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NX2138

型号:

NX2138

描述:

单通道MOBILE PWM控制器[ SINGLE CHANNEL MOBILE PWM CONTROLLER ]

品牌:

MICROSEMI[ Microsemi ]

页数:

16 页

PDF大小:

601 K

NX2138  
SINGLE CHANNEL MOBILE PWM CONTROLLER  
PRODUCTION DATA SHEET  
Pb Free Product  
FEATURES  
DESCRIPTION  
n
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Internal boost schottky diode  
The NX2138 controller IC is a compact Buck controller  
IC with 16 lead MLPQ package designed for step down  
DC to DC converter in portable applications. It can be  
selected to operate in synchronous mode or non-syn-  
chronous mode to improve the efficiency at light  
load.Constant on time control provides fast response,  
good line regulation and nearly constant frequency un-  
der wide voltage input range. The NX2138 controller is  
optimized to convert single supply up to 24V bus volt-  
age to as low as 0.75V output voltage. Over current  
protection and FB UVLO followed by latch feature. Other  
features includes: internal boost schottky diode, 5V gate  
drive capability, power good indicator, over current pro-  
tection, over voltage protection and adaptive dead band  
control.  
Ultrasonic mode operation available  
Bus voltage operation from 4.5V to 24V  
Less than 1uA shutdown current with Enable low  
Excellent dynamic response with constant on time  
control  
Selectable between synchronous CCM mode and  
diode emulation mode to improve efficiency at  
light load  
Programmable switching frequency  
Current limit and FB UVLO with latch off  
Over voltage protection with latch off  
Power good indicator available  
Pb-free and RoHS compAlianPt PLICATIONS  
Notebook PCs and Desknotes  
Tablet PCs/Slates  
n
n
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n
n
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On board DC to DC such as  
12V to 3.3V, 2.5V or 1.8V  
n
Hand-held portable instruments  
TYPICAL APPLICATION  
4
1MEG  
16  
PGOOD  
PGOOD  
TON  
VIN 7V~22V  
1n  
100k  
2x10uF  
9
2
5V  
PVCC  
VCC  
12  
HDRV  
IRF7807  
10  
2.2  
13  
BST  
1u  
1u  
1u  
Vout 1.8V/7A  
1.5uH  
11  
SW  
2R5TPE330MC  
330uF  
8
AO4714  
LDRV  
ENSW  
/MODE  
15  
5k  
10  
1
OCSET  
VOUT  
2
NC  
NC  
10.5k  
7.5k  
14  
3
FB  
PGND  
AGND  
6
7
Figure1 - Typical application of NX2138  
ORDERING INFORMATION  
Device  
Temperature  
Package  
4X4 MLPQ-16L  
Pb-Free  
Yes  
NX2138CMTR -10o C to 100o C  
Rev. 1.6  
12/09/09  
1
NX2138  
ABSOLUTE MAXIMUM RATINGS  
VCC,PVCC to GND & BST to SW voltage ............ -0.3V to 6.5V  
TON to GND ......................................................... -0.3V to 28V  
HDRV to SW Voltage .......................................... -0.3V to 6.5V  
SW to GND ......................................................... -2V to 30V  
All other pins ........................................................ VCC+0.3V  
Storage Temperature Range ..................................-65oC to 150oC  
Operating Junction Temperature Range .................-40oC to 150oC  
ESD Susceptibility ............................................... 2kV  
CAUTION: Stresses above those listed in "ABSOLUTE MAXIMUM RATINGS", may cause permanent  
damage to the device. This is a stress only rating and operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification is not implied.  
PACKAGE INFORMATION  
4x4 16-LEAD PLASTIC MLPQ  
qJA » 46oC/W  
13  
16 15 14  
HDRV  
SW  
1
2
3
4
VO  
12  
11  
10  
9
VCC  
FB  
17  
PAD  
OCSET  
PVCC  
PGOOD  
7
5
8
6
ELECTRICAL SPECIFICATIONS  
Unless otherwise specified, these specifications apply over Vcc =5V, VIN=15V and TA =25oC, unless otherwise  
specified.  
