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2SK2570ZL-TR-E

型号：

2SK2570ZL-TR-E

描述：

硅N沟道MOS FET低频电源开关[ Silicon N Channel MOS FET Low Frequency Power Switching ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

7 页

PDF大小：

173 K

下载PDF手册
2SK2570  
Silicon N Channel MOS FET  
Low Frequency Power Switching  
REJ03G1019-0200  
(Previous: ADE-208-574)  
Rev.2.00  
Sep 07, 2005  
Features  
•
Low on-resistance  
DS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA)  
R
•
•
2.5 V gate drive devices.  
Small package (MPAK)  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
3
1
2
1. Source  
2. Gate  
3. Drain  
S
Note: Marking is “ZL–”  
Rev.2.00 Sep 07, 2005 page 1 of 6  
2SK2570  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
Ratings  
20  
Unit  
V
V
VGSS  
±10  
ID  
0.2  
A
1
Drain peak current  
ID(pulse)  
*
0.4  
A
Channel dissipation  
Pch  
150  
mW  
°C  
°C  
Channel temperature  
Storage temperature  
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
20  
±10  
—
Typ  
—
Max  
Unit  
V
Test Conditions  
ID = 10 µA, VGS = 0  
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
V(BR)DSS  
V(BR)GSS  
IDSS  
—
—
—
IG = ±100 µA, VDS = 0  
VDS = 20 V, VGS = 0  
—
1
IGSS  
—
—
= ±6.5 V, VDS = 0  
0 µA, VDS = 5 V  
= 100 mA, VGS = 4 V *2  
ID = 40 mA, VGS = 2.5 V *2  
ID = 100 mA, VDS = 10 V *2  
VGS(off)  
RDS(on)  
0.5  
—
—
Static drain to source on state  
resistance  
0.
—
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
td(o
0.22  
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS = 10 V, VGS = 0,  
f = 1 MHz  
—
VGS = 5 V, ID = 100 mA,  
RL = 100 Ω  
—
Turn-off delay time  
Fall time  
140  
—
—
Notes: 2. Pulse test  
Rev.2.00 Sep 07, 2005 page 2 of 6  
2SK2570  
Main Characteristics  
Maximum Channel Dissipation Curve  
Maximum Safe Operation Area  
200  
150  
100  
50  
5
2
1
1 ms  
0.5  
0.2  
0.1  
Operation in  
this area is  
0.05  
0.02  
limited by R  
DS(on)  
Ta = 25°C  
1 shot  
0.01  
0.05  
0
50  
100  
150  
200  
0.2 0.5  
1
2
5
10 20  
50 100  
Ambient Temperature Ta (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
er Characteristics  
0.20  
0.16  
0.12  
0.08  
0.04  
8  
0.04  
2 V  
10 V  
5 V  
2.5 V  
75°C  
25°C  
Tc = –25°C  
1.8 V  
VGS = 1
VDS = 10 V  
Pulse Test  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
2
Drain to Soultage  
vs. Gate to age  
Static Drain to Source on State  
Resistance vs. Drain Current  
5
0.5  
0.4  
0.3  
0.2  
0.1  
Pulse Test  
Pulse Test  
2
1
VGS = 2.5 V  
4 V  
0.5  
ID = 0.2 A  
0.2  
0.1  
0.1 A  
0.05 A  
6
0
2
4
8
10  
0.01 0.02  
0.05 0.1  
0.2  
0.5  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 3 of 6  
2SK2570  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
2.5  
2.0  
1.5  
1.0  
0.5  
1
0.5  
ID = 0.2 A  
Tc = –25°C  
0.2  
0.05, 0.1A  
0.05, 0.1, 0.2 A  
Pulse Test  
VGS = 2.5 V  
0.1  
25°C  
0.05  
75°C  
0.02  
0.01  
4 V  
VDS = 10 V  
Pulse Test  
0
0.005  
Ð40  
0
40  
80  
120  
160  
0.002 0.005 0.01 0.02 0.05 0.1 0.2  
Drain Current ID (A)  
Case Temperature TC (°C)  
Typical Capacitance vs.  
Drain to Source Voltage  
ing Characteristics  
500  
200  
100  
50  
t
f
Ciss  
t
r
20  
10  
5
Coss  
t
d(on)  
0  
Crss  
10  
5
VGS = 0  
VGS = 5 V, VDD = 10 V  
2
1
f = 1 MHz  
PW = 5 µs, duty < 1 %  
0
4
8
0.05  
0.1  
0.2  
0.5  
Drain to Sou
Drain Current ID (A)  
Rev
Sour
0.20  
0.16  
0.12  
0.08  
0.04  
VGS = 0  
5 V  
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
Source to Drain Voltage VSD (V)  
Rev.2.00 Sep 07, 2005 page 4 of 6  
2SK2570  
Switching Time Test Circuit  
Vin Monitor  
Waveform  
90%  
Vout  
Monitor  
10%  
10%  
D.U.T.  
RL  
Vin  
Vout  
10%  
VDD  
= 10 V  
Vin  
5 V  
50 Ω  
90%  
90%  
t
t
d(on)  
t
f
t
d(off)  
r
Rev.2.00 Sep 07, 2005 page 5 of 6  
2SK2570  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Package Name  
MASS[Typ.]  
0.011g  
MPAK(T) / MPAK(T)V,  
MPAK / MPAKV  
SC-59A  
PLSP0003ZB-A  
D
A
Q
c
e
E
HE  
L
L
P
L
1
Dimension in Millimeters  
Reference  
Symbol  
A
A
A3  
Min  
1.0  
0
Nom  
Max  
1.3  
0.1  
1.2  
b
A
x
S
A
M
e
A1  
A2  
A3  
1.0  
1.1  
0.25  
0.42  
0.4  
b
0.35  
0.1  
0.5  
A
2
1
A
b1  
c
0.13  
0.11  
0.15  
c1  
D
E
e
2.7  
3.1  
1.35  
1.5  
0.95  
2.8  
1.65  
A
S
HE  
2.2  
3.0  
b
L
0.35  
0.15  
0.25  
0.75  
0.55  
0.65  
0.05  
0.55  
L1  
b1  
c1  
I
L
P
x
c
b
e
2
1
1.95  
0.3  
I1  
1.05  
A-A Section  
osition areas  
Q
Ordering Information  
Part Name  
Shipping Container  
2SK2570ZL-TL-E  
2SK2570ZL-TR-E  
3000 p
300
ing  
Taping  
Note: For some grades, p. Please contact the Renesas sales office to check the state of  
production befor
Rev.2.00 Sep 07, 2005 page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technoloorp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belongnesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's ating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and anformation on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notments or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renct distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other los
Please also pay attention to information published by Renesas Technology Corp. by varilogy Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including produalgorithms, please be sure to  
evaluate all information as a total system before making a final decision on the appRenesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the informat
5. Renesas Technology Corp. semiconductors are not designed or manufactured under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an autht distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or scal, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary these materials.  
7. If these products or technologies are subject to the Japanese export d under a license from the Japanese government and  
cannot be imported into a country other than the approved destin
Any diversion or reexport contrary to the export control laws and f destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details ned therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/ennformation.  
Renesas Technology America, I
450 Holger Way, San Jose, CA
Tel: <1> (408) 382-7500, Fax
Renesas Technology Europ
Dukes Meadow, Millboard Roadhire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <
Renesas Technology Hong Kong Lt
7th Floor, North Tower, World Finance Cbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
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