SMD Type
Diodes
Silicon Epitaxial Planar Diode
1SV245
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
+0.1
2.6
-0.1
High Capacitance Ratio:C2V/C25V = 5.7(Typ.)
Low Series Resistance:rs = 1.2 (Typ.)
1.0max
0.475
0.375
Excellent C-V Characteristics,and Small Tracking Error.
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Value
30
Unit
V
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
VRM
Tj
V
35(RL = 10 K
125
)
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Conditions
Min
30
Typ
Max
Unit
V
IR = 1
A
Reverse Current
Capacitance
IR
VR = 28 V
10
4.55
0.77
6.5
nA
C2V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
3.31
0.61
5
pF
C25V
C2V/C25V
rs
Capacitance Ratio
Series Resistance
Note :
5.7
1.2
VR = 1V, f = 470 MHz
2.0
Unites are compounded in one package and are mathed to 6.0%
C(Max.)-C(Min.)
0.06
C(Min.)
(VR=2~25V)
Marking
Marking
T3
1
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