PARAMETER  
SYM  
Test Condition  
Min  
TYP  
MAX Units  
VIN  
V
recommended voltage range  
Shut down current  
4.5  
24  
uA  
ENSW=GND  
1
VCC,PVCC Supply  
Input voltage range  
Vin  
4.5  
5.5  
V
Operating quiescent current  
Shut down current  
No switching, ENSW=5V  
ENSW=GND  
1.6  
1
mA  
uA  
Rev. 1.6  
12/09/09  
2
NX2138  
PARAMETER  
VCC UVLO  
SYM  
Test Condition  
Min  
TYP  
MAX Units  
Under-voltage Lockout  
threshold  
VCC_UVLO  
3.9  
3.7  
4.1  
3.9  
4.5  
4.3  
V
V
Falling VCC threshold  
ON and OFF time  
TON operating current  
VIN=15V, Rton=1Mohm  
VIN=9V,VOUT=0.75V,Rton=  
1Mohm  
15  
uA  
ON -time  
Minimum off time  
312  
380  
390  
590  
468  
800  
ns  
ns  
FB voltage  
Vref  
Internal FB voltage  
Input bias current  
Line regulation  
OUTPUT voltage  
0.739  
-1  
0.75  
0.761  
100  
1
V
nA  
%
VCC from 4.5 to 5.5  
ENSW/MODE=GND  
Output range  
VOUT shut down discharge  
resistance  
0.75  
3.3  
V
30  
ohm  
ms  
Soft start time  
PGOOD  
1.5  
Power good high rising  
threshold  
90  
% Vref  
PGOOD propagation delay  
filter  
NOTE1  
NOTE1  
2
5
us  
%
Power good hysteresis  
Pgood output switch  
impedance  
13  
1
ohm  
uA  
Pgood leakage current  
SW zero cross comparator  
Offset voltage  
HighNSide Driver  
(CL=3300pF)  
5
mV  
Output Impedance , Sourcing Rsource(Hdrv)  
Current  
I=200mA  
I=200mA  
1.5  
1.5  
ohm  
ohm  
Output Impedance , Sinking  
Current  
Rsink(Hdrv)  
Rise Time  
Fall Time  
Deadband Time  
THdrv(Rise)  
THdrv(Fall)  
Tdead(L to Ldrv going Low to Hdrv going  
10% to 90%  
90% to 10%  
50  
50  
30  
ns  
ns  
ns  
H)  
High, 10% to 10%  
Low Side Driver  
(CL=3300pF)  
Output Impedance, Sourcing  
Current  
Output Impedance, Sinking  
Current  
Rsource(Ldrv)  
Rsink(Ldrv)  
I=200mA  
I=200mA  
1.5  
0.5  
ohm  
ohm  
Rise Time  
Fall Time  
Deadband Time  
TLdrv(Rise)  
TLdrv(Fall)  
Tdead(H to SW going Low to Ldrv going  
L) High, 10% to 10%  
10% to 90%  
90% to 10%  
50  
50  
10  
ns  
ns  
ns  
Rev. 1.6  
12/09/09  
3
NX2138  
PARAMETER  
ENSW/MODE threshold and  
bias current  
SYM  
Test Condition  
Min  
TYP  
MAX Units  
80%  
VCC  
60%  
VCC  
VCC+0  
.3V  
80%  
VCC  
60%  
VCC  
PFM/Non Synchronous Mode  
Ultrasonic Mode  
V
V
Leave it open or use limits in  
spec  
Synchronous Mode  
Shutdown mode  
2
0
V
V
0.8  
ENSW/MODE=VCC  
ENSW/MODE=GND  
5
uA  
uA  
Input bias current  
Current Limit  
Ocset setting current  
Over temperature  
Threshold  
-5  
20  
24  
28  
uA  
oC  
oC  
155  
15  
Hysteresis  
Under voltage  
FB threshold  
Over voltage  
70  
%Vref  
%Vref  
mV  
Over voltage tripp point  
125  
500  
Internal Schottky Diode  
Forward voltage drop  
forward current=50mA  
Rev. 1.6  
12/09/09  
4
NX2138  
PIN DESCRIPTIONS  
PIN NUMBER PIN SYMBOL  
PIN DESCRIPTION  
This pin is directly connected to the output of the switching regulator and  
senses the VOUT voltage. An internal MOSFET discharges the output during  
turn off.  
