICATIONS

Through-hole mount packages

Soldering by dipping or by solder wave

Manual soldering

Surface mount packages

Reflow soldering

Wave soldering

Manual soldering

Suitability of IC packages for wave, reflow and

dipping soldering methods

GENERAL DESCRIPTION

QUICK REFERENCE DATA

ORDERING INFORMATION

BLOCK DIAGRAM

18.2.1

18.2.2

18.3

18.3.1

18.3.2

18.3.3

18.4

PINNING

FUNCTIONAL DESCRIPTION

8.1

General

DATA SHEET STATUS

DEFINITIONS

8.2

8.3

Pulse width modulation frequency

Protections

8.3.1

8.3.2

Overtemperature

Short-circuit across loudspeaker terminals and

to supply lines

DISCLAIMERS

8.3.3

8.3.4

8.4

Start-up safety test

Supply voltage alarm

Differential audio inputs

LIMITING VALUES

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

STATIC CHARACTERISTICS

SWITCHING CHARACTERISTICS

DYNAMICAC CHARACTERISTICS(STEREO

AND DUAL SE APPLICATION)

DYNAMIC AC CHARACTERISTICS (MONO

BTL APPLICATION)

APPLICATION INFORMATION

16.1

16.2

16.3

16.4

16.5

16.6

16.7

16.8

16.9

16.10

16.11

16.12

16.13

BTL application

Pin MODE

Output power estimation

External clock

Heatsink requirements

Output current limiting

Pumping effects

Reference design

PCB information for HSOP24 package

Classification

Bill of materials for reference design

Curves measured in reference design

Application schematics

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

FEATURES

APPLICATIONS

• High efficiency ( 90%)

• Television sets

• Operating supply voltage from ±12.5 to ±30 V

• Very low quiescent current

• Low distortion

• Home-sound sets

• Multimedia systems

• All mains fed audio systems

• Car audio (boosters).

• Usable as a stereo Single-Ended (SE) amplifier or as a

mono amplifier in Bridge-Tied Load (BTL)

• Fixed gain of 30 dB in Single-Ended (SE) and 36 dB in

Bridge-Tied Load (BTL)

GENERAL DESCRIPTION

The TDA8922 is a high efficiency class-D audio power

amplifier with very low dissipation. The typical output

power is 2 × 25 W.

• High output power

• Good ripple rejection

• Internal switching frequency can be overruled by an

external clock

The device is available in the HSOP24 power package

with a small internal heatsink and in the DBS23P

through-hole power package. Depending on the supply

voltage and load conditions, a very small or even no

external heatsink is required. The amplifier operates over

a wide supply voltage range from ±12.5 to ±30 V and

consumes a very low quiescent current.

• No switch-on or switch-off plop noise

• Short-circuit proof across load and to supply lines

• Electrostatic discharge protection

• Thermally protected.

QUICK REFERENCE DATA

SYMBOL

General; V_P= ±20 V

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V_P

supply voltage

±12.5 ±20

±30

I_q(tot)

total quiescent supply no load connected

current

−

efﬁciency

P_o= 25 W; SE: R_L= 2 × 8 Ω; f_i= 1 kHz

−

Stereo single-ended conﬁguration

P_ooutput power

R_L= 8 Ω; THD = 10%; V_P= ±20 V; note 1 22

R_L= 4 Ω; THD = 10%; V_P= ±15 V; note 1 22

−

Mono bridge-tied load conﬁguration

P_o

output power

R_L= 8 Ω; THD = 10%; V_P= ±15 V; note 1 46

−

Note

1. See Section 16.5.

ORDERING INFORMATION

TYPE

PACKAGE

NUMBER

NAME

DESCRIPTION

VERSION

TDA8922TH

HSOP24

DBS23P

plastic, heatsink small outline package; 24 leads;

low stand-off height

SOT566-3

TDA8922J

plastic DIL-bent-SIL power package; 23 leads

(straight lead length 3.2 mm)

SOT411-1

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

BLOCK DIAGRAM

handbook, full pagewidth

STABI PROT

DDP2

23 (16)

DDP1

DDA2

3 (20)

DDA1

10 (4)

18 (12)

13 (7)

14 (8)

15 (9)

BOOT1

RELEASE1

SWITCH1

ENABLE1

9 (3)

8 (2)

IN1−

IN1+

DRIVER

HIGH

PWM

MODULATOR

INPUT

STAGE

CONTROL

AND

HANDSHAKE

16 (10)

OUT1

DRIVER

LOW

mute

11 (5)

7 (1)

SGND1

OSC

STABI

SSP1

TDA8922TH

(TDA8922J)

TEMPERATURE SENSOR

CURRENT PROTECTION

OSCILLATOR

MANAGER

6 (23)

DDP2

MODE

mute

22 (15)

BOOT2

2 (19)

SGND2

ENABLE2

DRIVER

HIGH

CONTROL

AND

HANDSHAKE

21 (14)

OUT2

5 (22)

4 (21)

SWITCH2

IN2+

IN2−

INPUT

STAGE

PWM

MODULATOR

DRIVER

LOW

RELEASE2

1 (18)

12 (6)

SSA1

24 (17)

19 (-)

(1)

17 (11)

20 (13)

SSP1

SSA2

SSD

SSP2

MGU994

(1) Pin HW (TDA8922TH only) should be connected to pin V_SSDin the application.

Pin numbers in parenthesis refer to the TDA8922J.

Fig.1 Block diagram.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

PINNING

SYMBOL

TDA8922TH

DESCRIPTION

TDA8922J

V_SSA2

negative analog supply voltage for channel 2

signal ground for channel 2

SGND2

V_DDA2

IN2−

positive analog supply voltage for channel 2

negative audio input for channel 2

IN2+

positive audio input for channel 2

MODE

OSC

mode selection input: standby, mute or operating

oscillator frequency adjustment or tracking input

positive audio input for channel 1

IN1+

IN1−

negative audio input for channel 1

V_DDA1

SGND1

V_SSA1

PROT

V_DDP1

BOOT1

OUT1

V_SSP1

STABI

positive analog supply voltage for channel 1

signal ground for channel 1

negative analog supply voltage for channel 1

time constant capacitor for protection delay

positive power supply voltage for channel 1

bootstrap capacitor for channel 1

−

PWM output from channel 1

negative power supply voltage for channel 1

decoupling of internal stabilizer for logic supply

handle wafer; must be connected to pin V_SSD

negative power supply voltage for channel 2

PWM output from channel 2

V_SSP2

OUT2

BOOT2

V_DDP2

V_SSD

bootstrap capacitor for channel 2

positive power supply voltage for channel 2

negative digital supply voltage

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

handbook, halfpage

OSC

IN1+

IN1−

DDA1

SGND1

SSA1

handbook, halfpage

PROT

SSD

SSA2

SGND2

DDP1

DDP2

BOOT1

OUT1

BOOT2 22

OUT2 21

DDA2

IN2−

IN2+

MODE

OSC

IN1+

IN1−

SSP1

SSP2

STABI

HW 19

TDA8922J

TDA8922TH

STABI 18

SSP2

OUT2

SSP1

BOOT2

OUT1 16

BOOT1 15

DDP2

DDA1

11 SGND1

SSD

DDP1

PROT 13

SSA2

SSA1

MGU995

SGND2 19

DDA2

IN2− 21

IN2+ 22

MODE

MGU996

Fig.2 Pin configuration TDA8922TH.

