SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3712
TO-252
Unit: mm
Features
+0.15
6.50
-0.15
+0.1
2.30
-0.1
+0.2
5.30
-0.2
+0.8
0.50
-0.7
High voltage: VDSS = 250 V
Gate voltage rating: 30 V
Low on-state resistance
0.127
max
RDS(on) = 0.58
MAX. (VGS = 10 V, ID = 4.5 A)
+0.1
0.80
-0.1
Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
Built-in gate protection diode
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
250
Gate to source voltage
V
30
A
9.0
27
Drain current
Idp *
A
1.0
Power dissipation
TA=25
TC=25
PD
W
40
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
Drain cut-off current
VDS=250V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=4.5A
VGS=10V,ID=4.5A
Gate leakage current
IGSS
10
A
Gate cut off voltage
VGS(off)
2.5
3
3.5
6
4.5
V
Forward transfer admittance
Drain to source on-state resistance
S
Yfs
RDS(on)
0.4
0.58
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
450
100
40
8
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
8
ID=4.5A,VGS(on)=10V,RG=0 ,VDD=125V
Turn-off delay time
Fall time
toff
21
6
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
14
3
VDD = 200V
VGS = 10 V
ID =9.0A
7
1
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