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NX2158CMTR

型号：

NX2158CMTR

描述：

PWM升压控制器[ PWM BOOST CONTROLLER ]

品牌：

MICROSEMI[ Microsemi ]

页数：

5 页

PDF大小：

124 K

下载PDF手册
NX2158  
PWM BOOST CONTROLLER  
PRODUCTION DATA SHEET  
Pb Free Product  
FEATURES  
DESCRIPTION  
The NX2158 controller IC is a boost controller IC de-  
signed for step up DC to DC converter applications. The  
NX2158 operates at programmable frequency from  
200kHz to 2MHz and employs cycle by cycle current  
limiting by sensing the Rdson of NMOSFET.  
n
Single Supply Voltage fom 3V to 5.5V  
n Programmable Frequency up to 2MHz  
n Internal Digital Soft Start Function  
n
Cycle by Cycle Current Limit by Sensing Rdson of  
NMOSFET  
Other features of the device are: thermal shutdown,  
adaptive deadband control, internal digital soft start, VCC  
UVLO and Shutdown capability via the ENBUS pin.  
n Pb-free and RoHS compliant  
APPLICATIONS  
n
USB 3.0 3.3V to 5V conversion  
TYPICAL APPLICATION  
2.2uH  
VIN 3.3V  
VOUT 5V  
22uF,X5R  
2*22uF  
1uF  
14k  
10  
1uF  
308k  
PGND BST  
HDrv  
SW  
LDrv  
VCC  
68p  
FB  
COMP  
OCP  
PGOOD ENBUS RT  
22k  
AGND  
10k  
10k  
59k  
15pF  
PGOOD  
EN  
20k  
1nF  
Figure1 - Typical application of NX2158  
ORDERING INFORMATION  
Device  
NX2158CMTR  
Temperature  
0 to 70o C  
Package  
Frequency  
Pb-Free  
Yes  
3X3 MLPQ-16L 200kHz to 2MHz  
Package Marking : NX2158XXX XXX is date code. For example, 935 means that this NX2158 is  
packaged in the 35th week of 2009  
Rev.1.2  
12/30/09  
1
Microsemi  
Analog Mixed Signal Group  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
NX2158  
ABSOLUTE MAXIMUM RATINGS(NOTE1)  
VCC to GND .................................................. 6.5V  
BST to GND Voltage ...................................... 6.5V  
VIN to GND Voltage ........................................ 6.5V  
SW to GND .................................................... -2V to 6.5V  
All other pins .................................................. -0.3V to 6.5V  
Storage Temperature Range ............................. -65oC to 150oC  
Operating Junction Temperature Range ............. -40oC to 125oC  
NOTE1: Stresses above those listed in "ABSOLUTE MAXIMUM RATINGS", may cause permanent damage to  
the device. This is a stress only rating and operation of the device at these or any other conditions above those  
indicated in the operational sections of this specification is not implied.  
PACKAGE INFORMATION  
16-LEAD PLASTIC 3X3 MLPQ  
qJA » 46oC/W  
13  
16 15 14  
HDRV  
BST  
1
2
3
4
12  
FB  
11 COMP  
10 AGND  
17  
PAD  
PGND  
LDRV  
RT  
9
7
5
6
8
ELECTRICAL SPECIFICATIONS  
Unless otherwise specified, these specifications apply over VCC=3.3V, VENBUS=1.5V, VBST=5V, TA = 25oC. Low duty  
cycle pulse testing is used which keeps junction and case temperatures equal to the ambient temperature.  
PARAMETER  
Reference Voltage  
Ref Voltage  
SYM  
Test Condition  
Min  
TYP  
MAX Units  
VREF  
0.8  
0.7  
V
0.793  
0.808  
1
Ref Voltage line regulation  
VCC=3V to 5.5V  
%
Supply Voltage(VCC)  
VCC Voltage Range  
Vin  
V
Input Voltage Current(Static)  
Input Voltage Current  
(Dynamic)  
No switching,ENBUS=0V  
COMP=2.4V  
3
mA  
3.5  
mA  
Under Voltage Lockout  
VCC-Threshold  
VCC_UVLO VCC Rising  
VCC_Hyst VCC Falling  
2.8  
0.2  
V
V
2.6  
0.1  
3
VCC-Hysteresis  
0.355  
Rev.1.2  
12/30/09  
2
Microsemi  
Analog Mixed Signal Group  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
NX2158  
PARAMETER  
SYM  
Test Condition  
Min  
TYP  