Fig.3 Pin configuration TDA8922J.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

FUNCTIONAL DESCRIPTION

General

The amplifier system can be switched in three operating

modes with pin MODE:

8.1

• Standby mode; with a very low supply current

The TDA8922 is a two channel audio power amplifier using

class-D technology. A detailed application reference

design is shown in Fig.10. Typical application schematics

are shown in Figs 37 and 38.

• Mute mode; the amplifiers are operational, but the audio

signal at the output is suppressed

• Operating mode; the amplifiers fully are operational with

output signal.

The audio input signal is converted into a digital Pulse

Width Modulated (PWM) signal via an analog input stage

and PWM modulator. To enable the output power

transistors to be driven, this digital PWM signal is applied

to a control and handshake block and driver circuits for

both the high side and low side. In this way a level shift is

performed from the low power digital PWM signal

(at logic levels) to a high power PWM signal which

switches between the main supply lines.

An example of a switching circuit for driving pin MODE is

illustrated in Fig.4.

For suppressing plop noise, the amplifier will remain

automatically in the mute mode for approximately 150 ms

before switching to the operating mode (see Fig.5).

During this time, the coupling capacitors at the input are

fully charged.

A 2nd-order low-pass filter converts the PWM signal to an

analog audio signal across the loudspeakers.

The TDA8922 one-chip class-D amplifier contains high

power D-MOS switches, drivers, timing and handshaking

between the power switches and some control logic. For

protection a temperature sensor and a maximum current

detector are built-in.

+5 V

handbook, halfpage

standby/

mute/on

mute

The two audio channels of the TDA8922 contain two

PWMs, two analog feedback loops and two differential

input stages. It also contains circuits common to both

channels such as the oscillator, all reference sources, the

mode functionality and a digital timing manager.

MODE pin

SGND

MBL463

The TDA8922 contains two independent amplifier

channels with high output power, high efficiency (90%),

low distortion and a low quiescent current. The amplifier

channels can be connected in the following configurations:

• Mono Bridge-Tied Load (BTL) amplifier

• Stereo Single-Ended (SE) amplifiers.

Fig.4 Example of mode selection circuit.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

audio

handbook, full pagewidth

switching

mode

operating

4 V

mute

2 V

standby

0 V (SGND)

time

100 ms

>50 ms

audio

switching

mode

operating

4 V

standby

0 V (SGND)

time

100 ms

50 ms

MBL465

When switching from standby to mute, there is a delay of 100 ms before the output starts switching. The audio signal is available after V_modehas been

set to operating, but not earlier than 150 ms after switching to mute.

When switching from standby to operating, there is a first delay of 100 ms before the outputs starts switching. The audio signal is available after a

second delay of 50 ms.

Fig.5 Timing on mode selection input.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

8.2

Pulse width modulation frequency

8.3.2

SHORT-CIRCUIT ACROSS LOUDSPEAKER TERMINALS

AND TO SUPPLY LINES

The output signal of the amplifier is a PWM signal with a

carrier frequency of approximately 350 kHz. Using a

2nd-order LC demodulation filter in the application results

in an analog audio signal across the loudspeaker.

This switching frequency is fixed by an external resistor

When the loudspeaker terminals are short-circuited or if

one of the demodulated outputs of the amplifier is

short-circuited to one of the supply lines, this will be

detected by the current protection. If the output current

exceeds the maximum output current of 4 A, then the

power stage will shut down within less than 1 µs and the

high current will be switched off. In this state the

dissipation is very low. Every 100 ms the system tries to

restart again. If there is still a short-circuit across the

loudspeaker load or to one of the supply lines, the system

is switched off again as soon as the maximum current is

exceeded. The average dissipation will be low because of

this low duty cycle.

R_OSCconnected between pin OSC and V_SSA. With the

resistor value given in the schematic diagram of the

reference design, the carrier frequency is typical 350 kHz.

The carrier frequency can be calculated using the

9 × 10⁹

R_OSC

following equation: f_osc

------------------

If two or more class-D amplifiers are used in the same

audio application, it is advisable to have all devices

operating at the same switching frequency.

8.3.3

START-UP SAFETY TEST

This can be realized by connecting all OSC pins together

and feed them from a external central oscillator. Using an

external oscillator it is necessary to force pin OSC to a

DC-level above SGND for switching from the internal to an

external oscillator. In this case the internal oscillator is

disabled and the PWM will be switched on the external

frequency. The frequency range of the external oscillator

must be in the range as specified in the switching

characteristics; see Chapter 13.

During the start-up sequence, when pin MODE is switched

from standby to mute, the conditions at the output

terminals of the power stage are checked. In the event of

a short-circuit at one of the output terminals to V_DDor V_SS

the start-up procedure is interrupted and the systems waits

for open-circuit outputs. Because the test is done before

enabling the power stages, no large currents will flow in the

event of a short-circuit. This system protects for

short-circuits at both sides of the output filter to both supply

lines. When there is a short-circuit from the power PWM

output of the power stage to one of the supply lines (before

the demodulation filter) it will also be detected by the

start-up safety test. Practical use of this test feature can be

found in detection of short-circuits on the printed-circuit

board.

In an application circuit:

• Internal oscillator: R_OSCconnected between pin OSC

and V_SSA

• External oscillator: connect the oscillator signal between

pins OSC and SGND; delete R_OSCand C_OSC

8.3 Protections

Remark: This test is only operational prior to or during the

start-up sequence, and not during normal operation.

Temperature, supply voltage and short-circuit protections

sensors are included on the chip. In the event that the

maximum current or maximum temperature is exceeded

the system will shut down.

During normal operation the maximum current protection

is used to detect short-circuits across the load and with

respect to the supply lines.

8.3.1

OVERTEMPERATURE

If the junction temperature T_j> 150 °C, then the power

stage will shut down immediately. The power stage will

start switching again if the temperature drops to

approximately 130 °C, thus there is a hysteresis of

approximately 20 °C.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

8.3.4

SUPPLY VOLTAGE ALARM

8.4

Differential audio inputs

If the supply voltage drops below ±12.5 V, the

For a high common mode rejection ratio and a maximum

of flexibility in the application, the audio inputs are fully

differential. By connecting the inputs anti-parallel the

phase of one of the channels can be inverted, so that a

load can be connected between the two output filters.

