SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3224
Features
TO-252
Unit: mm
Low On-State Resistance
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A)
Low Ciss : Ciss = 790 pF TYP.
Built-in Gate Protection Diode
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VDSS
Rating
Unit
V
Drain to source voltage
60
20
VGSS(AC)
VGSS(DC)
ID
V
Gate to source voltage
Drain current
+20,-10
20
V
A
Idp *
A
70
25
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off)
Testconditons
VDS=60V,VGS=0
Min
Typ
Max
10
Unit
A
Drain cut-off current
Gate leakage current
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
VGS=4V,ID=10A
10
A
Gate to source cut off voltage
Forward transfer admittance
1..0
8.0
1.5
15
2.0
V
S
Yfs
24
40
60
m
Drain to source on-state resistance
RDS(on)
33
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
790
240
100
19
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
165
62
ID=10A,VGS(on)=10V,RG=10 ,VDD=30V
Turn-off delay time
Fall time
toff
tf
71
1
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