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IXGH22N50BS

型号:

IXGH22N50BS

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

72 K

Symbol  
                                                    
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m
                                                                                                                                           
                                                                                                                                              
u
                                                                                                                                               
                                                                                                                                                 
m
                                                                                                                                                 
                                                                                                                                                     
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Preliminary data  
VCES  
IC(25)  
= 500 V  
= 44 A  
IXGH22N50B  
IXGH22N50BS  
HiPerFASTTM IGBT  
VCE(sat)typ = 2.1 V  
tfi(typ)  
= 55 ns  
TO-247 SMD*  
C (TAB)  
TAB)  
G
E
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
500  
500  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
44  
22  
88  
A
A
A
E
G = Gate,  
C = Collector,  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 100 µH  
ICM = 44  
@ 0.8 VCES  
A
E = Emitter,  
TAB = Collector  
Features  
PC  
TC = 25°C  
150  
W
International standard packages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
JEDEC TO-247 SMD surface  
TJM  
Tstg  
mountable and JEDEC TO-247 AD  
-55 ... +150  
High frequency IGBT  
High current handling capability  
HiPerFASTTM HDMOSTM process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
MOS Gate turn-on  
Weight  
TO-247 AD  
TO-247 SMD  
6
4
g
g
- drive simplicity  
Applications  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
AC motor speed control  
DC servo and robot drives  
DC choppers  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
500  
2.5  
V
V
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
High power density  
Very low switching losses for high  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
frequency applications  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.1  
2.5  
Easy to mount with 1 screw,TO-247  
(insulated mounting screw hole)  
© 1996 IXYS All rights reserved  
96532A(12/96)  
IXGH22N50B IXGH22N50BS  
TO-247 AD Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; VCE = 10 V,  
9
16  
S
P
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
1450  
37  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
120  
pF  
Qg  
Qge  
Qgc  
90  
11  
30  
nC  
nC  
nC  
e
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
30  
0.15  
100  
55  
ns  
ns  
mJ  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
150 ns  
110 ns  
0.5 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eoff  
Note 1  
0.3  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
30  
0.15  
140  
100  
0.6  
ns  
ns  
mJ  
ns  
ns  
mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
.780 .800  
.177  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
Note 1  
RthJC  
RthCK  
0.83 K/W  
K/W  
0.25  
TO-247 SMD Outline  
Note 1: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Min. Recommended Footprint (Dimensions in inches and mm)  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190  
.090  
.075  
.205  
.100  
.085  
b
b1  
1.14  
1.91  
1.40  
2.13  
.045  
.075  
.055  
.084  
C
D
0.61  
20.80  
0.80  
21.34  
.024  
.819  
.031  
.840  
E
e
15.75  
5.45  
16.13  
BSC  
.620  
.215 BSC  
.635  
L
4.90  
2.70  
2.10  
0.00  
1.90  
5.10  
2.90  
2.30  
0.10  
2.10  
.193  
.106  
.083  
.00  
.201  
.114  
.091  
.004  
.083  
L1  
L2  
L3  
L4  
.075  
ØP  
Q
3.55  
5.59  
3.65  
6.20  
.140  
.220  
.144  
.244  
R
S
4.32  
6.15  
4.83  
BSC  
.170  
.242 BSC  
.190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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