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2SK2569ZN-TL-E

型号：

2SK2569ZN-TL-E

描述：

硅N沟道MOS FET[ Silicon N Channel MOS FET ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

7 页

PDF大小：

103 K

下载PDF手册
2SK2569  
Silicon N Channel MOS FET  
REJ03G1018-0300  
Rev.3.00  
Dec 27, 2006  
Application  
High speed power switching  
Features  
•
•
•
•
Low on-resistance.  
RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA)  
2.5 V gate drive device.  
Small package (MPAK).  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
D
3
1
2
G
1. Source  
2. Gate  
3. Drain  
S
Note: Marking is "ZN–"  
Rev.3.00 Dec 27, 2006 page 1 of 6  
2SK2569  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
Ratings  
50  
Unit  
V
VGSS  
±20  
V
ID  
0.2  
A
1
Drain peak current  
ID(pulse)  
Pch*2  
*
0.4  
A
Channel dissipation  
150  
mW  
°C  
°C  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
50  
Typ  
Max  
—
Unit  
V
Test Conditions  
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
V(BR)DSS  
V(BR)GSS  
IDSS  
—
—
—
—
—
2.0  
ID = 100 µA, VGS = 0  
IG = ±100 µA, VDS = 0  
VDS = 40 V, VGS = 0  
VGS = ±16 V, VDS = 0  
ID = 10 µA, VDS = 5 V  
ID = 100 mA, VGS = 4 V*2  
±20  
—
—
V
1.0  
±2.0  
1.5  
2.6  
µA  
µA  
V
IGSS  
—
VGS(off)  
RDS(on)1  
0.5  
—
Static drain to source on state  
resistance  
Ω
Static drain to source on state  
resistance  
RDS(on)2  
—
3.1  
5.0  
Ω
ID = 40 mA, VGS = 2.5 V*2  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
0.13  
—
0.23  
14.0  
17.2  
1.73  
40  
—
—
—
—
—
—
—
—
S
ID = 100 mA, VDS = 10 V  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS = 10 V, VGS = 0,  
f = 1 MHz  
—
—
—
VGS = 10 V, ID = 100 mA,  
RL = 300 Ω  
—
86  
Turn-off delay time  
Fall time  
td(off)  
tf  
—
1120  
430  
—
Note: 2. Pulse test  
Rev.3.00 Dec 27, 2006 page 2 of 6  
2SK2569  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
1 ms  
1
0.3  
200  
150  
100  
50  
0.1  
DC Operation  
Operation in  
this area is  
limited by R  
DS(on)  
0.03  
0.01  
0.003  
0.001  
Ta = 25°C  
0
50  
100  
150  
200  
0.1 0.3  
1
3
10  
30  
100  
Case Temperature Tc (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
10 V 4 V  
0.20  
0.16  
0.12  
0.08  
0.04  
0.20  
0.16  
0.12  
0.08  
0.04  
2.3 V  
2.5 V  
25°C  
Tc = 75°C  
–25°C  
2 V  
VDS = 5 V  
Pulse Test  
Pulse Test  
2
VGS = 1.5 V  
0
0
1
2
3
4
5
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
20  
10  
5
0.5  
0.4  
0.3  
0.2  
0.1  
Pulse Test  
Pulse Test  
ID = 0.2 A  
VGS = 2.5 V  
2
1
4 V  
0.1 A  
0.5  
0.05 A  
0.2  
8
0
2
4
6
10  
0.01 0.02 0.05 0.1 0.2  
0.5  
1
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.3.00 Dec 27, 2006 page 3 of 6  
2SK2569  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
0.5  
10  
8
Pulse Test  
0.2  
0.1  
Tc = –25°C  
25°C  
ID = 0.2 A  
6
VGS = 2.5 V  
0.1 A  
0.05 A  
0.2 A  
0.05  
75°C  
4
0.02  
0.01  
2
0.05, 0.1 A  
VDS = 10 V  
Pulse Test  
4 V  
0
0.005  
0.001 0.003 0.01 0.03  
0.1  
0.3  
1
–40  
0
40  
80  
120  
160  
Case Temperature TC (°C)  
Drain Current ID (A)  
Typical Capacitance vs.  
Drain to Source Voltage  
Switching Characteristics  
2
1
100  
t
d(off)  
30  
10  
Ciss  
t
f
0.5  
Coss  
0.2  
0.1  
3
1
t
r
Crss  
VGS = 10 V  
VDD = 30 V  
PW = 5 µs  
duty < 1 %  
t
d(on)  
0.05  
0.3  
0.1  
VGS = 0  
f = 1 MHz  
0.02  
1
0
10  
20  
30  
40  
50  
0.01 0.02 0.05 0.1 0.2  
0.5  
Drain to Source Voltage VDS (V)  
Drain Current ID (A)  
Reverse Drain Current vs.  
Source to Drain Voltage  
0.20  
0.16  
0.12  
0.08  
0.04  
–5 V  
VGS = 0  
Pulse Test  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Source to Drain Voltage VSD (V)  
Rev.3.00 Dec 27, 2006 page 4 of 6  
2SK2569  
Switching Test Circuit  
Vin Monitor  
Waveform  
Vout  
Monitor  
90%  
D.U.T.  
10%  
10%  
Vin  
RL  
Vout  
10%  
VDD  
= 30 V  
Vin  
50 Ω  
10 V  
90%  
90%  
t
t
d(off)  
t
r
d(on)  
t
f
