请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH10N100AU1

型号：

IXGH10N100AU1

描述：

低VCE （ sat）的IGBT与二极管，高速IGBT与二极管[ Low VCE(sat) IGBT with Diode, High speed IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

125 K

下载PDF手册
VCES  
IC25 VCE(sat)  
Low VCE(sat) IGBT with Diode  
High speed IGBT with Diode  
IXGH 10 N100U1  
IXGH 10 N100AU1  
1000 V 20 A 3.5 V  
1000 V 20 A 4.0 V  
CombiPacks  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
20  
10  
40  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 150 Ω  
Clamped inductive load, L = 300 µH  
ICM = 20  
@ 0.8 VCES  
A
Features  
PC  
TC = 25°C  
100  
W
l
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
International standard package  
JEDEC TO-247 AD  
IGBT and anti-parallel FRED in one  
package  
2nd generation HDMOSTM process  
Low VCE(sat)  
TJM  
Tstg  
l
-55 ... +150  
l
l
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
Weight  
6
g
- for low on-state conduction losses  
l
l
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode (FRED)  
- soft recovery with low IRM  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
l
l
l
BVCES  
VGE(th)  
IC = 4 mA, VGE = 0 V  
1000  
2.5  
V
V
l
IC = 500 µA, VCE = VGE  
5.5  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
400 µA  
mA  
Advantages  
5
l
Space savings (two devices in one  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
package)  
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Reduces assembly time and cost  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
10N100U1  
10N100AU1  
3.5  
4.0  
V
V
l
91753F(3/97)  
© 1997 IXYS All rights reserved  
IXGH 10N100U1  
IXGH 10N100AU1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; VCE = 10 V,  
4
8
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
750  
200  
30  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
52  
13  
24  
70 nC  
25 nC  
45 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
100  
200  
550  
ns  
ns  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
IC = IC90, VGE = 15 V, L = 300 µH,  
VCE = 0.8 VCES, RG = Roff = 150 Ω  
900 ns  
Remarks: Switching times  
may increase  
for VCE (Clamp) > 0.8 • VCES  
10N100U1  
10N100AU1  
800  
500  
ns  
ns  
,
Eoff  
10N100AU1  
2
3
mJ  
higher TJ or increased RG  
td(on)  
tri  
100  
200  
1.1  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 300 µH  
VCE = 0.8 VCES, RG = Roff = 150 Ω  
Eon  
td(off)  
tfi  
mJ  
600 1000 ns  
Remarks: Switching times  
may increase  
10N100U1  
10N100AU1  
1250 2000 ns  
600 1000 ns  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
10N100U1  
10N100AU1  
5.0  
2.5  
mJ  
mJ  
RthJC  
RthCK  
1.2 K/W  
K/W  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
2.75  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs  
IRM  
trr  
6.5  
120  
50  
A
ns  
ns  
VR = 540 V  
TJ =125°C  
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C  
60  
RthJC  
1.6 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH 10N100U1  
IXGH 10N100AU1  
Fig. 1 Saturation Characteristics  
Fig. 2 Output Characterstics  
20  
18  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
13V  
TJ = 25°C  
VGE = 15V  
VGE = 15V  
13V  
TJ = 25°C  
11V  
9V  
7V  
11V  
9V  
6
4
2
7V  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4 Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25°C  
VGE = 15V  
IC = 20A  
IC = 20A  
IC = 10A  
IC = 10A  
IC = 5A  
IC = 5A  
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
20  
18  
16  
14  
12  
10  
8
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VCE = 10V  
VGE(th)  
IC = 250µA  
BVCES  
IC = 3mA  
TJ = 125°C  
TJ = 25°C  
6
4
TJ = - 40°C  
2
0
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
0
1
2
3
4
5
6
7
8
9
10  
VGE - Volts  
© 1997 IXYS All rights reserved  
IXGH 10N100U1  
IXGH 10N100AU1  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
900  
850  
800  
750  
700  
650  
600  
7
6
5
4
3
2
1
1000  
800  
600  
400  
200  
0
5
4
3
2
1
0
TJ =125°C  
IC = 10A  
T
=125°C  
J
R =150Ω  
E
G
off  
t
fi  
E
off  
t
fi  
4
6
8
10 12 14 16 18 20 22  
20  
40  
60  
80 100 120 140 160  
IC - Amperes  
RG - Ohms  
Fig.9 Gate Charge Characteristic Curve  
Fig.10 Turn-Off Safe Operating Area  
15  
12  
9
IC = 10A  
VCE = 800V  
10  
1
TJ = 125°C  
RG = 150Ω  
dV/dt < 3V/ns  
6
0.1  
3
0
0.01  
0
200  
400  
600  
800  
1000  
0
10  
20  
30  
40  
50  
VCE - Volts  
Qg - nCoulombs  
Fig.11 Transient Thermal Impedance  
1
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
0.1  
D = Duty Cycle  
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Time - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH 10N100U1  
IXGH 10N100AU1  
Fig.12 Maximum Forward Voltage Drop  
Fig.13 Peak Forward Voltage VFR and  
Forward Recovery Time tFR  
40  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
1000  
800  
600  
400  
200  
0
TJ = 125°C  
VFR  
IF = 12A  
TJ = 100°C  
t
TJ = 150°C  
fr  
TJ = 25°C  
0
0.0  
0.5 1.0  
1.5 2.0  
2.5 3.0  
3.5  
0
100  
200  
300  
400  
Voltage Drop - Volts  
diF /dt - A/µs  
Fig.14 Junction Temperature Dependence  
off IRM and Qr  
Fig.15 Reverse Recovery Chargee  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
TJ = 100°C  
VR = 540V  
IF = 12A  
IRM  
Qr  
0
20 40 60 80 100 120 140 160  
TJ - Degrees C  
1
10  
100  
diF /dt - A/µs  
1000  
Fig.16 Peak Reverse Recovery Current  
Fig.17 Reverse Recovery Time  
30  
25  
20  
15  
10  
5
600  
500  
400  
300  
200  
100  
0
TJ = 100°C  
VR = 540V  
IF = 12A  
TJ = 100°C  
VR = 540V  
IF = 12A  
0
100  
200  
300  
400  
0
100  
200  
300  
400  
diF /dt - A/µs  
diF /dt - A/µs  
© 1997 IXYS All rights reserved  
IXGH 10N100U1  
IXGH 10N100AU1  
Fig.18 Diode Transient Thermal resistance junction to case  
1.0  
0.1  
0.001  
0.003  
0.01  
0.1  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.178311s