1
VOUT  
This pin supplies the internal 5V bias circuit. A 1uF X7R ceramic capacitor is  
placed as close as possible to this pin and ground pin.  
2
3
VCC  
FB  
This pin is the error amplifiers inverting input. This pin is connected via  
resistor divider to the output of the switching regulator to set the output DC  
voltage from 0.75V to 3.3V.  
PGOOD indicator for switching regulator. It requires a pull up resistor to Vcc  
or lower voltage. When FB pin reaches 90% of the reference voltage  
PGOOD transitions from LO to HI state.  
4
PGOOD  
5
6
7
8
9
NC  
Not used.  
AGND  
PGND  
LDRV  
PVCC  
Analog ground.  
Power ground.  
Low side gate driver output.  
Provide the voltage supply to the lower MOSFET drivers. Place a high  
frequency decoupling capacitor 1uF X5R to this pin.  
10  
OCSET  
This pin is connected to the drain of the external low side MOSFET and is  
the input of over current protection(OCP) comparator. An internal current  
source is flown to the external resistor which sets the OCP voltage across  
the Rdson of the low side MOSFET.  
11  
12  
13  
SW  
HDRV  
BST  
NC  
This pin is connected to source of high side FETs and provide return path for  
the high side driver. It is also the input of zero current sensing comparator.  
High side gate driver output.  
This pin supplies voltage to high side FET driver. A high freq 1uF X7R  
ceramic capacitor and 2.2ohm resistor in series are recommended to be  
placed as close as possible to and connected to this pin and SW pin.  
14  
15  
Not used.  
ENSW/  
MODE  
Switching converter enable input. Connect to VCC for PFM/Non synchronous  
mode, connected to an external resistor divider equals to 70%VCC for ultra-  
sonic, connected to GND for shutdown mode, floating or connected to 2V for  
the synchronous mode.  
16  
17  
TON  
PAD  
VIN sensing input. A resistor connects from this pin to VIN will set the fre-  
quency. A 1nF capacitor from this pin to GND is recommended to ensure the  
proper operation.  
Used as thermal pad. Connect this pad to ground plane through multiple vias.  
Rev. 1.6  
12/09/09  
5
NX2138  
BLOCK DIAGRAM  
VCC(2)  
Bias  
4.3/4.1  
Disable_B  
POR  
ODB  
BST(13)  
Thermal  
shutdown  
VIN  
TON(16)  
VIN  
start  
ON time  
pulse  
HDRV(12)  
genearation  
HD  
VOUT  
FET Driver  
HD_IN  
R
Q
S
VOUT  
FB(3)  
SW(11)  
1.8V  
5V  
PVCC(9)  
LDRV(8)  
Mini offtime  
400ns  
OCP_COMP  
PGND(7)  
VREF=0.75V  
start  
POR  
HD  
Diode  
emulation  
soft start  
FBUVLO_latch  
VCC  
1M  
ENSW  
/MODE(15)  
Disable  
PFM_nonultrasonic  
Sync  
MODE  
1M  
SELECTION  
OCSET(10)  
FB  
1.25*Vref/0.7VREF  
OVP  
OCP_COMP  
AGND(6)  
FB  
FBUVLO_latch  
VOUT(1)  
0.7*Vref  
VOUT  
SS_finished  
start  
PGOOD(4)  
0.9*Vref  
Figure 2 - Simplified block diagram of the NX2138  
Rev. 1.6  
12/09/09  
6
NX2138  
TYPICAL APPLICATION  
(VIN=7V to 22V, VOUT=1.8V/7A)  
R4  
1MEG  
4
PGOOD  
PGOOD  
16  
TON  
C3  
1n  
VIN 7V~22V  
R1  
100k  
CI1  
2x10uF  
9
2
PVCC  
VCC  
5V  
M1  
12  
13  
R2  
10  
HDRV  
BST  
IRF7807  
Lo  
R8 2.2  
C1  
1u  
C2  
1u  
C4  
1u  
Vout 1.8V/7A  
CO1  
2R5TPE330MC  
330uF  
1.5uH  
11  
8
SW  
M2  
AO4714  
LDRV  
ENSW  
/MODE  
15  
R3  
2.2  
C5  
1.5n  
R5  
5k  
10  
1
OCSET  
VOUT  
2
NC  
NC  
R6  
10.5k  
14  
3
FB  
R7  
7.5k  
PGND  
AGND  
6
7
Figure 3 - Demo board schematic  
Rev. 1.6  
12/09/09  
7
NX2138  
Bill of Materials  
Item  
1
2
3
4
5
6
7
8
Quantity  
Reference  
Value  
10uF/X5R/25V  
2R5TPE330MC  
1uF  
1nF  
1.5nF  
DO5010H-152  
IRF7807  
AO4714  
100k  
10  
2.2  
Manufacture  
SANYO  
2
1
2
2
1
1
1
1
1
1
2
1
1
1
1
1
CI1  
CO1  
C1,C2,C4  
C3  
C5  
Lo  
M1  
M2  
R1  
R2  
R3,R8  
R4  
R5  
COILCRAFT  
IR  
IR  
9
10  
11  
12  
13  
14  
15  
16  
1M  
5k  
10.5k  
7.5k  
R6  
R7  
U1  
NX2138  
NEXSEM INC.  
