SMD Type
MOSFET
MOS Field Effect Transistor
2SK3467
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
4.5 V drive available
Low on-state resistance
RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A)
Low gate charge
+0.1
-0.1
0.1max
1.27
QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
Surface mount device available
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
20
Gate to source voltage
V
20
80
A
Drain current
Idp *
A
320
76
Power dissipation
TC=25
TA=25
PD
W
1.5
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=20V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=40A
VGS=10V,ID=40A
VGS=4.5V,ID=40A
10
A
1.5
20
2.5
V
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
4.8
6.7
2800
1200
600
16
6.0
9.5
m
Drain to source on-state resistance
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Coss
Crss
ton
tr
23
ID=40A,VGS(on)=10V,RG=10 ,VDD=10V
Turn-off delay time
Fall time
toff
74
tf
31
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
55
ID =80A, VDD =16V, VGS = 10 V
QGS
QGD
9
17
1
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