In this case the system operates as a mono BTL amplifier

and with the same loudspeaker impedance an

approximately four times higher output power can be

obtained.

undervoltage protection circuit is activated and the system

will shut down correctly. If the internal clock is used, this

switch-off will be silent and without plop noise. When the

supply voltage rises above the threshold level, the system

is restarted again after 100 ms. If the supply voltage

exceeds ±32 V the overvoltage protection circuit is

activated and the power stages will shut down. They are

re-enabled as soon as the supply voltage drops below the

threshold level.

The input configuration for a mono BTL application is

illustrated in Fig.6; for more information see Chapter 16.

An additional balance protection circuit compares the

positive (V_DD) and the negative (V_SS) supply voltages and

is triggered if the voltage difference between them

exceeds a certain level. This level depends on the sum of

both supply voltages. An expression for the unbalanced

threshold level is as follows: V_th(unb)≈ 0.15 × (V_DD+ V_SS).

In the stereo single-ended configuration it is also

recommended to connect the two differential inputs in

anti-phase. This has advantages for the current handling

of the power supply at low signal frequencies.

Example: With a symmetrical supply of ±30 V, the

protection circuit will be triggered if the unbalance exceeds

approximately 9 V; see Section 16.7.

handbook, full pagewidth

OUT1

IN1+

IN1−

SGND

OUT2

IN2+

IN2−

power stage

MBL466

Fig.6 Input configuration for mono BTL application.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_P

V_MODE

V_sc

I_ORM

T_stg

PARAMETER

CONDITIONS

MIN.

MAX.

±30

UNIT

supply voltage

−

input voltage on pin MODE

short-circuit voltage on output pins

repetitive peak current in output pin

storage temperature

with respect to SGND

note 1

5.5

±30

−55

−40

−

+150

+85

150

°C

T_amb

T_vj

ambient temperature

virtual junction temperature

Notes

1. See Section 16.6.

10 THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_th(j-a)

thermal resistance from junction to ambient

in free air; note 1

TDA8922TH

K/W

TDA8922J

R_th(j-c)

thermal resistance from junction to case

TDA8922TH

note 1

1.3

K/W

TDA8922J

Note

1. See Section 16.5.

11 QUALITY SPECIFICATION

In accordance with “General Quality Specification for Integrated Circuits: SNW-FQ-611D” if this device is used as an

audio amplifier.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

12 STATIC CHARACTERISTICS

V_P= ±25 V; T_amb= 25 °C; measured in Fig.10; unless otherwise speciﬁed.

SYMBOL

Supply

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V_P

supply voltage

note 1

±12.5 ±20

±30

I_q(tot)

I_stb

total quiescent supply current

standby supply current

no load connected

−

µA

100

500

Mode select input; pin MODE

V_MODE

I_MODE

V_stb

input voltage

note 2

−

5.5

input current

V_MODE= 5.5 V

notes 2 and 3

−

1000 µA

input voltage for standby mode

input voltage for mute mode

input voltage for operating mode

0.8

3.0

5.5

V_mute

V_on

2.2

4.2

Audio inputs; pins IN1−, IN1+, IN2+ and IN2−

V_IDC input voltage

Ampliﬁer outputs; pins OUT1 and OUT2

note 2

−

V_OO(SE)

output offset voltage

SE; operating and mute

SE; operating ↔ mute

BTL; operating and mute

BTL; operating ↔ mute

−

150

∆V_OO(SE)

V_OO(BTL)

∆V_OO(BTL)

variation of output offset voltage

output offset voltage

215

115

variation of output offset voltage

Stabilizer output; pin STABI

V_o(stab)

stabilizer output voltage

mute and operating; note 4

Temperature protection

T_prot

T_hys

temperature protection activation

150

−

°C

hysteresis on temperature

protection

−

Notes

1. The circuit is DC adjusted at V_P= ±12.5 to ±30 V.

2. With respect to SGND (0 V).

3. The transition regions between standby, mute and operating mode contain hysteresis (see Fig.7).

4. With respect to V_SSP1

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MBL467

handbook, full pagewidth

STBY

MUTE

0.8

2.2

3.0

4.2

5.5

(V)

MODE

Fig.7 Behaviour of mode selection pin MODE.

13 SWITCHING CHARACTERISTICS

V_DD= ±25 V; T_amb= 25 °C; measured in Fig.10; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Internal oscillator

f_osc

typical internal oscillator

frequency

R_OSC= 30.0 kΩ

290

210

317

344

600

kHz

f_osc(int)

internal oscillator

frequency range

note 1

−

External oscillator or frequency tracking

V_OSC

voltage on pin OSC

SGND + 4.5 SGND + 5

SGND + 6

V_OSC(trip)

trip level for tracking on

pin OSC

−

SGND + 2.5

−

f_track

frequency range for

tracking

210

−

600

kHz

V_P(OSC)(ext)minimum symmetrical

supply voltage for external

oscillator application

−

Note

1. Frequency set with R_OSCaccording to the formula in Section 8.2.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

14 DYNAMIC AC CHARACTERISTICS (STEREO AND DUAL SE APPLICATION)

V_P= ±20 V; R_L= 8 Ω; f_i= 1 kHz; f_osc= 310 kHz; R_sL< 0.1 Ω (note 1); T_amb= 25 °C; measured in Fig.10; unless

otherwise speciﬁed.

SYMBOL

PARAMETER

output power

CONDITIONS

MIN.

TYP. MAX. UNIT

P_o

R_L= 8 Ω; V_P= ±20 V; note 2

THD = 0.5%

−

THD = 10%

R_L= 8 Ω; V_P= ±25 V; note 2

THD = 0.5%

−

THD = 10%

R_L= 4 Ω; V_P= ±15 V; note 2

THD = 0.5%

−

THD = 10%

THD

total harmonic distortion

P_o= 1 W; note 3

f_i= 1 kHz

−

0.02

0.15

0.05

−

f_i= 10 kHz

−

G_v(cl)

closed loop voltage gain

efﬁciency

−

P_o= 25 W; f_i= 1 kHz; note 4

operating; note 5

SVRR

supply voltage ripple rejection

f_i= 100 Hz

−

kΩ

f_i= 1 kHz

−

mute; f_i= 100 Hz; note 5

standby; f_i= 100 Hz; note 5

−

Z_i

input impedance

V_n(o)

noise output voltage

operating

R_s= 0 Ω; note 6

R_s= 10 kΩ; note 7

mute; note 8

note 9

−

200

230

220

−

400

−

µV

−

α_cs

channel separation

−

∆G_v

channel unbalance

V_o(mute)

CMRR

output signal in mute

common mode rejection ratio

note 10

−

400

−

V_i(CM)= 1 V (RMS)

Notes

1. R_sLis the series resistance of inductor of low-pass LC filter in the application.

2. Output power is measured indirectly; based on R_DSonmeasurement.

3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using a lower

order low-pass filter a significantly higher value is found, due to the switching frequency outside the audio band.