Rev. 1.6  
12/09/09  
8
NX2138  
Demoboard waveforms  
Fig.4 Startup (CH2 1.8V OUTPUT, CH3 PGOOD)  
Fig.5 Turn off (CH2 1.8V OUTPUT, CH3 PGOOD)  
Fig.8 Start into short (CH3 VOUT, CH4 OUTPUT  
CURRENT)  
Fig.7 Output transient in PFM mode (CH1 SW, CH2  
1.8V OUTPUT AC, CH4 OUTPUT CURRENT)  
Fig. 9 Output ripple at full load (CH1 SW, CH2 1.8V  
OUTPUT AC, CH4 OUTPUT CURRENT)  
Fig. 10 Output ripple at light load in PFM mode(CH1  
SW, CH2 1.8V OUTPUT AC)  
Rev. 1.6  
12/09/09  
9
NX2138  
Demoboard waveforms(Cont')  
Fig. 12 Dynamic response in synchronous mode  
(CH2 1.8V OUTPUT AC, CH4 OUTPUT CURRENT)  
Fig. 11 Output ripple at no load in synchronous mode  
(CH1 SW, CH2 1.8V OUTPUT AC, CH4 OUTPUT  
CURRENT)  
Fig. 13 Dynamic response in synchronous mode  
(CH2 1.8V OUTPUT AC, CH4 OUTPUT CURRENT)  
Fig. 14 Dynamic response in PFM mode  
(CH2 1.8V OUTPUT AC, CH4 OUTPUT CURRENT)  
VIN=12V, VOUT=1.8V  
95.00%  
90.00%  
85.00%  
80.00%  
75.00%  
70.00%  
65.00%  
60.00%  
55.00%  
50.00%  
10  
100  
1000  
10000  
OUTPUT CURRENT(mA)  
Fig. 15 Dynamic response in PFM mode  
(CH2 1.8V OUTPUT AC, CH4 OUTPUT CURRENT)  
Fig. 16 Output efficiency  
Rev. 1.6  
12/09/09  
10  
NX2138  
FS is around 220kHz.  
APPLICATION INFORMATION  
Symbol Used In Application Information:  
Output Inductor Selection  
VIN  
- Input voltage  
- Output voltage  
- Output current  
The value of inductor is decided by inductor ripple  
current and working frequency. Larger inductor value  
normally means smaller ripple current. However if the  
inductance is chosen too large, it brings slow response  
and lower efficiency. The ripple current is a design free-  
dom which can be decided by design engineer accord-  
ing to various application requirements. The inductor  
value can be calculated by using the following equa-  
tions:  
VOUT  
IOUT  
VRIPPLE - Output voltage ripple  
- Working frequency  
FS  
IRIPPLE - Inductor current ripple  
Design Example  
The following is typical application for NX2138,  
the schematic is figure 1.  
