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IXGH30N30

型号:

IXGH30N30

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

77 K

HiPerFASTTM IGBT  
IXGH30N30  
VCES = 300 V  
IC25 = 60 A  
VCE(sat) = 1.6 V  
tfi  
= 180 ns  
Preliminary data  
TO-247 AD  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
TAB)  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
IC25  
IC90  
ICM  
TC = 25°C  
60  
30  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
120  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 W ICM = 60  
Clamped inductive load, L = 100 mH @ 0.8 VCES  
A
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
· Internationalstandardpackage  
JEDEC TO-247 AD  
-55 ... +150  
· Highcurrenthandlingcapability  
· NewestgenerationHDMOSTM  
process  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
°C  
°C  
260  
· MOS Gate turn-on  
- drive simplicity  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
Weight  
TO-247 AD  
6
g
Applications  
· AC motor speed control  
· DC servo and robot drives  
· DC choppers  
Symbol  
TestConditions  
CharacteristicValues  
· Uninterruptiblepowersupplies(UPS)  
· Switched-modeandresonant-mode  
powersupplies  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
300  
2.5  
V
V
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 mA  
· High power density  
1
nA  
1.6  
mA  
· Suitableforsurfacemounting  
· Switching speed for high frequency  
applications  
· Easy to mount with 1 screw,  
(isolatedmountingscrewhole)  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = IC90, VGE = 15 V  
±100  
VCE(sat)  
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
96542C(7/00)  
1 - 4  
IXGH 30N30  
TO-247 AD (IXGH) Outline  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ.  
max.  
IC = IC90; VCE = 10 V,  
20  
28  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
2500  
210  
60  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
145  
23  
170 nC  
35 nC  
75 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
50  
Dim. Millimeter  
Inches  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
25  
40  
ns  
ns  
ns  
Min. Max. Min. Max.  
IC = IC90, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 1.0 W  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
170  
180  
1.0  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
Eoff  
mJ  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
td(on)  
tri  
25  
40  
ns  
ns  
G
H
1.65 2.13 0.065 0.084  
Inductive load, TJ = 125°C  
-
4.5  
-
0.177  
IC = IC90, VGE = 15 V, L = 100 mH  
J
K
1.0  
1.4 0.040 0.055  
Eon  
td(off)  
tfi  
0.3  
250  
300  
1.6  
mJ  
10.8 11.0 0.426 0.433  
VCE = 0.8 VCES, RG = Roff = 1.0 W  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
420 ns  
450 ns  
2.4 mJ  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
N
1.5 2.49 0.087 0.102  
Eoff  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGH 30N30  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
Fig. 6. Capacitance Curves)  
Fig. 3. High Temperature Output Characteristics  
Fig. 5. Admittance Curves  
© 2000 IXYS All rights reserved  
3 - 4  
IXGH 30N30  
Fig. 7. Dependence of EON and EOFF on IC.  
Fig. 8. Dependence of EON and EOFF on RG.  
Fig. 9. Gate Charge  
Fig. 10. Turn-off Safe Operating Area  
Fig. 11. Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 4  
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