IXGH 10N100
IXGH 10N100A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
4
8
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
750
150
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
52
13
24
70 nC
25 nC
45 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
550
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES, RG = Roff = 150 Ω
900 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES
10N100
10N100A
800
500
ns
ns
,
Eoff
10N100A
2
3
mJ
higher TJ or increased RG
td(on)
tri
100
200
1.1
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES, RG = Roff = 150 Ω
600 1000 ns
Remarks: Switching times
may increase
10N100
10N100A
1250 2000 ns
950 1000 ns
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
10N100
10N100A
5.0
2.5
mJ
mJ
RthJC
RthCK
1.2 K/W
K/W
0.25
IXGH 10N100 and IXGH 10N100A characteristic curves are located on the
IXGH 10N100U1 and IXGH 10N100AU1 data sheets.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
