SMD Type
MOSFICET
MOS Field Effect Transistor
2SK2111
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
Features
+0.1
1.80
-0.1
Low on-resistance
RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A
High switching speed
3
0.53
2
1
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
1 Gate
1. Source
1. Base
+0.1
3.00
-0.1
2 Drain
2. Drain
2. Collector
3 Source
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
20
Gate to source voltage
V
A
1.0
Drain current
Idp
A
2.0
Power dissipation
*
PD
2.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* 16 cm2X0.7mm,ceramic substrate used
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
IGSS
VGS(th) VDS=10V,ID=1mA
Testconditons
Min
Typ
Max
1.0
10
Unit
A
VDS=60V,VGS=0
Gate leakage current
Gate threshold voltage
Forward transfer admittance
VGS= 20V,VDS=0
A
0.8
0.4
1.4
2.0
V
VDS=10V,ID=0.5A
VGS=4.0V,ID=0.5A
VGS=10V,ID=0.5A
S
Yfs
0.32
0.6
Drain to source on-state resistance
RDS(on)
0.24 0.45
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
170
87
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
32
2.8
2.3
55
ID=0.5A,VGS(on)=10V,RL=50 ,RG=10
,VDD=25V
Turn-off delay time
Fall time
td(off)
tf
27
Marking
Marking
NU
1
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