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2SK3723

型号:

2SK3723

描述:

N沟道增强型MOSFET[ N-channel Enhancement Mode MOSFET ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

2 页

PDF大小:

44 K

SMD Type  
Transistors  
N-channel Enhancement Mode MOSFET  
2SK3723  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Features  
Low on-resistance, low Qg  
High avalanche resistance  
For high-speed switching  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
150  
30  
V
30  
A
Peak drain current  
IDP  
120  
50  
A
Power dissipation  
PD  
W
3
Power dissipation Ta = 25  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
-55 to +150  
1
www.kexin.com.cn  
SMD Type  
Transistors  
2SK3723  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
ID = 1 mA, VGS = 0  
Min  
150  
2
Typ  
Max  
Unit  
V
Drain-source surrender voltage  
Gate threshold voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Drain-source ON resistance  
Forward transfer admittance  
Short-circuit forward transfer capacitance  
Short-circuit output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
VDSS  
Vth  
VDS = 25 V, ID = 1 mA  
VDS = 120 V, VGS = 0  
VGS = 30 V, VDS = 0  
4
100  
1
V
IDSS  
IGSS  
ìA  
ìA  
mÙ  
S
RDS(on) VGS = 10 V, ID = 15 A  
33  
18  
42  
VDS = 25 V, ID = 15 A  
8
Yfs  
Ciss  
Coss  
Crss  
td(on)  
Tr  
2 900  
618  
91  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 25 V, VGS = 0, f = 1 MHz  
32  
Rise time  
46  
VDD  
100 V, ID = 15 A,RL = 6.7 Ù,  
VGS = 10 V  
Turn-off delay time  
td(off)  
tf  
VDSF  
trr  
227  
66  
Fall time  
Diode foward voltage  
IDR = 30 A, VGS = 0  
-1.5  
Reverse recovery time  
Reverse recovery charge  
Gate charge load  
L = 230 ìH, VDD = 100 V  
IDR = 15 A, di/dt = 100 A/ìs  
130  
533  
55.4  
9.1  
ns  
nC  
nC  
nC  
nC  
/W  
/W  
Qrr  
Qg  
VDD = 100 V, ID = 15 A,VGS = 10 V  
Gate-source charge  
Qgs  
Gate-drain charge  
Qgd  
Rth(ch-c)  
Rth(ch-a)  
22.4  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
2.5  
89.2  
Marking  
Marking  
K3723  
2
www.kexin.com.cn  
厂商 型号 描述 页数 下载

PANASONIC

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ETC

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ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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PANASONIC

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ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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