SMD Type
MOSFET
MOS Field Effect Transistor
2SK3299
TO-263
Unit: mm
+0.2
4.57
-0.2
Features
+0.1
1.27
-0.1
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
Gate voltage rating 30 V
+0.1
-0.1
0.1max
1.27
Low on-state resistance
RDS(on) = 0.75
MAX. (VGS = 10 V, ID = 5.0 A)
+0.1
0.81
-0.1
2.54
Avalanche capability ratings
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
Surface mount package available
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
600
Gate to source voltage
V
30
A
10
Drain current
Idp *
A
40
1.5
Power dissipation
TA=25
TC=25
PD
W
75
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
Testconditons
VDS=600V,VGS=0
Min
Typ
Max
100
100
3.5
Unit
A
IDSS
IGSS
VGS(off)
Yfs
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5.0A
VGS=10V,ID=5.0A
A
2.5
3.2
V
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
S
RDS(on)
Ciss
Coss
Crss
ton
0.68 0.75
1580
280
25
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
27
tr
17
ID=5.0A,VGS(on)=10V,RG=10
,VDD=150V
Turn-off delay time
Fall time
toff
66
tf
24
1
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