VIN = 7 to 22V  
V -V  
´ T  
ON  
(
)
IN  
OUT  
LOUT  
=
IRIPPLE  
VOUT=1.8V  
...(3)  
IRIPPLE =k ´ IOUTPUT  
FS=220kHz  
IOUT=7A  
where k is percentage of output current.  
In this example, inductor from COILCRAFT  
DO5010H-152 with L=1.5uH is chosen.  
VRIPPLE <=60mV  
VDROOP<=60mV @ 3A step  
Current Ripple is recalculated as below:  
On_Time and Frequency Calculation  
The constant on time control technique used in  
NX2138 delivers high efficiency, excellent transient dy-  
namic response, make it a good candidate for step down  
notebook applications.  
(V -VOUT )´ TON  
IN  
IRIPPLE  
=
=
LOUT  
(22V-1.8V)´ 372nS  
1.5uH  
=5A  
...(4)  
An internal one shot timer turns on the high side  
driver with an on time which is proportional to the input  
supply VIN as well inversely proportional to the output  
voltage VOUT. During this time, the output inductor  
charges the output cap increasing the output voltage  
by the amount equal to the output ripple. Once the  
timer turns off, the Hdrv turns off and cause the output  
voltage to decrease until reaching the internal FB volt-  
age of 0.75V on the PFM comparator. At this point the  
comparator trips causing the cycle to repeat itself. A  
minimum off time of 400nS is internally set.  
Output Capacitor Selection  
Output capacitor is basically decided by the  
amount of the output voltage ripple allowed during  
steady state(DC) load condition as well as specifica-  
tion for the load transient. The optimum design may  
require a couple of iterations to satisfy both conditions.  
Based on DC Load Condition  
The amount of voltage ripple during the DC load  
condition is determined by equation(5).  
DIRIPPLE  
The equation setting the On Time is as follows:  
DVRIPPLE = ESR´ DIRIPPLE  
+
...(5)  
8´ F ´ COUT  
S
4.45´ 10- 12 ´ RTON ´ VOUT  
TON =  
...(1)  
...(2)  
Where ESR is the output capacitors' equivalent  
series resistance,COUT is the value of output capaci-  
tors.  
V - 0.5V  
IN  
VOUT  
V ´ TON  
F =  
S
IN  
Typically POSCAP is recommended to use in  
NX2139's applications. The amount of the output volt-  
age ripple is dominated by the first term in equation(5)  
In this application example, the RTON is chosen  
to be 1Mohm, when VIN=22V, the TON is 372nS and  
Rev. 1.6  
12/09/09  
11  
NX2138  
and the second term can be neglected.  
For this example, one POSCAP 2R5TPE330MC  
is chosen as output capacitor, the ESR and inductor  
current typically determines the output voltage ripple.  
When VIN reach maximum voltage, the output volt-  
age ripple is in the worst case.  
ESR ´ COUT ´ VOUT ESRE ´ CE ´ VOUT  
Lcrit  
=
=
...(10)  
DIstep  
DIstep  
where ESRE and CE represents ESR and capaci-  
tance of each capacitor if multiple capacitors are used  
in parallel.  
The above equation shows that if the selected  
output inductor is smaller than the critical inductance,  
the voltage droop or overshoot is only dependent on  
the ESR of output capacitor. For low frequency ca-  
pacitor such as electrolytic capacitor, the product of  
DVRIPPLE  
DIRIPPLE  
60mV  
5A  
ESRdesire  
=
=
= 12mW  
...(6)  
If low ESR is required, for most applications, mul-  
tiple capacitors in parallel are needed. The number of  
output capacitor can be calculate as the following:  
ESR and capacitance is high and L £ Lcrit is true. In  
that case, the transient spec is mostly like to depen-  
dent on the ESR of capacitor.  
E S R E ´ DIR IPPLE  
N =  
...(7)  
D VR IPPLE  
Most case, the output capacitor is multiple ca-  
pacitor in parallel. The number of capacitor can be cal-  
culated by the following  
12m5A  
N =  
60mV  
N =1  
ESRE ´ DIstep  
VOUT  
The number of capacitor has to be round up to a  
integer. Choose N =1.  
