SMD Type
TransistIoCrs
MOS Field Effect Transistors
2SK2481
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Low On-state Resistance:RDS(on)=4 max.(VGS=10V,ID=2.0A)
Low Ciss Ciss=900pF TYP
High Avalanche Capability Ratings
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
Rating
Unit
V
900
Gate to Source Voltage
VGSS
V
30
Drain Current(DC)
ID(DS)
A
4
Drain Current(pulse) *1
ID(pulse)
A
12
1.5
Total Power Dissipation Ta = 25
Total Power Dissipation TC = 25
Channel Temperature
PT
W
70
150
Tch
Tstg
IAS
Storage temperature
-55 to +150
4
Single Avalanche Current *2
Single Avalanche Energy *2
*1. PW 10ìs,Dduty cycle 1%.
*2.Starting Tch=25 ,RG=25Ù,VGS=20V
A
EAS
65.9
mJ
0
1
www.kexin.com.cn
