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2SK2315TYTL-E

型号：

2SK2315TYTL-E

描述：

硅N沟道MOS FET[ Silicon N Channel MOS FET ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

6 页

PDF大小：

2101 K

下载PDF手册
2SK2315  
Silicon N Channel MOS FET  
REJ03G1006-0200  
(Previous: ADE-208-1354)  
Rev.2.00  
Sep.07,2005  
Application  
High speed power switching  
Features  
•
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
2.5 V gate drive device can from 3 V source.  
Suitable for DC-DC cove, power switch, solenoid drive  
Outline  
RENESAA  
(Package na
D
1. Gate  
2. Drain  
3. Source  
4. Drain  
G
Note: Marking is “TY”  
Renesas Technology Corp.  
Rev.2.00 Sep. 07, 2005 page 1 of 5  
2SK2315  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
Ratings  
Unit  
60  
V
V
VGSS  
±20  
2
ID  
A
1
Drain peak current  
ID(pulse)  
*
4
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
2
A
Pch*2  
Tch  
1
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)  
Electrical Characteristics  
(Ta = 25°C)  
Item  
ol  
Min  
60  
±20  
Typ  
—
Max  
—
Unit  
V
Test Conditions  
ID = 10 mA, VGS = 0  
IG = ±100 µA, VDS = 0  
VGS = ±16 V, VDS = 0  
VDS = 50 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 0.3 A, VGS = 3 V*3  
ID = 1 A, VGS = 4 V*3  
ID = 1 A, VDS = 10 V*3  
Drain to source breakdo
Gate to source break
Gate to source leak cur
Zero gate voltage drain cu
Gate to source cutoff voltage  
—
—
V
—
±5  
5
µA  
µA  
V
—
—
1.5  
0.6  
0.45  
—
Static drain to source on state  
resistance  
Ω
Ω
Forward transfer admittance  
Input capacitance  
Cis
Coss  
Crss  
ton  
S
pF  
pF  
pF  
s  
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on time  
—
ID = 1 A, RL = 30 Ω,  
VGS = 10 V  
Turn-off time  
toff  
—
Note: 3. Pulse Test  
Rev.2.00 Sep. 07, 2005 page 2 of 5  
2SK2315  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
5
1.6  
1.2  
0.8  
0.4  
100 µs  
2
1
0.5  
0.2  
0.1  
Operation in  
this area is  
limited by R  
DS(on)  
0.05  
0.02  
Ta = 25°C  
1 shot pulse  
0.01  
0.005  
0
0.2 0.5  
1
2
5
10 20  
50 100 200  
50  
100  
150  
200  
Drain to Source Voltage VDS (V)  
Ambient Tere Ta (°C)  
Ts  
Typical Transfer Characteristics  
5
4
3
2
1
5
4
3
4
3.5 V  
Tc = 75°C  
25°C  
–25°C  
2.5 V  
2 V  
VDS = 10 V  
Pulse Test  
VGS = 1.5 V  
0
3
4
5
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
oltage VGS (V)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
e State Resistance  
in Current  
5
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Ta = 25°C  
Ta = °C  
Pulse Test  
2
1
ID = 2 A  
VGS = 3 V  
10 V  
0.5  
0.2  
0.1  
1 A  
0.5 A  
0.05  
0
4
8
12  
16  
20  
0.1 0.2  
0.5  
1
2
5
10  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep. 07, 2005 page 3 of 5  
2SK2315  
Static Drain to Source on State Resistance  
vs. Temperature  
Forward Transfer Admittance vs.  
Drain Current  
10  
5
1.0  
Tc = –25°C  
25°C  
0.8  
0.6  
0.4  
0.2  
ID = 2 A  
75°C  
2
1
VGS = 3 V  
0.5 A  
1 A  
0.5  
1 A  
0.5 A  
ID = 2 A  
VDS = 10 V  
Pulse Test  
VGS = 10 V  
0.2  
0.1  
0
–40  
0
40  
80  
120  
160  
0.1 0.2  
0.5  
1
2
5
10  
Case Temperature Tc (°C)  
Drain Current ID (A)  
Typicavs.  
Dra
Dynamic Input Characteristics  
1000  
100  
100  
80  
60  
40  
20  
VGS  
VDD = 50 V  
25 V  
16  
12  
8
10 V  
VDS  
Crss  
ID = 2 A  
10  
1
4
0
VGS = 0  
f = 1 MHz  
VDD = 50 V  
25 V  
10 V  
4
6
8
10  
0
10  
20  
30  
40  
50  
Drain to Source Voltage VDS (V)  
arge Qg (nc)  
rent vs.  
Voltage  
Switching Characteristics  
200  
100  
5
4
3
2
1
P
t
d(off)  
50  
t
f
20  
10  
5
10 V  
t
r
5 V  
t
d(on)  
VGS = 0  
VGS = 10 V, PW = 2 µs  
DD = 30 V, duty < 1 %  
V
2
0
0.4  
0.8  
1.2  
1.6  
2.0  
0.05 0.1 0.2  
0.5  
1
2
5
Drain Current ID (A)  
Source to Drain Voltage VSD (V)  
Rev.2.00 Sep. 07, 2005 page 4 of 5  
2SK2315  
Package Dimensions  
JEITA Package Code  
SC-62  
RENESAS Code  
Package Name  
UPAK / UPAKV  
MASS[Typ.]  
0.050g  
Unit: mm  
PLZZ0004CA-A  
Ordering Information  
Part Name  
Quantity  
ping Container  
2SK2315TYTL-E  
2SK2315TYTR-E  
1000 pcs  
1000 pcs  
Note: For some grades, production may be terminated. Pleasice to check the state of  
production before ordering the product.  
Rev.2.00 Sep. 07, 2005 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or ) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a refour customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any ntellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assuany damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algn examples contained in these materials.  
3. All information contained in tdata, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materinesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended ogy Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purc
The information describtypographical errors.  
Renesas Technology Coriability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to y Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesa
4. When using any or all of the infog product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total spplicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, lian contained herein.  
5. Renesas Technology Corp. semicondue in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Rnesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific pnsportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technolin whole or in part these materials.  
7. If these products or technologies are subject to tust be exported under a license from the Japanese government and  
cannot be imported into a country other than the a
Any diversion or reexport contrary to the export contruntry of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further tained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detai
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowlo
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
厂商 型号 描述 页数 下载

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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