SMD Type
MOSFICET
Silicon N-Channel MOSFET
2SK2735S
Features
TO-252
Unit: mm
Low on-resistance
+0.15
-0.15
+0.1
2.30
-0.1
6.50
RDS = 20 m typ.
+0.2
5.30
-0.2
+0.8
0.50
-0.7
High speed switching
4V gate drive device can be driven from 5V source
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
Gate to source voltage
V
20
20
80
A
Drain current
Idp *
PD
A
Power dissipation
20
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
Testconditons
ID=10mA,VGS=0V
Min
30
Typ
Max
Unit
V
Drain source breakdown voltage
Drain cut-off current
IDSS
VDS=30V,VGS=0
10
10
A
Gate leakage current
IGSS
VGS= 16V,VDS=0
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=10V,ID=1mA
1.0
8
2.0
V
VDS=10V,ID=10A
VGS=10V,ID=10A
VGS=4V,ID=10A
16
20
S
Yfs
28
50
m
Drain to source on-state resistance
RDS(on)
35
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
750
520
210
16
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
225
85
ID=10A,VGS(on)=10V,RL=1
Turn-off delay time
Fall time
toff
tf
90
1
www.kexin.com.cn