Maximum limit is guaranteed but may not be 100% tested.

4. Output power measured across the loudspeaker load.

5. V_ripple= V_ripple(max)= 2 V (p-p); R_s= 0 Ω.

6. B = 22 Hz to 22 kHz; R_s= 0 Ω; maximum limit is guaranteed, but may not be 100% tested.

7. B = 22 Hz to 22 kHz; R_s= 10 kΩ.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

8. B = 22 Hz to 22 kHz; independent of R_s.

9. P_o= 1 W; R_s= 0 Ω; f_i= 1 kHz.

10. V_i= V_i(max)= 1 V (RMS); maximum limit is guaranteed, but may not be 100% tested.

15 DYNAMIC AC CHARACTERISTICS (MONO BTL APPLICATION)

V_P= ±15 V; R_L= 8 Ω; f_i= 1 kHz; f_osc= 310 kHz; R_sL< 0.1 Ω (note 1); T_amb= 25 °C; measured in Fig.10; unless

otherwise speciﬁed.

SYMBOL

PARAMETER

output power

CONDITIONS

MIN.

TYP. MAX. UNIT

P_o

R_L= 8 Ω; V_P= ±15 V; note 2

THD = 0.5%

−

THD = 10%

THD

total harmonic distortion

P_o= 1 W; note 3

f_i= 1 kHz

−

0.015 0.05

f_i= 10 kHz

−

0.02

−

G_v(cl)

closed loop voltage gain

efﬁciency

−

P_o= 50 W; f_i= 1 kHz; note 4

operating; note 5

SVRR

supply voltage ripple rejection

f_i= 100 Hz

−

kΩ

f_i= 1 kHz

−

mute; f_i= 100 Hz; note 5

standby; f_i= 100 Hz; note 5

−

Z_i

input impedance

V_n(o)

noise output voltage

operating

R_s= 0 Ω; note 6

R_s= 10 kΩ; note 7

mute; note 8

note 9

−

280

300

280

−

560

−

µV

−

V_o(mute)

CMRR

output signal in mute

500

−

common mode rejection ratio

V_i(CM)= 1 V (RMS)

Notes

1. R_sLis the series resistance of inductor of low-pass LC filter in the application.

2. Output power is measured indirectly; based on R_DSonmeasurement.

3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using a low

order low-pass filter a significant higher value will be found, due to the switching frequency outside the audio band.

Maximum limit is guaranteed but may not be 100% tested.

4. Output power measured across the loudspeaker load.

5. V_ripple= V_ripple(max)= 2 V (p-p); R_s= 0 Ω.

6. B = 22 Hz to 22 kHz; R_s= 0 Ω; maximum limit is guaranteed, but may not be 100% tested.

7. B = 22 Hz to 22 kHz; R_s= 10 kΩ.

8. B = 22 Hz to 22 kHz; independent of R_s.

9. V_i= V_i(max)= 1 V (RMS); f_i= 1 kHz; maximum limit is guaranteed, but may not be 100% tested.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

16 APPLICATION INFORMATION

16.1 BTL application

R_L

× 2V × (1 – t_min× f_osc

)

---------------------

R_L+ 1.2

BTL:

P _o(1%)

---------------------------------------------------------------------------------------------

2 × R_L

When using the power amplifier in a mono BTL application

(for more output power), the inputs of both channels must

be connected in parallel and the phase of one of the inputs

must be inverted (see Fig.6). In principle the loudspeaker

can be connected between the outputs of the two

single-ended demodulation filters.

Maximum current:

2V_P× (1 – t_min× f_osc

)

I _o(peak)

should not exceed 4 A.

--------------------------------------------------------

R_L+ 1.2

Legend:

16.2 Pin MODE

R_L= load impedance

For correct operation the switching voltage at pin MODE

should be debounced. If pin MODE is driven by a

mechanical switch an appropriate debouncing low-pass

filter should be used. If pin MODE is driven by an

electronic circuit or microcontroller then it should remain at

the mute voltage level for at least 100 ms before switching

back to the standby voltage level.

f_osc= oscillator frequency

t_min= minimum pulse width (typical 190 ns)

V_P= single-sided supply voltage (so, if supply is ±30 V

symmetrical, then V_P= 30 V)

P_o(1%)= output power just at clipping

P_o(10%)= output power at THD = 10%

P_o(10%)= 1.25 × P_o(1%)

16.3 Output power estimation

The output power in several applications (SE and BTL)

can be estimated using the following expressions:

16.4 External clock

The minimum required symmetrical supply voltage for

external clock application is ±15 V (equally, the minimum

asymmetrical supply voltage for applications with an

external clock is 30 V).

R_L

× V × (1 – t_min× f_osc

)

---------------------

R_L+ 0.6

SE: P_o(1%)

-----------------------------------------------------------------------------------------

2 × R_L

When using an external clock the following accuracy of the

duty cycle of the external clock has to be taken into

account: 47.5% < δ < 52.5%.

Maximum current:

V_P× (1 – t_min× f_osc

)

I _o(peak)

should not exceed 4 A.

-----------------------------------------------------

R_L+ 0.6

A possible solution for an external clock oscillator circuit is

illustrated in Fig.8.

handbook, full pagewidth

DDA

2 kΩ

ASTAB−

ASTAB+

−TRIGGER

0−

360 kHz 320 kHz

CTC

RTC

HOP

4.3 V

120 pF

220

HEF4047BT

5.6 V

9.1 kΩ

RCTC

+TRIGGER MR

RETRIGGER

GND

CLOCK

MBL468

Fig.8 External oscillator circuit.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

16.5 Heatsink requirements

In some applications it may be necessary to connect an

external heatsink to the TDA8922. The determining factor

is the 150 °C maximum junction temperature T_j(max)which

cannot be exceeded. The expression below shows the

relationship between the maximum allowable power

dissipation and the total thermal resistance from junction

to ambient:

MBL469

handbook, halfpage

diss

(W)

(1)

T_j(max)– T_amb

-----------------------------------

P_diss

R_th(j-a)

(2)

(3)

(4)

P_dissis determined by the efficiency (η) of the TDA8922.

The efficiency measured in the TDA8922 as a function of

output power is given in Fig.19. The power dissipation can

be derived as function of output power (see Fig.18).

