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2SK2390

型号：

2SK2390

描述：

硅N沟道MOS FET[ Silicon N-Channel MOS FET ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

9 页

PDF大小：

68 K

下载PDF手册
2SK2390  
Silicon N-Channel MOS FET  
November 1996  
Application  
High speed power switching  
Features  
•
•
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
4 V gate drive device can be driven from 5 V source  
Suitable for Switching regulator, DC-DC converter  
Avalanche ratings  
Outline  
TO-220CFM  
1
D
2
3
1. Gate  
G
2. Drain  
3. Source  
S
2SK2390  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
60  
VGSS  
±20  
V
ID  
12  
A
1
Drain peak current  
Body to drain diode reverse drain current  
Avalanche current  
ID(pulse)  
IDR  
IAP*3  
EAR*3  
*
48  
A
12  
A
12  
A
Avalanche energy  
12  
mJ  
W
°C  
°C  
Channel dissipation  
Channel temperature  
Storage temperature  
Pch*2  
20  
Tch  
150  
Tstg  
–55 to +150  
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25 °C  
3. Value at Tch = 25 °C, Rg ≥ 50 Ω  
2
2SK2390  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
60  
—
—
V
ID = 10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
—
—
1.0  
—
—
—
—
±10  
250  
2.25  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = 50 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
resistance  
0.075 0.09  
Ω
ID = 6 A  
VGS = 10 V*1  
—
4
0.11  
8
0.15  
—
Ω
ID = 6 A  
VGS = 4 V*1  
Forward transfer admittance  
|yfs|  
S
ID = 6 A  
VDS = 10 V*1  
Input capacitance  
Ciss  
—
—
—
—
—
—
—
—
450  
240  
60  
—
—
—
—
—
—
—
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V  
VGS = 0  
Output capacitance  
Coss  
Reverse transfer capacitance Crss  
f = 1 MHz  
ID = 6 A  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
10  
55  
VGS = 10 V  
RL = 5 Ω  
Turn-off delay time  
Fall time  
100  
70  
Body to drain diode forward  
voltage  
VDF  
1.05  
IF = 12 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
—
95  
—
ns  
IF = 12 A, VGS = 0,  
diF / dt = 50 A / µs  
Note 1. Pulse Test  
3
2SK2390  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
40  
30  
20  
10  
200  
100  
50  
20  
10  
5
Operation in  
this area is  
2
1
limited by R  
DS(on)  
0.5  
0.2  
Ta = 25 °C  
2
0
50  
100  
150  
200  
1
5
10 20  
50 100  
(V)  
Drain to Source Voltage  
V
DS  
Case Temperature Tc (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
= 10 V  
20  
16  
12  
8
20  
16  
12  
8
10 V  
6 V  
5 V  
Pulse Test  
V
DS  
4 V  
Pulse Test  
3.5 V  
3 V  
Tc = 75°C  
25°C  
–25°C  
2
4
2.5 V  
= 2 V  
4
V
GS  
0
2
4
6
8
10  
0
4
6
8
10  
Drain to Source Voltage  
V
(V)  
DS  
Gate to Source Voltage  
V
(V)  
GS  
4
2SK2390  
Static Drain to Source on State Resistance  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
vs. Drain Current  
1
2.0  
1.6  
1.2  
0.8  
0.4  
Pulse Test  
Pulse Test  
0.5  
I
= 15 A  
D
0.2  
0.1  
V
GS  
= 4 V  
10 V  
10 A  
5 A  
0.05  
0.02  
0.01  
1
2
5
10 20  
50 100  
(A)  
0
2
4
6
8
10  
Gate to Source Voltage  
V
(V)  
GS  
Drain Current  
I
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
0.5  
20  
10  
5
Pulse Test  
0.4  
0.3  
0.2  
0.1  
Tc = –25 °C  
75 °C  
