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2SK3636

型号：

2SK3636

描述：

硅N沟道功率MOSFET[ Silicon N-channel Power MOSFET ]

品牌：

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数：

2 页

PDF大小：

42 K

下载PDF手册

SMD Type

TransistIoCrs

Silicon N-channel Power MOSFET

2SK3636

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Avalanche energy capacity guaranteed: EAS

20 mJ

Gate-source surrender voltage VGSS = 30 V guaranteed

High-speed switching: tf = 50 ns

No secondary breakdown

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Symbol

Rating

Unit

V^DSS

V^GSS

I^D

800

Peak drain current

I^DP

Avalanche energy capability

Power dissipation Ta = 25

Power dissipation

E^AS

Channel temperature

T^ch

150

Storage temperature

Tstg

-55 to +150

www.kexin.com.cn

SMD Type

TransistIoCrs

2SK3636

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

ID = 1 mA, VGS = 0

Min

800

Typ

Max

Unit

Gate-drain surrender voltage

Drain-source cutoff current

Gate-source cutoff currentt

Gate threshold voltage

Forward transfer admittance *

Drain-source on resistance *

Diode forward voltage *

Short-circuit forward transfer capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Turn-on delay time

V^DSS

I^DSS

I^GSS

V^th

VDS = 640 V, VGS = 0

VGS = 30 V, VDS = 0

VDS = 25 V, ID = 1 mA

VDS = 25 V, ID = 2 mA

100

ìA

2.0

1.5

5.0

2.4

3.2

Yfs

R^DS(on)VGS = 10 V, ID = 2 mA

4.0

V^DSF

C^iss

IDR = 3 A, VGS = 0

-1.6

VDS = 10 V, VGS = 0, f = 1 MHz

730

C^oss

C^rss

t^d(on)

t^r

Rise time

V^DD= 200 V, ID = 2 A, RL = 100 Ù,VGS

= 10 V

Fall time

t^f

Turn-off delay time

t^d(off)

R^th(ch-c)

R^th(ch-a)

160

Thermal resistance (ch-c)

Thermal resistance (ch-a)

* Pulse measurement

3.6

62.5

www.kexin.com.cn

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