N =  
where  
+
´ t 2  
...(11)  
DV  
2´ L´ CE ´ DV  
tran  
tran  
Based On Transient Requirement  
Typically, the output voltage droop during tran-  
sient is specified as  
0
if L £ Lcrit  
ì
ï
L´ DI  
t =  
í
ï
î
step  
...(12)  
- ESRE ´ CE  
if L ³ Lcrit  
VOUT  
DV  
< DV  
@step load I  
tran  
droop  
STEP  
During the transient, the voltage droop during the  
transient is composed of two sections. One section is  
dependent on the ESR of capacitor, the other section  
is a function of the inductor, output capacitance as well  
as input, output voltage. For example, for the over-  
shoot when load from high load to light load with a  
DISTEP transient load, if assuming the bandwidth of sys-  
tem is high enough, the overshoot can be estimated  
as the following equation.  
For example, assume voltage droop during tran-  
sient is 60mV for 3A load step.  
If one POSCAP 2R5TPE330MC(330uF, 12mohm  
ESR) is used, the crticial inductance is given as  
ESRE ´ CE ´ V  
OUT  
Lcrit  
=
=
DIstep  
12mW´ 3300mF´ 1.8V  
= 23.76mH  
3A  
VOUT  
DVovershoot = ESR ´ DIstep  
+
´ t 2  
The selected inductor is 1.5uH which is smaller  
than critical inductance. In that case, the output volt-  
age transient mainly dependent on the ESR.  
...(8)  
2´ L´ COUT  
where  
is the a function of capacitor,etc.  
t
number of capacitor is  
0
if L £ Lcrit  
ì
ï
L´ DI  
t =  
ESRE ´ DIstep  
N =  
í
ï
î
step  
...(9  
- ESR ´ COUT  
if L ³ Lcrit  
VOUT  
DV  
tran  
12m3A  
where  
=
60mV  
= 0.6  
Choose N=1.  
Rev. 1.6  
12/09/09  
12  
NX2138  
Based On Stability Requirement  
and power dissipation. The main consideration is the  
ESR of the output capacitor can not be chosen power loss contribution of MOSFETs to the overall con-  
too low which will cause system unstable. The zero verter efficiency. In this application, one IRF7807 for  
caused by output capacitor's ESR must satisfy the re- high side and one AO4714 with integrated schottky di-  
quirement as below:  
ode for low side are used.  
There are two factors causing the MOSFET  
power loss:conduction loss, switching loss.  
Conduction loss is simply defined as:  
F
1
SW  
F
=
£
ESR  
...(13)  
2´ p ´ ESR´ COUT  
4
Besides that, ESR has to be bigger enough so  
that the output voltage ripple can provide enough volt-  
age ramp to error amplifier through FB pin. If ESR is  
too small, the error amplifier can not correctly dectect  
the ramp, high side MOSFET will be only turned off for  
minimum time 400nS. Double pulsing and bigger out-  
put ripple will be observed. In summary, the ESR of  
output capacitor has to be big enough to make the sys-  
tem stable, but also has to be small enough to satify  
the transient and DC ripple requirements.  
P
HCON =IOUT2 ´ D´ RDS(ON) ´ K  
LCON=IOUT2 ´ (1- D)´ RDS(ON) ´ K  
PTOTAL =P + P  
P
...(15)  
HCON  
LCON  
where the RDS(ON) will increases as MOSFET junc-  
tion temperature increases, K is RDS(ON) temperature  
dependency. As a result, RDS(ON) should be selected  
for the worst case. Conduction loss should not exceed  
package rating or overall system thermal budget.  
Switching loss is mainly caused by crossover  
conduction at the switching transition. The total  
switching loss can be approximated.  
Input Capacitor Selection  
Input capacitors are usually a mix of high fre-  
quency ceramic capacitors and bulk capacitors. Ce-  
ramic capacitors bypass the high frequency noise, and  
bulk capacitors supply switching current to the  
MOSFETs. Usually 1uF ceramic capacitor is chosen  
to decouple the high frequency noise.The bulk input  
capacitors are decided by voltage rating and RMS cur-  
rent rating. The RMS current in the input capacitors  
can be calculated as:  
1
PSW  
=
´ V ´ IOUT ´ TSW ´ F  
IN S  
...(16)  
2
where IOUT is output current, TSW is the sum of TR  
and TF which can be found in mosfet datasheet, and  
FS is switching frequency. Swithing loss PSW is fre-  
quency dependent.  