Rev.3.00 Dec 27, 2006 page 5 of 6  
2SK2569  
Package Dimensions  
Package Name  
MPAK  
JEITA Package Code  
SC-59A  
RENESAS Code  
PLSP0003ZB-A  
Previous Code  
MASS[Typ.]  
0.011g  
MPAK(T) / MPAK(T)V  
D
A
Q
c
e
E
HE  
L
L
P
L
1
A
A
A3  
b
Dimension in Millimeters  
Min Nom Max  
Reference  
Symbol  
x
S
A
M
e
A
A1  
A2  
A3  
b
c
D
E
e
HE  
L
L1  
LP  
x
b2  
e1  
I1  
1.0  
0
1.0  
1.3  
0.1  
1.2  
1.1  
0.25  
0.4  
A
2
1
A
0.35  
0.1  
2.7  
1.35  
0.5  
0.16 0.26  
3.1  
e1  
1.5  
0.95  
2.8  
1.65  
A
S
2.2  
3.0  
b
0.35  
0.15  
0.25  
0.75  
0.55  
0.65  
0.05  
0.55  
I1  
c
1.95  
0.3  
b
2
1.05  
A-A Section  
Pattern of terminal position areas  
Q
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK2569ZN-TL-E  
2SK2569ZN-TR-E  
3000 pcs  
3000 pcs  
Taping  
Taping  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.3.00 Dec 27, 2006 page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Notes:  
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes  
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property  
rights or any other rights of Renesas or any third party with respect to the information in this document.  
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,  
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.  
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass  
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws  
and regulations, and procedures required by such laws and regulations.  
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this  
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,  
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be  
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )  
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a  
result of errors or omissions in the information included in this document.  
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability  
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular  
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.  
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications  
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality  
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or  
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall  
have no liability for damages arising out of the uses set forth above.  
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:  
(1) artificial life support devices or systems  
(2) surgical implantations  
(3) healthcare intervention (e.g., excision, administration of medication, etc.)  
(4) any other purposes that pose a direct threat to human life  
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing  
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all  
damages arising out of such applications.  
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,  
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages  
arising out of the use of Renesas products beyond such specified ranges.  
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain  
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage  
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and  
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software  
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.  
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as  
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.  
Renesas shall have no liability for damages arising out of such detachment.  
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.  
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have  
any other inquiries.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology (Shanghai) Co., Ltd.  
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120  
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145  
Renesas Technology Malaysia Sdn. Bhd  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .7.0  
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