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2SK3832_04

型号:

2SK3832_04

描述:

N沟道MOSFET硅通用开关设备的应用[ N-Channel Silicon MOSFET General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

44 K

Ordering number : ENN8015  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3832  
Features  
• Low ON-resistance.  
Ultrahigh-speed switching.  
4V drive.  
Motor drive, DC / DC Converter.  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
100  
±20  
30  
DSS  
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
120  
2.5  
65  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
56  
30  
AS  
I
AV  
*1. V =20V, L=100µH, I =30A  
DD  
AV  
*2. L100µH, 1 Pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
100  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=100V, V =0  
GS  
1
±10  
2.6  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0  
DS  
V (off)  
GS  
=10V, I =1mA  
1.2  
D
Forward Transfer Admittance  
yfs  
=10V, I =15A  
12.5  
21  
S
D
R
(on)1  
I
=15A, V =10V  
GS  
46  
57  
60  
80  
mΩ  
mΩ  
pF  
pF  
pF  
DS  
D
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
=15A, V =4V  
GS  
Input Capacitance  
Ciss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
2150  
160  
110  
DS  
DS  
DS  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Marking : K3832  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D2404QA TS IM TB-00000312  
No.8015-1/4  
2SK3832  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
t (on)  
Conditions  
Unit  
min  
max  
Turn-ON Delay Time  
Rise Time  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
20  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
d
t
r
36  
180  
60  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qg  
Qgs  
Qgd  
V
V
V
=50V, V =10V, I =30A  
GS  
42  
DS  
DS  
DS  
D
=50V, V =10V, I =30A  
GS  
7.2  
9.2  
1.0  
D
=50V, V =10V, I =30A  
GS  
D
V
SD  
I =30A, V =0  
S GS  
1.2  
Package Dimensions  
unit : mm  
Switching Time Test Circuit  
2056A  
V
=50V  
DD  
V
IN  
10V  
0V  
15.6  
14.0  
3.2  
4.8  
2.0  
I
=15A  
D
V
IN  
R =3.3Ω  
L
D
V
OUT  
PW=10µs  
D.C.1%  
G
1.6  
1.0  
2.0  
0.6  
2SK3832  
P.G  
50Ω  
S
1 : Gate  
3
2
1
2 : Drain  
3 : Source  
0.6  
5.45  
5.45  
SANYO : TO-3PB  
Unclamped Inductive Circuit  
L
50Ω  
RG  
DUT  
15V  
0V  
V
50Ω  
DD  
I
-- V  
I
-- V  
GS  
D
DS  
D
60  
50  
40  
30  
20  
60  
50  
40  
30  
20  
V
DS  
=10V  
Tc=25°C  
4.0V  
10  
0
10  
0
V
=3.0V  
GS  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
IT07709  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
IT07710  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V -- V  
GS  
No.8015-2/4  
2SK3832  
R
DS  
(on) -- V  
R
DS  
(on) -- Tc  
GS  
120  
110  
100  
90  
130  
120  
110  
100  
90  
I =15A  
D
80  
80  
70  
70  
60  
60  
50  
50  
40  
40  
30  
30  
20  
20  
10  
0
10  
0
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc --  
°
C
IT07711  
IT07712  
GS  
yfs -- I  
D
I
-- V  
SD  
F
100  
100  
7
5
V
=10V  
V
=0V  
DS  
GS  
7
3
2
5
10  
7
3
2
5
3
2
1.0  
7
10  
5
7
5
3
2
0.1  
7
3
2
5
3
2
0
0.1  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
0
0.3  
0.6  
0.9  
1.2  
1.5  
IT07714  
1.0  
10  
100  
IT07713  
Drain Current, I -- A  
Diode Forward Voltage, V  
-- V  
SD  
D
Ciss, Coss, Crss -- V  
V
-- Qg  
DS  
GS  
7
5
3
10  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
f=1MHz  
Ciss  
V
=50V  
DS  
I =30A  
D
2
1000  
7
5
3
2
100  
1.0  
0
7
5
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
Drain-to-Source Voltage, V  
-- V  
IT07715  
Total Gate Charge, Qg -- nC  
IT07716  
DS  
SW Time -- I  
A S O  
D
3
2
1000  
V
V
=50V  
=10V  
DD  
GS  
I
=120A  
7
5
<10µs  
DP  
100  
7
5
3
2
I =30A  
D
3
2
10  
7
100  
5
7
5
3
2
Operation in  
this area is  
3
2
1.0  
7
5
limited by R (on).  
DS  
t (on)  
d
3
2
Tc=25°C  
Single pulse  
10  
7
0.1  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0  
10  
100  
0.1  
1.0  
10  
100  
IT07717  
Drain Current, I -- A  
Drain-to-Source Voltage, V  
-- V  
IT07718  
D
DS  
No.8015-3/4  
2SK3832  
P
-- Ta  
P
-- Tc  
D
D
3.0  
2.5  
2.0  
1.5  
1.0  
80  
70  
65  
60  
50  
40  
30  
20  
0.5  
0
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
IT07720  
Ambient Temperature, Ta -- °C  
Case Temperature, Tc -- °C  
IT07719  
Note on usage : Since the 2SK3832 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer’s  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer’s products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of December, 2004. Specifications and information herein are subject  
to change without notice.  
PS No.8015-4/4  
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