Also MOSFET gate driver loss should be consid-  
ered when choosing the proper power MOSFET.  
MOSFET gate driver loss is the loss generated by dis-  
charging the gate capacitor and is dissipated in driver  
circuits.It is proportional to frequency and is defined  
as:  
IRMS = IOUT  
´ D ´ 1-D  
...(14)  
D = TON ´ FS  
When VIN = 22V, VOUT=1.8V, IOUT=7A, the result of  
input RMS current is 1.9A.  
P
= (QHGATE ´ VHGS + QLGATE ´ VLGS )´ FS  
...(17)  
gate  
For higher efficiency, low ESR capacitors are  
recommended. One 10uF/X5R/25V and two 4.7uF/  
X5R/25V ceramic capacitors are chosen as input  
capacitors.  
where QHGATE is the high side MOSFETs gate  
charge,QLGATE is the low side MOSFETs gate  
charge,VHGS is the high side gate source voltage, and  
VLGS is the low side gate source voltage.  
This power dissipation should not exceed maxi-  
mum power dissipation of the driver device.  
Power MOSFETs Selection  
The NX2138 requires at least two N-Channel  
power MOSFETs. The selection of MOSFETs is based  
on maximum drain source voltage, gate source volt-  
age, maximum current rating, MOSFET on resistance  
Output Voltage Calculation  
Output voltage is set by reference voltage and  
external voltage divider. The reference voltage is fixed  
Rev. 1.6  
12/09/09  
13  
NX2138  
at 0.75V. The divider consists of two ratioed resistors efficiency.  
so that the output voltage applied at the Fb pin is 0.75V  
when the output voltage is at the desired value.  
In CCM mode, inductor current zero-crossing  
sensing is disabled, low side MOSFET keeps on even  
The following equation applies to figure 11, which when inductor current becomes negative. In this way  
shows the relationship between VOUT , VREF and volt- the efficiency is lower compared with PFM mode at  
age divider.  
light load, but frequency will be kept constant.  
Over Current Protection  
Vout  
Over current protection for NX2138 is achieved  
by sensing current through the low side MOSFET. An  
typical internal current source of 24uA flows through  
an external resistor connected from OCSET pin to SW  
node sets the over current protection threshold. When  
synchronous FET is on, the voltage at node SW is given  
as  
R2  
R1  
Fb  
Vref  
VSW =-IL ´ RDSON  
Figure 17 - Voltage Divider  
The voltage at pin OCSET is given as  
IOCP ´ ROCP +VSW  
R 2 ´ VREF  
When the voltage is below zero, the over current  
occurs as shown in figure below.  
R1=  
...(18)  
VOUT -VREF  
where R2 is part of the compensator, and the value  
of R1 value can be set by voltage divider.  
vbus  
I
OCP  
24uA  
Mode Selection  
OCP  
R
NX2138 can be operated in PFM mode, ultrasonic  
PFM mode, CCM mode and shutdown mode by apply-  
ing different voltage on ENSW/MODE pin.  
SW  
OCP  
OCP  
comparator  
When VCC applied to ENSW/MODE pin, NX2138  
is In PFM mode. The low side MOSFET emulates the  
function of diode when discontinuous continuous mode  
happens, often in light load condition. During that time,  
the inductor current crosses the zero ampere border  
and becomes negative current. When the inductor cur-  
rent reaches negative territory, the low side MOSFET  
is turned off and it takes longer time for the output volt-  
age to drop, the high side MOSFET waits longer to be  
turned on. At the same time, no matter light load and  
heavy load, the on time of high side MOSFET keeps  
the same. Therefore the lightier load, the lower the  
switching frequency will be. In ultrosonic PFM mode,  
the lowest frequency is set to be 25kHz to avoid audio  
frequency modulation. This kind of reduction of fre-  
quency keeps the system running at light light with high  
Figure 18 - Over Voltage Protection  
The over current limit can be set by the following  
equation.  