(5)

100

(°C)

The derating curves (given for several values of the R_th(j-a)

are illustrated in Fig.9. A maximum junction temperature

)

amb

T_j= 150 °C is taken into account. From Fig.9 the maximum

allowable power dissipation for a given heatsink size can

be derived or the required heatsink size can be determined

at a required dissipation level.

(1) R_th(j-a)= 5 K/W.

(2) R_th(j-a)= 10 K/W.

(3)

R_th(j-a)= 15 K/W.

(4) R_th(j-a)= 20 K/W.

(5) R_th(j-a)= 35 K/W.

Example 1:

P_o= 2 × 25 W into 8 Ω

T_j(max)= 150 °C

Fig.9 Derating curves for power dissipation as a

function of maximum ambient temperature.

T_amb= 60 °C

P_diss(tot)= 4.2 W (from Fig.18)

The required R_th(j-a)= 21.4 K/W can be calculated.

16.6 Output current limiting

The R_th(j-a)of the TDA8922 in free air is 35 K/W; the R_th(j-c)

of the TDA8922 is 1.3 K/W, thus a heatsink of 20.1 K/W is

required for this example.

To guarantee the robustness of the class-D amplifier the

maximum output current which can be delivered by the

output stage is limited. An overcurrent protection is

included for each output power switch. When the current

flowing through any of the power switches exceeds a

defined internal threshold (e.g. in case of a short-circuit to

the supply lines or a short-circuit across the load), the

amplifier will shut down immediately and an internal timer

will be started. After a fixed time (e.g. 100 ms) the amplifier

is switched on again. If the requested output current is still

too high the amplifier will switch-off again. Thus the

amplifier will try to switch to the operating mode every

100 ms. The average dissipation will be low in this

situation because of this low duty cycle. If the overcurrent

condition is removed the amplifier will remain operating.

In actual applications, other factors such as the average

power dissipation with music source (as opposed to a

continuous sine wave) will determine the size of the

heatsink required.

Example 2:

P_o= 2 × 25 W into 4 Ω

T_j(max)= 150 °C

T_amb= 60 °C

P_diss(tot)= 5.5 W (from Fig.18)

The required R_th(j-a)= 16.4 K/W.

Because the duty cycle is low the amplifier will be switched

off for a relatively long period of time which will be noticed

as a so-called audio-hole; an audible interruption in the

output signal.

The R_th(j-a)of the TDA8922 in free air is 35 K/W; the R_th(j-c)

of the TDA8922 is 1.3 K/W, thus a heatsink of 15.1 K/W is

required for this example.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

To trigger the maximum current protection in the

TDA8922, the required output current must exceed 4 A.

This situation occurs in case of:

16.7 Pumping effects

The TDA8922 class-D amplifier is supplied by a

symmetrical voltage (e.g V_DD= +25 V and V_SS= −25 V).

When the amplifier is used in a SE configuration, a

so-called ‘pumping effect’ can occur. During one switching

interval, energy is taken from one supply (e.g. V_DD), while

a part of that energy is delivered back to the other supply

line (e.g. V_SS) and visa versa. When the voltage supply

source cannot sink energy, the voltage across the output

capacitors of that voltage supply source will increase:

the supply voltage is pumped to higher levels. The voltage

increase caused by the pumping effect depends on:

• Short-circuits from any output terminal to the supply

lines (V_DDor V_SS

)

• Short-circuit across the load or speaker impedances or

a load impedance below the specified values of

4 and 8 Ω.

Even if load impedances are connected to the amplifier

outputs which have an impedance rating of 4 Ω, this

impedance can be lower due to the frequency

characteristic of the loudspeaker; practical loudspeaker

impedances can be modelled as an RLC network which

will have a specific frequency characteristic: the

• Speaker impedance

• Supply voltage

impedance at the output of the amplifier will vary with the

input frequency. A high supply voltage in combination with

a low impedance will result in large current requirements.

• Audio signal frequency

• Capacitor value present on supply lines

• Source and sink currents of other channels.

Another factor which must be taken into account is the

ripple current which will also flow through the output power

switches. This ripple current depends on the inductor

values which are used, supply voltage, oscillator

frequency, duty factor and minimum pulse width. The

maximum available output current to drive the load

impedance can be calculated by subtracting the ripple

current from the maximum repetitive peak current in the

output pin, which is 4 A for the TDA8922.

The pumping effect should not cause a malfunction of

either the audio amplifier and/or the voltage supply source.

For instance, this malfunction can be caused by triggering

of the undervoltage or overvoltage protection or unbalance

protection of the amplifier.

See the application notes (tbf) for a more detailed

description of the implications of output current limiting.

16.8 Reference design

As a rule of thumb the following expressions can be used

to determine the minimum allowed load impedance

without generating audio holes:

The reference design for a single-chip class-D audio

amplifier using the TDA8922TH is illustrated in Fig.10.

The Printed-Circuit Board (PCB) layout is shown in Fig.11.

The Bill Of Materials (BOM) is given in Table 1.

V_P× (1 – t_min× f_osc

)

Z ≥

– 0.6 for SE application.

-----------------------------------------------------

_ORM– I_ripple

16.9 PCB information for HSOP24 package

2V_P× (1 – t_min× f_osc

)

Z ≥

– 1.2 for BTL application.

--------------------------------------------------------

The size of the PCB is 74.3 × 59.10 mm, dual sided 35 µm

_ORM– I_ripple

copper with 121 metallized through holes.

Where:

The standard configuration has a symmetrical supply

(typical ±20 V) with stereo SE outputs (typical 2 × 8 Ω).

The PCB is also suitable for a mono BTL configuration

(1 × 8 Ω) with symmetrical and asymmetrical supply.

Z_L= load impedance

f_osc= oscillator frequency

t_min= minimum pulse width (typical 190 ns)

It is possible to use several different output filter inductors

such as 16RHBP or EP13 types to evaluate the

performance against the price or size.

V_P= single-sided supply voltage

(so, if the supply is ±30 V symmetrical, then V_P= 30 V)

I_ORM= maximum repetitive peak current in output pin;

see also Chapter 9

16.10 Classiﬁcation

I_ripple= ripple current.

The application shows optimized signal and EMI

performance.

See the application notes (tbf) for a more detailed

description of the implications of output current limiting.

