SMD Type
MOSFICET
Silicon N-Channel MOSFET
2SK2329S
TO-252
Features
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
Low on-resistance
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source
Suitable for Switching regulator, DC-DC converter
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
Gate to source voltage
V
10
10
40
A
Drain current
Idp *
PD
A
Power dissipation
20
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID=10mA,VGS=0
Min
30
Typ
Max
Unit
V
Drain to source breakdown voltage
Gate to source voltage
VDSS
VGSS
IDSS
V
IG= 200 A,VGS=0
VDS=25V,VGS=0
10
Drain cut-off current
100
10
A
Gate leakage current
IGSS
VGS= 6.5V,VDS=0
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=10V,ID=1mA
0.4
10
1.4
V
VDS=10V,ID=5A
VGS=4V,ID=5A
VGS=2.5V,ID=5A
18
S
Yfs
0.03 0.04
0.04 0.06
1250
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
540
120
20
145
ID=5A,VGS(on)=4V,RL=2
Turn-off delay time
Fall time
toff
tf
225
125
1
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