IXGH 17N100
IXGM 17N100
IXGH 17N100A IXGM 17N100A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
6
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
175
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
100
20
120 nC
30 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
60
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 300 µH,
V
CE = 0.8 VCES, RG = Roff = 82 Ω
500 1000 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES
17N100
17N100A
750
450
ns
750 ns
,
Eoff
17N100A
3
mJ
higher TJ or increased RG
td(on)
tri
100
200
2.5
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES, RG = Roff = 82 Ω
700 1000 ns
Remarks: Switching times
may increase
17N100
17N100A
1200 2000 ns
750 1000 ns
for VCE (Clamp) > 0.8 • VCES
,
Eoff
17N100
17N100A
8
6
mJ
mJ
higher TJ or increased RG
TO-204AE Outline
RthJC
RthCK
0.83 K/W
K/W
0.25
IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the
IXGH 17N100U1 and IXGH 17N100AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