2003 Mar 20

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in

white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

egwidht

BEAD

25 V

DDP

SSP

470 µF

(3)

100 nF

10 kΩ

47 µF

GND

(3)

BEAD

100 nF

470 µF

DDA

9.1 kΩ

39 kΩ

−

25 V

BEAD

R4 39 kΩ

DDA

47 µF

mute

off

5.6 V

220 nF

BEAD

47 µF

SSA

DDA

SSA

C12

DDP

SSP

C15

220 nF 100 nF

220 nF

30 kΩ

C10

100 nF

C11

C13

100 nF

C14

220 nF 100 nF

SSP1

C16

DDA1

SSA1

OSC

MODE

DDP1

5.6 kΩ 470 nF

C24

560 pF

−

IN1

C28

220 nF

in 1

SGND

BOOT1

C26

470 nF

C20

330 pF

5.6 kΩ

−

OUT1

C22

15 nF

IN1

R10

4.7 Ω

R12

22 Ω

C30

15 nF

SE 4 Ω

C17

470 nF

OUT1

SGND1

SGND2

OUT1

(2)

SGND

27 µH

(1)

BTL 8 Ω

SE 4 Ω

TDA8922TH

(4)

27 µH

OUT2

C18

470 nF

C31

15 nF

C23

15 nF

IN2

R13

22 Ω

R11

4.7 Ω

5.6 kΩ

C21

330 pF

BOOT2

C27

470 nF

OUT2

C29

220 nF

−

SGND

C25

560 pF

in 2

STABI

C33

47 pF

C19

PROT HW

SSP2

5.6 kΩ 470 nF

SSA2

DDA2

SSD

C32

220 nF

DDP2

C38

MGU997

C34

C37

C35

C36

C39

100 nF

220 nF

100 nF

SSP

SSA

DDA

DDP

Every decoupling to ground (plane) must be made as close as possible to the pin.

(1) BTL: remove In2, R8, R9, C18, C19, C21 and close J3 and J4.

To handle 20 Hz under all conditions in stereo SE mode, the external power supply

(2) BTL: connect loudspeaker between OUT1+ and OUT2−.

needs to have a capacitance of at least 4700 µF per supply line; V_P= ±27 V (max).

(3) BTL: R1 and R2 are only required when an asymmetrical supply is used (V_SS= 0 V).

(4) In case of hum, close J1 and J2.

Fig.10 Single-chip class-D audio amplifier application diagram (reference design for SE and BTL).

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

bnok,lfuapgedwith

PCB version 4

1-2002

C35

C21

C38

C20

C11

C14

C33

C17 C16 C18

L3 L1 L2 L4

C27

C26

C19

Off

−

Out1 V

Out2

GND V

TDA8920/21/22/23/24TH

state of D art

In1

In2

Top silk screen

Top copper

C25

C34

R11

R10

C37

C39

C23

C22

C36

C10

C32

C15

C13

C12

C24

R9 R7

C30

C31

R12

R13

R2 R1

C28 C29

PHILIPS SEMICONDUCTORS

Bottom silk screen

MBL496

Bottom copper

Fig.11 Printed-circuit board layout for the TDA8922TH.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

16.11 Bill of materials for reference design

Table 1 Single-chip class-D audio ampliﬁer printed-circuit board (PCB version 4; 1-2002) for TDA8922TH

(see Figs 10 and 11).

BOM ITEM QUANTITY

REFERENCE

PART

TDA8922TH

DESCRIPTION

Philips Semiconductors B.V.

Farnell 152-396

in1 and in2

cinch inputs

output connector

supply connector

27 µH

out1 and out2

Augat 5KEV-02

_DD, GND and V_SS

Augat 5KEV-03

L6 and L5

L1, L2, L3 and L4

EP13 or 16RHBP

BEAD

Murata BL01RN1-A62

Knitter ATE1E M-O-M

BZX 79C5V6 DO-35

PCB switch

5V6

C1 and C2

470 µF; 35 V

Panasonic M series

ECA1VM471

C3, C4 and C5

47 µF; 63 V

Panasonic NHG series

ECA1JHG470

C16, C17, C18, C19, C26 and 470 nF; 63 V

C27

MKT EPCOS B32529-C474-K

C8, C9, C11, C14, C28, C29, 220 nF; 63 V

C32, C35 and C38

SMD 1206

C6, C7, C10, C12, C13, C15, 100 nF; 50 V

C34, C36, C37 and C39

SMD 0805

C20 and C21

C22, C23, C30 and C31

C24, C25

330 pF; 50 V

15 nF; 50 V

560 pF; 100 V

47 pF; 25V

SMD 0805

SMD 1206

C33

R4 and R3

39 kΩ; 0.1 W

30 kΩ; 0.1 W

10 kΩ; 0.1 W; optional SMD 0805

9.1 kΩ; 0.1 W; optional SMD 0805

R6, R7, R8 and R9

R13 and R12

R10 and R11

J1 and J2

5.6 kΩ; 0.1 W

22 Ω; 1 W

SMD 0805

SMD 2512

SMD 1206

4.7 Ω; 0.25 W

solder dot jumpers for ground reference in case of hum

(60 Hz noise)

J3 and J4

heatsink

wire jumpers for BTL application

30 mm SK400; OK for maximum music dissipation;

1/8 Prated (2 × 75 W/8) in 2 × 4 Ω at T_amb= 70 °C

printed-circuit board material 1.6 mm thick epoxy FR4 material, double sided 35 µm

copper; clearances 300 µm; minimum copper track

400 µm

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

16.12 Curves measured in reference design

The curves illustrated in Figs 30 and 31 show the effects

of supply pumping when only one single-ended channel is

driven with a low frequency signal; see Section 16.7.

The curves illustrated in Figs 20 and 21 are measured with

a specified load impedance. Spread in Z_L(e.g. due to the

frequency characteristics of the loudspeaker) can trigger

the maximum current protection circuit; see Section 16.6.

MGX324

MGX327

handbook, halfpage

THD

(%)

THD

(%)

(1)

−1

(1)

(2)

(3)

−2

−3

−2

−3

−2

−1

(W)

f (Hz)

2 × 8 Ω SE; V_P= ±20 V.

(1) 10 kHz.

2 × 8 Ω SE; V_P= ±20 V.

(1) _o= 10 W.

(2) P_o= 1 W.

(2) 1 kHz.

(3) 100 Hz.

Fig.12 THD + N as a function of output power.

Fig.13 THD + N as a function of input frequency.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MGX325

MGX328

handbook, halfpage

THD

(%)

THD

(%)

(1)

−1

(1)

(2)

(3)

−2

−3

−2

−1

(W)

f (Hz)

2 × 4 Ω SE; V_P= ±15 V.

(1) 10 kHz.

2 × 4 Ω SE; V_P= ±15 V.

(1) P_o= 10 W.

(2) 1 kHz.

(2) P_o= 1 W.

(3) 100 Hz.

Fig.14 THD + N as a function of output power.

Fig.15 THD + N as a function of input frequency.

MGX326

MGX329

handbook, halfpage

THD

(%)

THD

(%)

−1

(1)

(2)

(1)

(2)

−2

(3)

−3

−2

−1

f (Hz)

(W)

1 × 8 Ω BTL; V_P= ±15 V.

(1) 10 kHz.

1 × 8 Ω BTL; V_P= ±15 V.

