SMD Type
MOSFET
Silicon N-Channel MOSFET
2SK2211
SOT-89
Unit: mm
+0.1
-0.1
+0.1
1.50
-0.1
4.50
1.80
+0.1
-0.1
Features
Low ON-resistance RDS(ON)
High-speed switching
3
0.53
2
1
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
1 Gate
1. Source
1. Base
+0.1
-0.1
3.00
2 Drain
2. Drain
2. Collector
3 Source
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
Gate to source voltage
V
20
A
1.0
Drain current
Idp *
PD
A
2.0
1
Power dissipation
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID=0.1mA,VGS=0
Min
30
Typ
Max
Unit
V
Drain to source breakdown voltage
Gate to source voltage
Drain cut-off current
VDSS
VGSS
IDSS
IGSS
Vth
IGS=0.1mA,VGS=0
VDS=25V,VGS=0
VGS= 15V,VDS=0
VDS=5V,ID=1mA
VDS=10V,ID=0.5A
VGS=4V,ID=0.5A
VGS=10V,ID=0.5A
V
20
1.0
10
2
A
Gate leakage current
A
Gate threshold voltage
Forward transfer admittance
0.8
0.5
V
S
Yfs
0.48 0.75
Drain to source on-state resistance
RDS(on)
0.35
87
0.6
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
pF
pF
pF
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
69
23
12
tr
ID=0.5A,VGS(on)=10V,RL=10 ,VDD=10V
160
60
Turn-off delay time
toff
Marking
Marking
2M
1
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