MAX Units  
ENBUS  
ENBUS threshold  
ENBUS Hysteresis  
SS  
1
1.2  
0.1  
1.4  
V
V
0.05  
0.15  
Soft Start time  
Tss  
Rt=44k  
1.6  
mS  
Oscillator (Rt)  
Frequency  
FS  
Rt=44k  
Rt=44k  
640  
0.5  
70  
kHz  
V
550  
0.4  
60  
720  
0.58  
80  
Ramp-Amplitude Voltage  
LDRV Max Duty Cycle  
HDRV Min Controlable On Time  
Error Amplifiers  
VRAMP  
%
250  
nS  
Transconductance  
Input Bias Current  
Comp SD Threshold  
1500  
1800  
0.3  
2500 umho  
Ib  
100  
nA  
V
High Side Driver(CL=2200pF)  
Output Impedance , Sourcing  
Output Impedance , Sinking  
Rsource(Hdrv)  
Rsink(Hdrv)  
I=200mA  
I=200mA  
1.9  
1.7  
ohm  
ohm  
Rise Time  
Fall Time  
Deadband Time  
THdrv(Rise)  
THdrv(Fall)  
Tdead(L to Ldrv going Low to Hdrv  
14  
17  
30  
ns  
ns  
ns  
Low Side Driver (CL=2200pF)  
Output Impedance, Sourcing  
Output Impedance, Sinking  
Current  
R
source(Ldrv)  
I=200mA  
I=200mA  
1.9  
1
ohm  
ohm  
Rsink(Ldrv)  
Rise Time  
Fall Time  
Deadband Time  
TLdrv(Rise)  
TLdrv(Fall)  
Tdead(H to  
L)  
13  
12  
10  
ns  
ns  
ns  
SW going Low to Ldrv  
going High, 10% to 10%  
OCP  
OCP current  
Over temperature  
Threshold  
30  
78  
37  
50  
95  
uA  
oC  
oC  
150  
20  
Hysteresis  
PGOOD  
Pgood high rising threshold  
Power good hysteresis  
90  
5
% Vref  
%
Rev.1.2  
12/30/09  
3
Microsemi  
Analog Mixed Signal Group  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
NX2158  
PIN DESCRIPTIONS  
PIN #  
PIN SYMBOL  
PIN DESCRIPTION  
Voltage supply for the low side fet driver and internal logic circuit. A high  
frequency 1uF ceramic capacitor must be connected from this pin to the GND  
pin as close as possible.  
5
VCC  
Enable pin for the controller.  
7
ENBUS  
FB  
This pin is the error amplifier inverting input.  
12  
11  
This pin is the output of the error amplifier and together with FB pin is used to  
compensate the voltage control feedback loop. This pin is also used as a shut  
down pin. When this pin is pulled below 0.3V, both drivers are turned off and  
internal soft start is reset.  
COMP  
This pin supplies voltage to the high side driver. A high frequency  
2
BST  
ceramic capacitor of 0.1 to 1 uF must be connected from this pin to ground.  
An internal current source is flown to the OCP resistor sets the OCP voltage  
across the Rdson of the low side MOSFET. Current limit point is this voltage  
divided by the Rds-on.  
15  
OCP  
This pin is used by driver circuit and also sensing the RDSON of NMOSFET.  
14  
1
SW  
PMOS MOSFET gate driver.  
Power ground.  
HDRV  
PGND  
AGND  
LDRV  
RT  
3
Analog ground  
10  
4
NMOSFET gate driver.  
Oscillator's frequency can be set by using an external resistor from this pin to  
GND.  
7
Power good indicator.  
PAD should be connected to ground.  
Not used.  
8
PGOOD  
PAD  
17  
13,16  
NC  
Rev.1.2  
12/30/09  
4
Microsemi  
Analog Mixed Signal Group  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
NX2158  
BLOCK DIAGRAM  
PGOOD  
SS_finished  
ENBUS  
VCC  
FB  
0.9*0.8V  
1.2V  
1.25V  
0.8V  
Bias  
Generator  
BST  
UVLO  
POR  
START  
HDRV  
COMP  
0.3V  
RT  
OC  
OVP  
Driver  
Logic  
Latch  
PWM  
START  
0.8V  
VCC  
OSC  
ramp  
Digital  
start Up  
Thermal  
Shutdown  
S
R
LDRV  
Q
FB  
0.6V  
CLAMP  
1.3V  
CLAMP  
COMP  
LDRV  
START  
SW  
OCP  
GND  
VCC  
START  
Figure 2 - Simplified block diagram of the NX2158  
Rev.1.2  
12/30/09  
5
Microsemi  
Analog Mixed Signal Group  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
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