(1) P_o= 10 W.

(2) 1 kHz.

(2) P_o= 1 W.

(3) 100 Hz.

Fig.16 THD + N as a function of output power.

Fig.17 THD + N as a function of input frequency.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MGX332

MGX333

100

handbook, halfpage

(1)

(2)

(3)

(%)

diss

(W)

(1)

(2)

(3)

−2

−1

100

(W)

f_i= 1 kHz.

(1) 2 × 4 Ω SE, V_P= ±15 V.

(2) 2 × 8 Ω SE, V_P= ±20 V.

(3) 1 × 8 Ω BTL, V_P= ±15 V.

f_i= 1 kHz.

(1) 2 × 8 Ω SE, V_P= ±20 V.

(2) 2 × 4 Ω SE, V_P= ±15 V.

(3) 1 × 8 Ω BTL, V_P= ±15 V.

Fig.18 Power dissipation as a function of output

power.

Fig.19 Efficiency as a function of output power.

MGX336

MGX337

100

handbook, halfpage

(1)

(W)

(1)

(3)

(2)

(3)

(2)

(V)

THD + N = 0.5%; f_i= 1 kHz.

(1) 1 × 8 Ω BTL.

THD + N = 10%; f_i= 1 kHz.

(1) 1 × 8 Ω BTL.

(2) 2 × 4 Ω SE.

(3) 2 × 8 Ω SE.

Fig.20 Output power as a function of supply

voltage.

Fig.21 Output power as a function of supply

voltage.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MGX331

MGX330

handbook, halfpage

(dB)

−20

−40

−60

−40

−60

−80

(1)

(2)

(1)

−80

(2)

−100

f (Hz)

2 × 8 Ω SE; V_P= ±20 V.

(1) P_o= 1 W.

2 × 4 Ω SE; V_P= ±15 V.

(1) P_o= 1 W.

(2) P_o= 10 W.

Fig.22 Channel separation as a function of input

frequency.

Fig.23 Channel separation as a function of input

frequency.

MGX340

MGX341

handbook, halfpage

(dB)

(1)

(2)

(3)

f (Hz)

V_i= 100 mV; R_s= 5.6 kΩ; C_i= 330 pF.

(1) 1 × 8 Ω BTL, V_P= ±15 V.

(2) 2 × 8 Ω SE, V_P= ±20 V.

(3) 2 × 4 Ω SE, V_P= ±15 V.

V_i= 100 mV; R_s= 0 kΩ.

(1) 1 × 8 Ω BTL, V_P= ±15 V.

(2) 2 × 8 Ω SE, V_P= ±20 V.

(3) 2 × 4 Ω SE, V_P= ±15 V.

Fig.24 Gain as a function of input frequency.

Fig.25 Gain as a function of input frequency.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MGX338

MGX339

320

100

handbook, halfpage

(mA)

clk

(kHz)

310

300

290

(V)

R_L= ∞.

Fig.26 Quiescent current as a function of supply

voltage.

Fig.27 Clock frequency as a function of supply

voltage.

MGX346

MGX347

handbook, halfpage

SVRR

(dB)

SVRR)

(dB)

−20

(1)

−40

(2)

(3)

(2)

−60

(3)

−80

−100

f (Hz)

(V)

ripple(p-p)

V_P= ±20 V; V_ripple= 2 V (p-p) with respect to ground.

(1) Both supply lines in phase.

V_P= ±20 V; V_ripplewith respect to ground (in phase).

(1) f_ripple= 1 kHz.

(2) Both supply lines in anti-phase.

(3) One supply line rippled.

(2) f_ripple= 100 Hz.

(3) f_ripple= 10 Hz.

Fig.28 SVRR as a function of input frequency.

Fig.29 SVRR as a function of V_ripple(p-p).

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MGX335

MGX334

handbook, halfpage

ripple(p-p)

(V)

ripple(p-p)

(V)

(1)

(2)

−2

−1

(W)

f (Hz)

3000 µF per supply line; f_i= 10 Hz.

(1) 1 × 4 Ω SE, V_P= ±15 V.

(2) 1 × 8 Ω SE, V_P= ±20 V.

3000 µF per supply line.

(1) P_o= 10 W into 1 × 4 Ω SE, V_P= ±15 V.

(2) P_o= 10 W into 1 × 8 Ω SE, V_P= ±20 V.

Fig.30 Supply voltage ripple as a function of output

power.

Fig.31 Supply voltage ripple as a function of input

frequency.

MGX342

MGX344

150

handbook, halfpage

THD

(%)

(mA)

120

(1)

−1

−2

−3

(2)

(3)

100

200

300

400

500

(kHz)

600

100

200

300

400

500

(kHz)

600

clk

V_P= ±20 V; P_o= 1 W into 8 Ω.

(1) 10 kHz.

V_P= ±20 V; R_L= ∞.

(2) 1 kHz.

(3) 100 Hz.

Fig.33 Quiescent current as a function of clock

frequency.

Fig.32 THD + N as a function of clock frequency.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

MGX345

MGX343

1000

handbook, halfpage

res(rms)

(mV)

(W)

800

600

400

200

100

200

300

400

500

(kHz)

600

200

300

400

500

(kHz)

600

clk

V_P= ±20 V; R_L= 8 Ω.

V_P= ±20 V; R_L= 8 Ω; f_i= 1 kHz; THD + N = 10%.

Fig.34 PWM residual voltage as a function of clock

frequency.

Fig.35 Output power as a function of clock

frequency.

MGX349

MGX348

120

handbook, halfpage

S/N

handbook, halfpage

(V)

(dB)

100

−1

(1)

(2)

−2

−3

−4

−5

−6

−2

−1

(V)

P (W)

MODE

V_P= ±20 V; R_s= 5.6 kΩ.; filter: 20 kHz AES17

(1) 2 × 8 Ω SE.

V_i= 100 mV; f_i= 1 kHz.

(2) 1 × 8 Ω BTL.

Fig.36 Output voltage as a function of mode

selection voltage.

Fig.36 Signal-to-noise ratio as a function of output

power.

2003 Mar 20

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in

white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

ahdnbok,uflapegwidt

DDP

DDA

+25 V

STABI PROT

18 13

DDP1

DDA2

DDA1

DDP2

BOOT1

OUT1

IN1−

RELEASE1

SWITCH1

ENABLE1

DRIVER

HIGH

INPUT

STAGE

PWM

MODULATOR

in1

CONTROL

AND

HANDSHAKE

IN1+

DRIVER

LOW

SGND1

mute

SGND

OSC

STABI

SSP1

OSC

SSA

TEMPERATURE SENSOR

CURRENT PROTECTION

TDA8922TH

OSCILLATOR

MANAGER

OSC

DDP2

MODE

mute

mode

BOOT2

OUT2

SGND

0 V

DRIVER

HIGH

ENABLE2

SGND2

SGND

CONTROL

AND

IN2+

SWITCH2

HANDSHAKE

INPUT

STAGE

PWM

MODULATOR

DRIVER

LOW

in2

RELEASE2

IN2−

SSP1

SSP2

SSA2

SSA1

SSD

−25 V

SSA

MGU998

SSP

Fig.37 Typical SE application schematic of TDA8922TH.