I
= 15 A  
D
25 °C  
2
1
10 A  
V
= 4 V  
GS  
5 A  
0.5  
V
= 10 V  
DS  
5 A, 10 A, 15 A  
Pulse Test  
10 V  
40  
0.2  
0.2  
0
0.5  
1
2
5
10 20  
–40  
0
80  
120  
160  
Drain Current I (A)  
Case Temperature Tc (°C)  
D
5
2SK2390  
Typical Capacitance vs.  
Drain to Source Voltage  
Body to Drain Diode Reverse  
Recovery Time  
1000  
500  
500  
Ciss  
200  
100  
50  
Coss  
200  
100  
50  
Crss  
20  
20  
10  
V
= 0  
GS  
10  
5
di/dt = 50 A/µs  
f = 1 MHz  
V
= 0, Ta = 25°C  
GS  
0
10  
20  
30  
40  
50  
0.1 0.3  
1
3
10  
30  
(A)  
100  
Reverse Drain Current  
I
DR  
Drain to Source Voltage V  
(V)  
DS  
Switching Characteristics  
= 10 V, V = 30 V  
Dynamic Input Characteristics  
= 10 V  
500  
100  
80  
60  
40  
20  
20  
16  
12  
8
V
GS  
DD  
PW = 5 µs, duty < 1 %  
200  
100  
50  
V
t
DD  
d(off)  
25 V  
50 V  
V
GS  
t
f
V
DS  
t
I
= 15 A  
r
D
20  
10  
5
t
d(on)  
V
= 50 V  
25 V  
4
DD  
10 V  
0
40  
5
0.2  
0.5  
1
2
10  
(A)  
20  
0
8
16  
24  
32  
Drain Current  
I
D
Gate Charge Qg (nc)  
6
2SK2390  
Reverse Drain Current vs.  
Souece to Drain Voltage  
Maximun Avalanche Energy vs.  
Channel Temperature Derating  
20  
16  
12  
8
20  
16  
12  
8
Pulse Test  
I
V
= 12 A  
= 25 V  
AP  
DD  
duty < 0.1 %  
Ω
Rg > 50  
10 V  
5 V  
V
= 0, –5 V  
GS  
4
4
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
(V)  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage  
V
SD  
Channel Temperature Tch (°C)  
Avalanche Test Circuit and Waveform  
1
V
DSS  
2
E
=
• L • I  
•
AP  
AR  
V
– V  
DD  
DSS  
2
L
V
DS  
Monitor  
I
AP  
V
(BR)DSS  
Monitor  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
15 V  
50Ω  
V
DD  
0
7
2SK2390  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 6.25 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
10%  
50Ω  
= 30 V  
90%  
tr  
90%  
td(off)  
td(on)  
t
f
8
2SK2390  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part  
of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any  
other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the  
examples described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party  
or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL  
APPLICATIONS.  
Hitachi, Ltd.  
Semiconductor & IC Div.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan  
Tel: Tokyo (03) 3270-2111  
Fax: (03) 3270-5109  
For further information write to:  
Hitachi America, Ltd.  
Semiconductor & IC Div.  
2000 Sierra Point Parkway  
Brisbane, CA. 94005-1835  
U S A  
Hitachi Europe GmbH  
Electronic Components Group  
Continental Europe  
Dornacher Straße 3  
D-85622 Feldkirchen  
München  
Hitachi Europe Ltd.  
Electronic Components Div.  
Northern Europe Headquarters  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 0104  
Tel: 535-2100  
Tel: 415-589-8300  
Fax: 535-1533  
Fax: 415-583-4207  
Tel: 089-9 91 80-0  
Fax: 089-9 29 30 00  
Berkshire SL6 8YA  
United Kingdom  
Hitachi Asia (Hong Kong) Ltd.  
Unit 706, North Tower,  
World Finance Centre,  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel: 0628-585000  
Fax: 0628-778322  
Tel: 27359218  
Fax: 27306071  
9
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