SMD Type
TransistIoCrs
2SK3637
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID = 1 mA, VGS = 0
Min
200
Typ
Max
Unit
V
Gate-drain surrender voltage
Diode forward voltage
VDSS
VDSF
Vth
IDR = 50 A, VGS = 0
-1.5
4
V
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Turn-on delay time
VDS = 25 V, ID = 10 mA
VDS = 160 V, VGS = 0
VGS = 30 V, VDS = 0
2
V
IDSS
IGSS
100
1
ìA
ìA
mÙ
S
RDS(on) VGS = 10 V, ID = 25 A
29
30
40
VDS = 25 V, ID = 25 A
15
Yfs
Ciss
Coss
Crss
td(on)
tr
4 550
750
75
pF
pF
pF
ns
ns
ns
ns
ns
nC
nC
nC
nC
/W
/W
VDS = 25 V, VGS = 0, f = 1 MHz
50
Rise time
125
390
140
210
820
85
VDD = 100 V, ID = 25 A,RL = 4 Ù, VGS =
10 V
Turn-off delay time
td(off)
tf
Fall time
Reverse recovery time
Reverse recovery charge
Total gate charge
trr
L = 230 ìH, VDD = 100 V
Qrr
IDR = 25 A, di /dt = 100 A/ ìs
Qg
VDD = 100 V, ID = 25 A,VGS = 10 V
Gate-source charge
Qgs
Qgd
Rth(ch-c)
Rth(ch-a)
30
Gate-drain charge
12
Channel-case heat resistance
Channel-atmosphere heat resistance
1.25
41.6
2
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