IXGH22N50BU1
IXGH22N50BU1S
TO-247 AD Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
9
16
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
1450
120
37
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
90
11
30
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
e
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
td(on)
tri
Eon
td(off)
tfi
15
30
0.15
100
55
ns
ns
mJ
Inductive load, TJ = 25°C
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 10 Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
150 ns
110 ns
0.5 mJ
Eoff
Note 1
0.3
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Inductive load, TJ = 125°C
td(on)
tri
Eon
td(off)
tfi
15
30
0.15
140
100
0.6
ns
ns
mJ
ns
ns
mJ
IC = IC90, VGE = 15 V, L = 100 µH
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
V
CE = 0.8 VCES, RG = Roff = 10 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Note 1
Eoff
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
RthJC
RthCK
0.83 K/W
K/W
0.25
TO-247 SMD Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
Test Conditions
IF = IC90, VGE = 0 V,
1.6
15
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
VR = 360 V
10
TJ =125°C 150
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 35
A
ns
50 ns
RthJC
1 K/W
1. Gate
3. Emitter
2. Collector
4. Collector
Note 1: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min. Recommended Footprint (Dimensions in inches and mm)
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
b
b1
1.14
1.91
1.40
2.13
.045
.075
.055
.084
C
D
0.61
20.80
0.80
21.34
.024
.819
.031
.840
E
e
15.75
5.45
16.13
BSC
.620
.215 BSC
.635
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193
.106
.083
.00
.201
.114
.091
.004
.083
L1
L2
L3
L4
.075
ØP
Q
3.55
5.59
3.65
6.20
.140
.220
.144
.244
R
S
4.32
6.15
4.83
BSC
.170
.242 BSC
.190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
