SMD Type
MOSFICET
N-Channel Silicon MOSFET
2SK2925S
Features
Low on-resistance
TO-252
Unit: mm
RDS =0.060 typ.
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
High speed switching
4V gate drive device can be driven from 5V source
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
Gate to source voltage
V
20
10
40
A
Drain current
Idp *
PD
A
Power dissipation
20
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
IDSS
Testconditons
ID=10mA,VGS=0
Min
60
Typ
Max
Unit
V
Drain to source breakdown voltage
Drain cut-off current
VDS=60V,VGS=0
VGS= 16V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5A
VGS=10V,ID=5A
VGS=4V,ID=5A
10
10
A
Gate leakage current
IGSS
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
1.5
5
2.5
V
8
S
Yfs
0.060 0.080
Drain to source on-state resistance
RDS(on)
0.095 0.160
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
350
190
70
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
10
55
ID=5A,VGS(on)=10V,RL=6
Turn-off delay time
Fall time
toff
tf
60
70
1
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