SMD Type
MOSFET
MOS Field Effect Transistor
2SK3424
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
4.5-V drive available
Low on-state resistance
RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A)
Low gate charge
+0.1
-0.1
0.1max
1.27
QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V)
Built-in gate protection diode
+0.1
0.81
-0.1
2.54
Surface mount device available
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
20
Gate to source voltage
V
A
48
Drain current
Idp *
A
192
50
Power dissipation
TC=25
TA=25
PD
W
1.5
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=30V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=24A
VGS=10V,ID=24A
VGS=4.5V,ID=24A
10
A
1.5
13
2.5
V
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
7.7
11.5
m
Drain to source on-state resistance
10.5 17.0
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
1900
580
270
14
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Coss
Crss
ton
tr
13
ID=24A,VGS(on)=10V,RG=10 ,VDD=15V
Turn-off delay time
Fall time
toff
61
tf
22
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
34
ID =48A, VDD =24V, VGS = 10 V
QGS
QGD
6.4
9.1
1
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