ISET = IOCP ´ ROCP/RDSON  
If the low side MOSFET RDSON=10mW at the OCP  
occuring moment, and the current limit is set at 12A,  
then  
I
SET ´ RDSON 12A ´ 10mW  
ROCP  
=
=
= 5kW  
IOCP  
24uA  
Choose ROCP=5kW  
Power Good Output  
Power good output is open drain output, a pull  
up resistor is needed. Typically when softstart is  
Rev. 1.6  
12/09/09  
14  
NX2138  
finised and FB pin voltage is over 90% of VREF, the  
PGOOD pin is pulled to high after a 1.6ms delay.  
should be close to each other as possible. This helps  
to reduce the EMI radiated by the power loop due to  
the high switching currents through them.  
Smart Over Output Voltage Protection  
Active loads in some applications can leak cur-  
rent from a higher voltage than VOUT, cause output volt-  
age to rise. When the FB pin voltage is sensed over  
112% of VREF, the high side MOSFET will be turned off  
and low side MOSFET will be turned on to discharge  
the VOUT. NX2138 resumes its switching operation after  
2. Low ESR capacitor which can handle input  
RMS ripple current and a high frequency decoupling  
ceramic cap which usually is 1uF need to be practi-  
cally touching the drain pin of the upper MOSFET, a  
plane connection is a must.  
3. The output capacitors should be placed as close  
as to the load as possible and plane connection is re-  
quired.  
FB pin voltage drops to VREF  
.
If FB pin voltage keeps rising and is sensed over  
125% of VREF, the low side MOSFET will be latched to  
be on to discharge the output voltage and over voltage  
protection is triggered. To resume the switching opera-  
tion, resetting voltage on pin VCC or pin EN is neces-  
sary.  
4. Drain of the low-side MOSFET and source of  
the high-side MOSFET need to be connected thru a  
plane and as close as possible. A snubber needs to be  
placed as close to this junction as possible.  
5. Source of the lower MOSFET needs to be con-  
nected to the GND plane with multiple vias. One is not  
enough. This is very important. The same applies to  
the output capacitors and input capacitors.  
6. Hdrv and Ldrv pins should be as close to  
MOSFET gate as possible. The gate traces should be  
wide and short. A place for gate drv resistors is needed  
to fine tune noise if needed.  
Under Output Voltage Protection  
Typically when the FB pin voltage is under 70%  
of VREF, the high side and low side MOSFET will be  
turned off. To resume the switching operation, VCC or  
ENSW has to be reset.  
7. Vcc capacitor, BST capacitor or any other by-  
passing capacitor needs to be placed first around the  
IC and as close as possible. The capacitor on comp to  
GND or comp back to FB needs to be place as close to  
the pin as well as resistor divider.  
Layout Considerations  
The layout is very important when designing high  
frequency switching converters. Layout will affect noise  
pickup and can cause a good design to perform with  
less than expected results.  
8. The output sense line which is sensing output  
back to the resistor divider should not go through high  
frequency signals, should be kept away from the in-  
ductor and other noise sources. The resistor divider  
must be located as close as possible to the FB pin of  
the device.  
There are two sets of components considered in  
the layout which are power components and small sig-  
nal components. Power components usually consist of  
input capacitors, high-side MOSFET, low-side  
MOSFET, inductor and output capacitors. A noisy en-  
vironment is generated by the power components due  
to the switching power. Small signal components are  
connected to sensitive pins or nodes. A multilayer lay-  
out which includes power plane, ground plane and sig-  
nal plane is recommended .  
9. All GNDs need to go directly thru via to GND  
plane.  
10. In multilayer PCB, separate power ground  
and analog ground. These two grounds must be con-  
nected together on the PC board layout at a single point.  
The goal is to localize the high current path to a sepa-  
rate loop that does not interfere with the more sensi-  
tive analog control function.  
Layout guidelines:  
1. First put all the power components in the top  
layer connected by wide, copper filled areas. The input  
capacitor, inductor, output capacitor and the MOSFETs  
Rev. 1.6  
12/09/09  
15  
NX2138  
4x4 16 PIN MLPQ OUTLINE DIMENSIONS  
NOTE: ALL DIMENSIONS ARE DISPLAYED IN MILLIMETERS.  
Rev. 1.6  
12/09/09  
16  
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