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IXGK50N60BU1

型号：

IXGK50N60BU1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

165 K

下载PDF手册
HiPerFASTTM  
IGBT with Diode  
VCES  
IC25 VCE(sat)  
tfi  
IXGK 50N50BU1  
IXGK 50N60BU1  
500 V 75 A 2.3 V 100ns  
600 V 75 A 2.5 V 120ns  
CombiPack  
Preliminary data  
Symbol  
TestConditions  
MaximumRatings  
TO-264 AA  
50N50  
50N60  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MW  
500  
500  
600  
600  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
C
E
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
75  
50  
200  
75  
50  
200  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 30 mH  
ICM = 100  
@ 0.8 VCES  
A
Features  
●
Internationalstandardpackage  
JEDEC TO-264 AA  
PC  
TC = 25°C  
300  
300  
W
●
High frequency IGBT and anti-  
parallel FRED in one package  
2nd generation HDMOSTM process  
Low VCE(sat)  
- forminimumon-stateconduction  
losses  
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode (FRED)  
- soft recovery with low IRM  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
●
●
Md  
Mounting torque (M4)  
0.9/6  
10  
Nm/lb.in.  
Weight  
g
●
●
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
●
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptiblepowersupplies(UPS)  
Symbol  
BVCES  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
●
●
●
●
Switch-modeandresonant-mode  
IC = 500 mA, VGE = 0 V  
IC = 500 mA, VCE = VGE  
50N50  
50N60  
500  
600  
2.5  
V
V
V
powersupplies  
VGE(th)  
ICES  
5.5  
Advantages  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250  
15 mA  
mA  
●
Space savings (two devices in one  
package)  
Easy to mount with 1 screw  
●
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
(isolatedmountingscrewhole)  
Reduces assembly time and cost  
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
50N50BU1  
50N60BU1  
2.3  
2.5  
V
V
●
●
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97510A(1/98)  
1 - 6  
IXGK50N50BU1  
IXGK50N60BU1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
IC = IC90; VCE = 10 V,  
25  
35  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Remarks: Add capacitance from  
IXGH50N60B(DS95585B)  
Qg  
200  
50  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
70  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
IC = IC90, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
110  
Remarks: Switching times may increase 50N50  
for VCE (Clamp) > 0.8 • VCES, higher TJ or 50N60  
increased RG  
80  
150  
1.8  
150 ns  
ns  
mJ  
3.0 mJ  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
Eoff  
50N50  
50N60  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
td(on)  
tri  
50  
60  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
K
L
L1  
P
20.32 20.83  
.800  
.090  
.820  
.102  
Eon  
td(off)  
tfi  
3
2.29  
2.59  
3.17  
3.66  
.125  
.144  
200  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Q
Q1  
R
R1  
S
T
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
50N50  
50N60  
50N50  
50N60  
100  
250  
2.6  
4.2  
ns  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Eoff  
mJ  
mJ  
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.15  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.7  
33  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms  
VR = 360 V  
19  
175  
35  
A
ns  
TJ = 125°C  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C  
50 ns  
RthJC  
0.75 K/W  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 6  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGK50N50BU1  
IXGK50N60BU1  
100  
80  
60  
40  
20  
0
200  
VGE = 15V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
11V  
13V  
11V  
9V  
9V  
13V  
160  
120  
80  
7V  
7V  
40  
5V  
5V  
0
0
1
2
3
4
5
0
2
4
6
8
10  
VCE - Volts  
VCE - Volts  
Figure 1. Saturation Voltage Characteristics  
Figure 2. Extended Output Characteristics  
100  
1.6  
TJ = 125°C  
VGE = 15V  
VGE = 15V  
9V  
IC = 100A  
13V  
11V  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
80  
60  
40  
20  
0
7V  
5V  
IC = 50A  
IC = 25A  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Figure 3. Saturation Voltage Characteristics  
Figure 4. Temperature Dependence of VCE(sat)  
10000  
100  
f = 1Mhz  
V
CE = 10V  
C
iss  
80  
60  
40  
20  
0
1000  
C
oss  
100  
TJ = 25°C  
TJ = 125°C  
C
rss  
10  
0
5
10 15 20 25 30 35 40  
0
2
4
6
8
10  
VGE - Volts  
VCE-Volts  
Figure 6. Capacitance Curves  
Figure 5. Admittance Curves  
© 2000 IXYS All rights reserved  
3 - 6  
IXGK50N50BU1  
IXGK50N60BU1  
12  
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
10  
TJ = 125°C  
RG = 4.7  
TJ = 125°C  
E(ON)  
10  
8
E(ON)  
IC = 100A  
E(OFF)  
8
6
4
2
0
E(OFF)  
6
E(ON)  
IC = 50A  
IC =25A  
4
E(OFF)  
E(OFF)  
E(ON)  
2
0
100  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
RG - Ohms  
IC - Amperes  
Figure 7. Dependence of EON and EOFF on IC.  
Figure 8. Dependence of EON and EOFF on RG.  
600  
20  
IC =50A  
VCE = 250V  
100  
15  
10  
5
TJ = 125°C  
10  
RG = 5.2  
dV/dt < 5V/ns  
1
0.1  
0
0
100  
200  
300  
400  
500  
0
50  
100  
150  
200  
250  
300  
VCE - Volts  
Qg - nanocoulombs  
Figure 10. Turn-off Safe Operating Area  
Figure 9. Gate Charge  
1
D=0.5  
0.1  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D = Duty Cycle  
0.01  
D=0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Figure 11. IGBT Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 6  
IXGK50N50BU1  
IXGK50N60BU1  
© 2000 IXYS All rights reserved  
5 - 6  
IXGK50N50BU1  
IXGK50N60BU1  
© 2000 IXYS All rights reserved  
6 - 6  
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ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

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