SMD Type
MOSFICET
Silicon N-Channel MOSFET
2SK2715
Features
TO-252
Unit: mm
Low on-resistance.
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Fast switching speed.
Wide SOA (safe operating area).
Easily designed drive circuits.
Easy to parallel.
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
500
Gate to source voltage
V
30
2
A
Drain current
Idp *
PD
6
20
A
Power dissipation
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
ID=1mA,VGS=0V
Min
500
Typ
Max
Unit
V
VDSS
IDSS
IGSS
VDS=500V,VGS=0
VGS= 30V,VDS=0
100
100
4.0
A
nA
V
VGS(th) VDS=10V,ID=1mA
VDS=10V,ID=1A
2.0
0.6
1.5
3.0
280
58
S
Yfs
RDS(on) VGS=10V,ID=1A
Ciss
4.0
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Coss
Crss
ton
tr
Reverse transfer capacitance
Turn-on delay time
23
10
Rise time
12
ID=1A,VGS(on)=10V,RG=10 ,RL=150
,VDD=150V
Turn-off delay time
toff
tf
30
Fall time
63
1
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