SMD Type
MOSFET
MOS Field Effect Transistor
2SK3668
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
Gate voltage rating: 30 V
+0.1
-0.1
0.1max
1.27
Low on-state resistance
RDS(on) = 0.55
MAX. (VGS = 10 V, ID = 5.0 A)
+0.1
0.81
-0.1
Surface mount package available
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
400
Unit
V
Gate to source voltage
V
30
A
10
Drain current
Idp *
A
34
1.5
Power dissipation
TA=25
TC=25
PD
W
100
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=400V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5.0A
VGS=10V,ID=5.0A
nA
V
100
3.5
2.5
3.0
5.6
0.4
1320
230
13
S
RDS(on)1
Ciss
Coss
Crss
ton
0.55
pF
pF
pF
ns
ns
ns
ns
nC
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
VDS=10V,VGS=0,f=1MHZ
18
tr
8
ID=5.0A,VGS(on)=10V,RG=10
,VDD=150V
Turn-off delay time
Fall time
toff
44
tf
4
Total Gate Charge
QG
26
VDD = 320V
VGS = 10 V
ID =10A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
7
nC
nC
V
11
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
IF = 10 A, VGS = 0 V
di/dt = 100 A/ ìs
0.9
350
2.7
ns
ìC
Qrr
1
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