IXGH 32N60AU1
IXGH 32N60AU1S
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
15
20
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
2500
270
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
125
23
150 nC
35 nC
75 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
e
50
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
25
30
ns
ns
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
120
125
1.8
200 ns
175 ns
mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
25
35
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
e
L
L1
5.20
19.81 20.32
5.72 0.205 0.225
.780 .800
Eon
td(off)
1
mJ
ns
4.50
.177
P
3.55
5.89
3.65
.140 .144
140
Q
6.40 0.232 0.252
tfi
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
260
4
ns
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eoff
mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
TO-247 SMD Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.6
15
V
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
VR = 360 V
10
TJ = 125°C 150
A
ns
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
35
50 ns
RthJC
1 K/W
1. Gate
2. Collector
3. Emitter
4. Collector
Min. Recommended Footprint
(Dimensions in inches and mm)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
1.14
1.91
1.40
2.13
.045 .055
.075 .084
C
D
0.61
20.80
0.80
21.34
.024 .031
.819 .840
E
e
15.75
5.45
16.13
BSC
.620 .635
.215 BSC
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193 .201
.106 .114
.083 .091
L1
L2
L3
L4
.00
.004
.075 .083
ØP
Q
3.55
5.59
3.65
6.20
.140 .144
.220 .244
R
S
4.32
6.15
4.83
BSC
.170 .190
.242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0 Fax: +49-6206-503627