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in

white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

ahdnbok,uflapegwidt

DDP

DDA

+25 V

STABI PROT

DDA2

DDA1

DDP2

DDP1

BOOT1

OUT1

IN1−

RELEASE1

SWITCH1

ENABLE1

DRIVER

HIGH

INPUT

STAGE

PWM

MODULATOR

in1

CONTROL

AND

HANDSHAKE

IN1+

DRIVER

LOW

SGND1

mute

SGND

OSC

STABI

SSP1

OSC

SSA

TEMPERATURE SENSOR

CURRENT PROTECTION

TDA8922J

OSCILLATOR

MANAGER

OSC

DDP2

MODE

mute

mode

BOOT2

OUT2

SGND

0 V

DRIVER

HIGH

ENABLE2

SGND2 19

SGND

CONTROL

AND

IN2+ 22

SWITCH2

HANDSHAKE

INPUT

STAGE

PWM

MODULATOR

DRIVER

LOW

in2

RELEASE2

IN2− 21

SSP1

SSP2

SSA2

SSA1

SSD

−25 V

SSA

MGU999

SSP

Fig.38 Typical SE application schematic of TDA8922J.

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

17 PACKAGE OUTLINES

HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height

SOT566-3

pin 1 index

(A )

detail X

w M

10 mm

scale

DIMENSIONS (mm are the original dimensions)

max.

(1)

(2)

UNIT

8°

0°

+0.08 0.53 0.32

−0.04 0.40 0.23

16.0 13.0 1.1 11.1 6.2

15.8 12.6 0.9 10.9 5.8

2.9

2.5

14.5 1.1

13.9 0.8

1.7

1.5

2.7

2.2

3.5

3.2

3.5

0.35

0.25 0.25 0.03 0.07

Notes

1. Limits per individual lead.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

02-01-30

03-02-18

SOT566-3

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)

SOT411-1

non-concave

view B: mounting base side

v M

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT A

4.6 1.15 1.65 0.75 0.55 30.4 28.0

4.3 0.85 1.35 0.60 0.35 29.9 27.5

12.2

11.8

10.15 6.2 1.85 3.6 14 10.7 2.4

9.85 5.8 1.65 2.8 13 9.9 1.6

1.43

0.78

2.1

1.8

2.54 1.27 5.08

4.3

0.6 0.25 0.03 45°

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

98-02-20

02-04-24

SOT411-1

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

18 SOLDERING

18.3.2 WAVE SOLDERING

18.1 Introduction

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

To overcome these problems the double-wave soldering

method was specifically developed.

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mount components are mixed on

one printed-circuit board. Wave soldering can still be used

for certain surface mount ICs, but it is not suitable for fine

pitch SMDs. In these situations reflow soldering is

recommended.

If wave soldering is used the following conditions must be

observed for optimal results:

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

18.2 Through-hole mount packages

18.2.1 SOLDERING BY DIPPING OR BY SOLDER WAVE

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joints for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (T_stg(max)). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

• For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

18.2.2 MANUAL SOLDERING

Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bit

is less than 300 °C it may remain in contact for up to

10 seconds. If the bit temperature is between

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

300 and 400 °C, contact may be up to 5 seconds.

18.3.3 MANUAL SOLDERING

18.3 Surface mount packages

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C. When using a dedicated tool, all other leads can

be soldered in one operation within 2 to 5 seconds

between 270 and 320 °C.

18.3.1 REFLOW SOLDERING

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferably be kept:

• below 220 °C for all the BGA packages and packages

with a thickness 2.5mm and packages with a thickness

<2.5 mm and a volume ≥350 mm³so called thick/large

packages

• below 235 °C for packages with a thickness <2.5 mm

and a volume <350 mm³so called small/thin packages.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

18.4 Suitability of IC packages for wave, reﬂow and dipping soldering methods

SOLDERING METHOD

WAVE

REFLOW⁽²⁾DIPPING

suitable⁽³⁾

BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable

MOUNTING

PACKAGE⁽¹⁾

Through-hole mount DBS, DIP, HDIP, SDIP, SIL

−

suitable

Surface mount

suitable

−

DHVQFN, HBCC, HBGA, HLQFP, HSQFP,

HSOP, HTQFP, HTSSOP, HVQFN, HVSON,

SMS

not suitable⁽⁴⁾

PLCC⁽⁵⁾, SO, SOJ

suitable

−

LQFP, QFP, TQFP

not recommended⁽⁵⁾⁽⁶⁾suitable

not recommended⁽⁷⁾

suitable

SSOP, TSSOP, VSO, VSSOP

Notes

1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

6. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than

0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2003 Mar 20

Philips Semiconductors

Objective speciﬁcation

2 × 25 W class-D power ampliﬁer

TDA8922

19 DATA SHEET STATUS

DATA SHEET

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾⁽³⁾

LEVEL

DEFINITION

Objective data

Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

20 DEFINITIONS

21 DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

Application information

Applications that are

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2003 Mar 20

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA75

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

753503/01/pp36

Date of release: 2003 Mar 20

Document order number: 9397 750 10757

厂商	型号	描述	页数
CK-COMPONENTS	TDA	超微型表面贴装半间距DIP开关[ Ultra-miniature Surface Mount Half-pitch DIP Switches ]	2 页
INFINEON	TDA 16846	控制器的开关电源支持低功耗待机和功率因数校正[ Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor Correction ]	28 页
NXP	TDA 8920	- 12号的铝制车身绘（ RAL 7032 ）	36 页
ADAM-TECH	TDA-06	屏障端子排[ BARRIER TERMINAL STRIPS ]	1 页
STMICROELECTRONICS	TDA-2009A	10 10W立体声放大器[ 10 10W STEREO AMPLIFIER ]	12 页
STMICROELECTRONICS	TDA-7296	70V - 60W DMOS音频放大器，具有静音/ ST- BY[ 70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ]	15 页
ETC	TDA0077001	[ OSC MEMS 100MHZ 1.8V SMD ]	1 页
STMICROELECTRONICS	TDA0161	接近探测器[ PROXIMITY DETECTORS ]	6 页
STMICROELECTRONICS	TDA0161CM	[ SPECIALTY ANALOG CIRCUIT, MBCY8 ]	4 页
STMICROELECTRONICS	TDA0161DP	接近探测器[ PROXIMITY DETECTORS ]	6 页